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    Chemical sputtering purification process
    2.
    发明授权
    Chemical sputtering purification process 失效
    化学溅射纯化工艺

    公开(公告)号：US3892650A

    公开(公告)日：1975-07-01

    申请号：US31940972

    申请日：1972-12-29

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  MOLZEN JR WALTER W

    IPC: C23C14/34 ,  C23C14/56 ,  C23C15/00

    CPC classification number: C23C14/345 ,  C23C14/34 ,  C23C14/564 ,  Y10S148/006 ,  Y10S148/06 ,  Y10S148/158

    Abstract: A process for purifying the diffuse sputtering region of a sputtering system by providing therein a readily disproportionated active vapor species which decomposes therein to form an active getterer of undesirable reactive gases, such as desorbed and source sputtering gases present in the system. In one example, silane mixed with argon decomposes in the diffuse sputtering region to form films of silicon and compounds thereof throughout the sputtering chamber, which silicon acts to chemically getter the reactive gases present. Using an ultra pure vanadium target, films of vanadium are produced having bulk superconducting and resistivity properties.

    Abstract translation: 通过在其中提供易于歧化的活性蒸汽物质来纯化溅射系统的扩散溅射区域的方法，其在其中分解以形成不期望的反应性气体的活性吸附剂，例如系统中存在的解吸和源溅射气体。 在一个实例中，与氩气混合的硅烷在扩散溅射区域分解，以在整个溅射室中形成硅膜及其化合物，硅用于化学吸收存在的反应气体。 使用超纯钒靶，制造具有体超导和电阻率性质的钒膜。

    Method for improving adhesion between conductive layers and dielectrics
    4.
    发明授权
    Method for improving adhesion between conductive layers and dielectrics 失效
    改善导电层与电介质粘结的方法

    公开(公告)号：US3704166A

    公开(公告)日：1972-11-28

    申请号：US3704166D

    申请日：1969-06-30

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  MAYADAS ASHOK F ,  ROSENBERG ROBERT

    IPC: C23C14/24 ,  C04B41/00 ,  H01L21/00 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/29 ,  B44D1/18

    CPC classification number: H01L21/00 ,  C04B41/0027 ,  H01L21/32051 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/158 ,  Y10S148/169 ,  H01L2924/00

    Abstract: A METHOD FOR IMPROVING ADHESION BETWEEN A CONDUCTIVE LAYER AND A SUBSTRATE OF INSULATING MATERIAL IS TAUGHT WHICH INCLUDES THE STEPS OF PROVIDING A SUBSTRATE OF INSULATING MATERIAL SUCH AS SILICON DIOXIDE WHICH CONTAINS A FIRST CATION AND A FIRST ANION. A SECOND CATION SUCH AS ALUMINUM IS INTRODUCED INTO THE SUBSTRATE SUBSTITUTIONALLY BY DIFFUSION OR ION BOMBARDMENT. FINALLY, A LAYER OF CONDUCTIVE MATERIAL IS DEPOSITED ON THE SURFACE OF THE SUBSTRATE BY VACUUM EVAPORATION OF SPUTTERING. THE CONDUCTIVE MATERIAL INCLUDES A THIRD CTION SUCH AS TUNGSTEN WHICH HAS AN AFFINITY FOR THE FIRST ANION. THE INTRODUCTION OF THE SECOND CATION TO CARRIED OUT IN ONLY THE SURFACE LAYERS OF THE SUBSTRATE SUCH THAT DIELECTRIC CHARACTERISTICS OF THE SUBSTRATE ARE SUBSTANTIALLY UNAFFECTED. THE INVENTION BASICALLY TEACHES PROVIDING SITES, IN A INSULATING SUBSTRATE, CONTAINING UNBOUND ATOMS WHICH ARE CAPABLE OF CHEMICALLY BONDING WITH THE DEPOSITED CONDUCTIVE MATERIAL THEREBY OBTAINING IMPROVED ADHESION AT LOW TEMPERATURE (E.G. AT TEMPERATURES OF

    500*C. AND BELOW FOR W OR MO, WHEREAS WITHOUT THE SITES PROVIDED, POOR ADHESION WOULD TAKE PLACE BELOW 500*C.).

