公开(公告)号：US08735821B2

公开(公告)日：2014-05-27

申请号：US13428746

申请日：2012-03-23

申请人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

发明人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

IPC分类号： G01J5/20 ,  H01L27/146 ,  G01J5/14

CPC分类号： G01J5/14 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/22 ,  H01L27/14649 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.

摘要翻译： 一种红外成像装置，包括：以矩阵形式布置在安装在包装中的基板上的连接布线部分; 第一红外线检测部和第二红外线检测部，被配置为将吸收的红外辐射的强度转换为相应的第一和第二信号，第二红外线检测部的导热性比第一红外线检测部小。 以及盖构件，其附接到所述封装件以限定与所述基板的气密间隙，所述连接布线部分，所述第一和第二红外检测部分容纳在所述间隙内; 其中在所述间隙内测量真空度，并且基于所测量的真空度发出警告。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20130242161A1

公开(公告)日：2013-09-19

申请号：US13714960

申请日：2012-12-14

申请人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

发明人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/2171

摘要： A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，其包括多个像素块，每个像素块包含多个像素; 第一光学系统，其在成像平面上形成物体的图像; 以及包括微透镜阵列的第二光学系统，所述微透镜阵列包括透光衬底，形成在所述透光衬底上的多个第一微透镜以及围绕所述第一微透镜形成的多个第二微透镜，所述第一微透镜的焦距 基本上等于第二微透镜的焦距，与透光基板接触的第一微透镜的面积大于与透光基板接触的第二微透镜的面积，第二光学系统被配置为减小 并且通过微透镜阵列重建在像素块上的成像平面上形成的图像。

公开(公告)号：US08212214B2

公开(公告)日：2012-07-03

申请号：US13052903

申请日：2011-03-21

申请人： Hiroto Honda ,  Hideyuki Funaki

发明人： Hiroto Honda ,  Hideyuki Funaki

IPC分类号： G01J5/00 ,  G01J5/20

CPC分类号： G01V8/10 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/144 ,  H01L31/101 ,  H04N5/33

摘要： It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

摘要翻译： 可以快速，容易地确定对象的位置。 根据实施例的固态成像元件包括：形成在半导体衬底上的至少两个红外检测器; 配置为串联连接所述至少两个红外检测器的电互连; 以及比较器单元，被配置为将连接红外线检测器的电气互连串联的中间电压与预定的参考电压进行比较。

公开(公告)号：US20120007205A1

公开(公告)日：2012-01-12

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

公开(公告)号：US07737400B2

公开(公告)日：2010-06-15

申请号：US12206234

申请日：2008-09-08

申请人： Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

发明人： Hideyuki Funaki ,  Yoshinori Iida ,  Hiroto Honda

IPC分类号： G01J5/20

CPC分类号： H04N5/33 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0048 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/3651

摘要： A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources.

摘要翻译： 测辐射计型非冷却红外线传感器包括：具有以矩阵形式布置在半导体衬底上的检测像素的摄像区域，以检测入射的红外线; 设置在图像拾取区域中的多个行选择线; 能够使恒定电流流过各行选择线的电流源; 设置在所述摄像区域中的多条信号线; 电压读出电路，分别对应于信号线，以读出分别对应的信号线上产生的信号电压; 分别设置在各信号线和对应的电压读出电路之间的耦合电容; 以及计算器，其计算由电压读出电路读出的两个信号电压之间的差值，对应于从电流源提供的两个不同电流值的相同检测像素的输出。

公开(公告)号：US08581199B2

公开(公告)日：2013-11-12

申请号：US13247025

申请日：2011-09-28

申请人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

发明人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

IPC分类号： G01T1/24

CPC分类号： G01J5/22 ,  G01J5/20 ,  H04N5/33

摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。

公开(公告)号：US08338902B2

公开(公告)日：2012-12-25

申请号：US13050512

申请日：2011-03-17

申请人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

发明人： Honam Kwon ,  Hideyuki Funaki ,  Hiroto Honda ,  Hitoshi Yagi ,  Ikuo Fujiwara ,  Masaki Atsuta ,  Kazuhiro Suzuki ,  Keita Sasaki ,  Koichi Ishii

IPC分类号： H01L31/024

CPC分类号： H01L27/14649 ,  G01J5/007 ,  G01J5/20 ,  G01J2005/068

摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

公开(公告)号：US20120228506A1

公开(公告)日：2012-09-13

申请号：US13247025

申请日：2011-09-28

申请人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

发明人： Hiroto Honda ,  Hideyuki Funaki ,  Honam Kwon

IPC分类号： H01L27/146

CPC分类号： G01J5/22 ,  G01J5/20 ,  H04N5/33

摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.

摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。

公开(公告)号：US07999990B2

公开(公告)日：2011-08-16

申请号：US12408302

申请日：2009-03-20

申请人： Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

IPC分类号： G02F1/00 ,  G02F1/03 ,  G02B5/04

CPC分类号： G02B26/0808

摘要： An optical element includes a plurality of first beam bodies arranged in a first direction on a first plane and being parallel to each other, and second beam bodies placed between adjacent ones of the first beam bodies and provided parallel to the first beam bodies. The first beam body has side surfaces which face the second beam bodies adjacent thereto and are sloped so that the width in the first direction gradually decreases to the upward direction perpendicular to the first plane, the second beam body has side surfaces which face the first beam bodies adjacent thereto and are sloped so that the width in the first direction gradually increases to the upward direction perpendicular to the first plane, and as viewed in the first direction, the spacing between the first beam body and the second beam body is variable.

摘要翻译： 光学元件包括在第一平面上沿第一方向布置并彼此平行的多个第一光束体，以及放置在相邻的第一光束体之间并平行于第一光束体设置的第二光束体。 第一梁主体具有面向与其相邻的第二梁主体并且倾斜的侧表面，使得第一方向上的宽度向垂直于第一平面的向上方向逐渐减小，第二梁主体具有面向第一梁的侧表面 与其相邻并且倾斜，使得第一方向上的宽度逐渐增加到垂直于第一平面的向上方向，并且从第一方向看，第一梁体和第二梁体之间的间隔是可变的。