公开(公告)号：US20200312658A1

公开(公告)日：2020-10-01

申请号：US16371502

申请日：2019-04-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto MIURA ,  Yohei ISHII ,  Satoshi SAKAI ,  Kenji MAEDA

IPC: H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/033 ,  H01L29/10

Abstract: A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

公开(公告)号：US20180076051A1

公开(公告)日：2018-03-15

申请号：US15698823

申请日：2017-09-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Satoshi SAKAI ,  Masaru IZAWA ,  Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Yutaka KOUZUMA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32136 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20170018405A1

公开(公告)日：2017-01-19

申请号：US15210257

申请日：2016-07-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/321 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

Abstract translation: 等离子体处理装置包括：处理室，其在具有由透明或半透明的电介质材料制成的侧壁的真空容器中被减压，处理室中的用于安装晶片的台，设置在侧壁的外侧的线圈， 提供用于在处理室中的级上形成等离子体的射频电力，设置在真空容器外部的线圈上方的灯，其将光辐射到晶片上;以及反射器，设置线圈并反射光以照射处理的内部 房间。