    Method for sputtering garnet compound layer
    6.
    发明授权
    Method for sputtering garnet compound layer 失效
    溅射石榴石复合层的方法

    公开(公告)号：US3887451A

    公开(公告)日：1975-06-03

    申请号：US31958972

    申请日：1972-12-29

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  MAYADAS ASHOK F ,  ROSENBERG ROBERT ,  SADAGOPAN VARADACHARI

    IPC: C23C14/35 ,  C23C15/00

    CPC classification number: C23C14/35

    Abstract: A method is disclosed for sputtering epitaxially a layer of stoichiometric garnet composition from a single target wherein the target is composed of a mixture of the separate components of the sputtered layer. Illustratively, both at a substrate temperature of approximately 450*C and at another substrate temperature between 800-850*C, there was obtained formation of a film of gallium substituted yttrium iron garnet (Ga:YIG). A target was made up of the desired stoichiometry with a mixture of the individual oxides pressed to 85% of the compound''s theoretical density. Generally, the steps of the method are: (1) applying a radiofrequency bias to the substrate during sputtering to prevent the deposition of an easily resputtered component of the target; and (2) changing the power density to the target during deposition. Specifically, a target was made up of a mixture of individual oxides Y2O3 + Ga2O3 + Fe2O3 which was pressed to 85% of its theoretical density. Exemplary films of stoichiometric composition were obtained with a radio-frequency bias on the substrate in the range approximately from ground to 100 volts and with power density to the target in the range of approximately 5 to 65 watts/in2. The stoichiometric ratio for the composition was Y3Fe(5 x)GaxO12, where 0

    Abstract translation: 公开了一种用于从单一靶外溅射一层化学计量的石榴石组合物的方法，其中靶由溅射层的分离组分的混合物组成。

    Method of selective chemical vapor deposition
    7.
    发明授权
    Method of selective chemical vapor deposition 失效

    公开(公告)号：US3697343A

    公开(公告)日：1972-10-10

    申请号：US3697343D

    申请日：1970-12-16

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  LAFF ROBERT A

    IPC: C23C16/02 ,  H01L21/00 ,  H01L49/02 ,  H05K3/14 ,  C03C15/00

    CPC classification number: H05K3/146 ,  C23C16/0281 ,  H01L21/00 ,  H01L49/02 ,  Y10S438/913

    Abstract: TUNGSTEN AND OTHER REFRACTORY METALS SUCH AS MOLYBDENUM, TANTALUM, HAFNIUM, ZIRCONIUM, RHENIUM, ETC. AND METLLOIDS SUCH AS SILICONB ARE CAUSED TO BE DEPOSITED SELECTIVELY BY THE HYDROGEN REDUCTION OF THEIR FLUORIDES AND CHLORIDES. THE PROCESS IS TERMED SELECTICE-CHEMICAL VAPOR DEPOSITION SINCE THE METAL IS DEPOSITED ONLY ON PREPATTERNED AREAS OF A SUBSTRATE. THE SUBSTRATE IS SUITABLY A GLASS SUCH AS BOROSILICATE, BROALUMINO-SILICATE, PHOSPHO-ALUMINO-SILICATE, PHOSPHO-SILICATE OR A SODA-LIME GLASS. THE SELECTIVE CHEMICAL VAPOR DEPOSITION PROCESS OCCURS WHEN TWO SURFACES WITH DIFFERENT CHEMICAL REACTIVITIES ARE EXPOSED TO THE CHEMICAL VAPOR DEPOSITION ENVIRONMENT. THE PREPATTERNED AREAS PROVIDED ONE OF THESE SURFACES, SUCH AREAS COMPRISING A NUCLEATING LAYER OF A MATERIAL SUCH AS CHROMIUM, TUNGSTEN, MOLYBDENUM, COPPER,

