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    Method and apparatus for an electron beam exposure system
    1.
    发明授权
    Method and apparatus for an electron beam exposure system 失效
    电子束曝光系统的方法和装置

    公开(公告)号：US4586141A

    公开(公告)日：1986-04-29

    申请号：US536322

    申请日：1983-09-27

    申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

    发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Junichi Kai ,  Koichi Kobayashi

    IPC分类号： H01J37/305 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  G06F15/62

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/31764 ,  H01J2237/31776

    摘要： An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.

    摘要翻译： 一种电子束曝光系统和方法，其根据每种图案所需的精度将光束尺寸从图案变化到图案。 为了提高曝光机的吞吐量，将光束尺寸调整到每个图案可用的最大尺寸。 该图案被分成等于由图案尺寸或图案所需精度确定的最大光束尺寸的矩形。 如果小于矩形的图案的剩余部分保留，则矩形被调整为小于最大光束尺寸，因此图案的整个区域可以被划分成相等尺寸的矩形。 光束的间距和尺寸被调整到这个新的光束尺寸，并且根据新的尺寸矩形重复曝光。 为了提高处理速度，将检查在一个处理中暴露的所有图案的尺寸和所需的精度，并且预先计算诸如光束尺寸，间距和曝光次数的图案生成所需的数据并存储在 光束控制器的存储器。

    Electron beam exposure apparatus
    2.
    发明授权
    Electron beam exposure apparatus 失效
    电子束曝光装置

    公开(公告)号：US4585943A

    公开(公告)日：1986-04-29

    申请号：US502571

    申请日：1983-06-09

    申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa

    发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa

    IPC分类号： H01L21/027 ,  H01J37/304 ,  H01J37/317 ,  H01L21/30 ,  H01J37/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/0209 ,  H01J2237/15 ,  H01J2237/3045 ,  H01J2237/30455

    摘要： An electron beam exposure apparatus having a control apparatus wherein the positioning error caused by transient response characteristics of an electron beam deflection device is detected by using a knife-edge type gauge and a reflecting electron detector. A compensation signal to compensate for the positioning error is produced in a compensation device, and the compensation signal is applied to the electron beam deflection device, whereby the deviation of the position of the electron beam, from the normal position, caused by the transient response characteristics, is reduced.

    摘要翻译： 一种具有控制装置的电子束曝光装置，其中通过使用刀刃式量规和反射电子检测器来检测由电子束偏转装置的瞬态响应特性引起的定位误差。 在补偿装置中产生用于补偿定位误差的补偿信号，并且补偿信号被施加到电子束偏转装置，由此由瞬态响应引起的电子束与正常位置的位置的偏离 特点，减少。

    Scanning electron beam exposure system
    3.
    发明授权
    Scanning electron beam exposure system 失效
    扫描电子束曝光系统

    公开(公告)号：US4968893A

    公开(公告)日：1990-11-06

    申请号：US339887

    申请日：1989-04-18

    申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Takayuki Miyazaki

    发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa ,  Takayuki Miyazaki

    IPC分类号： H01J37/305 ,  H01J37/30 ,  H01J37/302 ,  H01L21/027

    CPC分类号： H01J37/302 ,  H01J37/3007 ,  H01J37/3023

    摘要： A scanning electron beam exposure system includes two apertures (39a, 48a) for forming a rectangular beam (31). The cross section of the rectangular beam is changed by a deflection unit (47X, 47Y) arranged between the two apertures. The rectangular beam is refocused by a refocusing coil (51) to improve the peripheral sharpness of a projected image of the beam. The refocusing coil is controlled in accordance with the cross section (X.sub.1, Y.sub.1) of the beam.

    摘要翻译： 扫描电子束曝光系统包括用于形成矩形光束（31）的两个孔（39a，48a）。 矩形梁的横截面由布置在两个孔之间的偏转单元（47X，47Y）改变。 矩形光束被重新聚焦线圈（51）重新聚焦，以改善光束的投影图像的周边清晰度。 根据梁的横截面（X1，Y1）控制重新聚焦线圈。

    Deflection system in an electron beam exposure device
    4.
    发明授权
    Deflection system in an electron beam exposure device 失效
    电子束曝光装置中的偏转系统

    公开(公告)号：US4583077A

    公开(公告)日：1986-04-15

    申请号：US536467

    申请日：1983-09-27

    申请人： Hiroshi Yasuda ,  Haruo Tsuchikawa

    发明人： Hiroshi Yasuda ,  Haruo Tsuchikawa

    IPC分类号： H01J37/305 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H03M1/00 ,  H03K13/05