    ALUMINUM, SILICON, SILICON DIOXIDE, ALUMINUM OXIDE, SILICON NITRILE, AND THE LIKE OR OF COMPOSITE LAYERS OF CHROMIUM-COPPER, CHROMIUM-COPPER-CHROMIUM, AND THE LIKE. THE OTHER SURFACE IS PROVIDED BY THE REMAINDER OF THE SURFACE, I.E. THE EXPOSED SURFACE OF THE SUBSTRATE. THE SURFACE PROVIDED BY THE PREPATTERNED AREA ACTS AS A METAL NUCLEATION SITE WHILE THE SUBSTRATE, I.E., THE GLASS SURFACE CHEMICALLY ERODES (ABLATES) AND THE METAL DOES NOT NUCLEATE THEREON. IN CONSIDERING THE MECHANISM OF THE INVENTURE PROCESS, THE DEPOSITION REACTIONS AND SIMULTANEOUS ABLATION REACTIONS ACTING IN CLOSE PROXIMITY ARE AN ESSENTIAL ELEMENT THEREOF.

    Method of selective chemical vapor deposition
    8.
    发明授权
    Method of selective chemical vapor deposition 失效
    选择性化学气相沉积的方法

    公开(公告)号：US3697342A

    公开(公告)日：1972-10-10

    申请号：US3697342D

    申请日：1970-12-16

    Applicant: IBM

    Inventor： CUOMO JEROME J

    IPC: C23C16/02 ,  H01L21/00 ,  H01L49/02 ,  H05K3/14 ,  B44D1/02 ,  C03C15/00

    CPC classification number: H05K3/146 ,  C23C16/0281 ,  H01L21/00 ,  H01L49/02 ,  Y10S438/913

    Abstract: METALS ARE CAUSED TO BE DEPOSITED SELECTIVELY IN THE HYDROGEN REDUCTION OF THEIR COMPOUNDS WHICH ARE EITHER GASEOUS BEARING OR OF ADEQUATE VAPOR PRESSURE. THE PROCESS IS TERMED SELECTIVE-CHEMICAL VAPOR DEPOSITION SINCE THE METAL IS DEPOSITED ONLY ON PREPATTERNED AREAS OF A SUBSTRATE. THE SUBSTRATE IS SUITABLY A GLASS SUCH AS A BOROSILICATE, BOROALUMINO-SILICATE, PHOSPHOALUMINOSILICATE, PHOSPHOSILICATE OR SODA-LIME GLASS. THE SELECTIVECHEMICAL VAPOR DEPOSTION PROCESS OCCURS WHEN TWO SURFACES WITH DIFFERENT CHEMICAL REACTIVITIES ARE EXPOSED TO THE CHEMICAL VAPOR DEPOSITION ENVIRONMENT. THE PREPATTERNED AREAS PROVIDE ONE OF THESE SURFACES, SUCH AREAS COMPRISING A NUCLEATION LAYER OF A MATERIAL SUCH AS CHROMIUM, TUNGSTEN, MOLYBDENUM, COPPER, ALUMINUM, SILICON, SILICON DIOXIDE, ALUMINUM OXIDE, SILICON NITTRIDE AND THE LIKE, OR A COMPOSITE LAYER OF CHROMIUM-COPPER, CHROMIUM-COPPER CHROMIUM AND THE LIKE. THE OTHER SURFACE IS PROVIDED BY THE REMAINDER OF THE SURFACE OF THE EXPOSED SUBSTRATE. THE SURFACE PROVIDED BY THE PREPATTERNED AREA ACTS AS A METAL MUCLEATION SITE WHILE THE GLASS SURFACE IS CHEMICALLY ERODED (ABLATED) AND THE METAL DOES NOT NUCLEATE THEREON. AN EXAMPLE OF THE PROCESS IS THE CHEMICAL REDUCTION OF COPPER HEXAFLUOROACETYLACETONATE BY HYDROGEN IN THE PRESENCE OF HYDROGEN FLUORIDE OR SULFUR HEXAFLUORIDE IN A REACTION CHAMBER. THE CHAMBER CONTAINS A SUBSTRATE HAVING A PATTERNED NUCLEATING LAYER THEREON ON WHICH THE REDUCED COPPER DEPOSITS WHILE THE SUBSTRATE IS ABLATED BY THE FLUORIDE. THE DEPOSITION REACTIONS AND SIMULTANEOUS ABLATION REACTION, ACTING IN CLOSE PROXIMITY, ARE ESSENTIAL ELEMENTS OF THE INVENTIVES PROCESS.

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