    CPC分类号： H01L21/30 ,  H03M1/74

    摘要： In a D/A converter in a deflection system of an electron beam exposure device, the most significant bits (m bits) of input digital data consisting of n bits are input into a decoder circuit, and 2.sup.m D/A converters which correspond to the m bits are provided. The data consisting of the least significant bits (n-m bits) is input into the 2.sup.m D/A converters via 2.sup.m gates, respectively. The decoder circuit is constructed so as to control the 2.sup.m gates so that when the content of the data of the m bits is S, the first to S-th data of the 2.sup.m D/A converters is all rendered to be "1", the data of the (S+1)-th D/A converter remains the same as the data of the n-m bits, and the data of the (S+2)-th and subsequent D/A converters is all rendered to be "0", the sum of the outputs of the 2.sup.m D/A converters being applied to a coil which deflects the electron beam.

    摘要翻译： 在电子束曝光装置的偏转系统中的D / A转换器中，由n位组成的输入数字数据的最高有效位（m位）被输入到解码器电路中，对应于2m的D / A转换器 提供m位。 由最低有效位（n-m位）组成的数据分别通过2m个门输入到2m D / A转换器。 解码器电路被构造成控制2m个门，使得当m位的数据的内容为S时，2m D / A转换器的第一至第S数据全部变为“1” 第（S + 1）个D / A转换器的数据与nm位的数据保持相同，并且第（S + 2）和随后的D / A转换器的数据全部变为“ 0“，2m D / A转换器的输出之和被施加到偏转电子束的线圈上。

    Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements
    9.
    发明授权
    Method and system for exposing an exposure pattern on an object by a charged particle beam which is shaped into a plurality of beam elements 有权
    用于通过成形为多个光束元件的带电粒子束曝光物体上的曝光图案的方法和系统

    公开(公告)号：US6118129A

    公开(公告)日：2000-09-12

    申请号：US283974

    申请日：1999-04-01

    申请人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

    发明人： Yoshihisa Oae ,  Tomohiko Abe ,  Soichiro Arai ,  Shigeru Maruyama ,  Hiroshi Yasuda ,  Kenichi Miyazawa ,  Junichi Kai ,  Takamasa Satoh ,  Keiichi Betsui ,  Hideki Nasuno

    IPC分类号： H01J37/147 ,  H01J37/30 ,  H01J37/302 ,  H01J37/304 ,  H01J37/317

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/30416 ,  H01J2237/31762 ,  H01L2223/54466

    摘要： A method for exposing an exposure pattern on an object by a charged particle beam, including the steps of: shaping a charged particle beam into a plurality of charged particle beam elements in response to first bitmap data indicative of an exposure pattern, such that the plurality of charged particle beam elements are selectively turned off in response to the first bitmap data; focusing the charged particle beam elements upon a surface of an object; and scanning the surface of the object by the charged particle beam elements; the step of shaping including the steps of: expanding pattern data of said exposure pattern into second bitmap data having a resolution of n times (n.gtoreq.2) as large as, and m times (m.gtoreq.1) as large as, a corresponding resolution of the first bitmap data, respectively in X- and Y-directions; dividing the second bitmap data into cells each having a size of 2n bits in the X-direction and 2m bits in said Y-direction; and creating the first bitmap data from the second bitmap data by selecting four data bits from each of the cells, such that a selection of the data bits is made in each of the cells with a regularity in the X- and Y-directions and such that the number of rows in the X-direction and the number of columns in the Y-direction are both equal to 3 or more.

    摘要翻译： 一种用于通过带电粒子束曝光在物体上的曝光图案的方法，包括以下步骤：响应于指示曝光图案的第一位图数据，将带电粒子束成形为多个带电粒子束元件，使得多个 响应于第一位图数据选择性地关闭带电粒子束元件; 将带电粒子束元件聚焦在物体的表面上; 并通过带电粒子束元件扫描物体的表面; 整形步骤包括以下步骤：将所述曝光图案的图案数据扩展为分辨率为n倍（n> / = 2）分辨率的第二位图数据，并且m倍（m> / = 1） ，分别在X和Y方向上分别对应的第一位图数据的分辨率; 将第二位图数据分割成在X方向上具有2n位大小和在所述Y方向上具有2m位的单元， 以及通过从每个单元中选择四个数据位来从第二位图数据创建第一位图数据，使得在每个单元格中以X方向和Y方向上的规则性进行数据位的选择， X方向上的行数和Y方向上的列数都等于3或更大。