公开(公告)号：US12033972B2

公开(公告)日：2024-07-09

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00015 ,  H01L2224/45139 ,  H01L2924/00015 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45572 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45639 ,  H01L2924/00014 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45669 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2224/45565 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45611 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45618 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45649 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45657 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45666 ,  H01L2224/45655 ,  H01L2924/01029 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2924/01028 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05681 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/01056 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/43848

Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US10461056B2

公开(公告)日：2019-10-29

申请号：US15600857

申请日：2017-05-22

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02 ,  H01L23/495

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

公开(公告)号：US20200013749A1

公开(公告)日：2020-01-09

申请号：US16572626

申请日：2019-09-17

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

公开(公告)号：US09941181B2

公开(公告)日：2018-04-10

申请号：US15599492

申请日：2017-05-19

Applicant: Infineon Technologies AG

Inventor： Heinrich Koerner ,  Michael Bauer ,  Reimund Engl ,  Michael Huettinger ,  Werner Kanert ,  Joachim Mahler ,  Brigitte Ruehle

IPC: H01L23/28 ,  H01L23/29 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/293 ,  H01L21/56 ,  H01L23/295 ,  H01L23/296 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/73265 ,  H01L2924/01029 ,  H01L2924/181 ,  H01L2924/365 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45669

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.

公开(公告)号：US20210082861A1

公开(公告)日：2021-03-18

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02 ,  H01L23/495

Abstract: In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US20190287875A1

公开(公告)日：2019-09-19

申请号：US16431808

申请日：2019-06-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Heinrich Koerner ,  Michael Bauer ,  Reimund ENGL ,  Michael Huettinger ,  Werner Kanert ,  Joachim Mahler ,  Brigitte Ruehle

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/495

Abstract: In various embodiments, methods for forming a chip package are provided. The chip package may include a chip comprising a chip metal surface, a metal contact structure electrically contacting the chip metal surface, a packaging material at least partially encapsulating the chip and the metal contact structure, and a chemical compound physically contacting the packaging material and at least one of the chip metal surface and the metal contact structure, wherein the chemical compound may be configured to improve an adhesion between the metal contact structure and the packaging material and/or between the chip metal surface and the packaging material, as compared with an adhesion in an arrangement without the chemical compound, wherein the chemical compound is essentially free from functional groups comprising sulfur, selenium or tellurium.

公开(公告)号：US20170338164A1

公开(公告)日：2017-11-23

申请号：US15599492

申请日：2017-05-19

Applicant: Infineon Technologies AG

Inventor： Heinrich Koerner ,  Michael Bauer ,  Reimund Engl ,  Michael Huettinger ,  Werner Kanert ,  Joachim Mahler ,  Brigitte Ruehle

IPC: H01L23/29 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/293 ,  H01L21/56 ,  H01L23/295 ,  H01L23/296 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/73265 ,  H01L2924/01029 ,  H01L2924/181 ,  H01L2924/365 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45669

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.

公开(公告)号：US10978418B2

公开(公告)日：2021-04-13

申请号：US16572626

申请日：2019-09-17

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02 ,  H01L23/495

Abstract: A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

公开(公告)号：US10672678B2

公开(公告)日：2020-06-02

申请号：US16431808

申请日：2019-06-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Heinrich Koerner ,  Michael Bauer ,  Reimund Engl ,  Michael Huettinger ,  Werner Kanert ,  Joachim Mahler ,  Brigitte Ruehle

IPC: H01L23/31 ,  H01L23/495 ,  H01L21/56

Abstract: In various embodiments, methods for forming a chip package are provided. The chip package may include a chip comprising a chip metal surface, a metal contact structure electrically contacting the chip metal surface, a packaging material at least partially encapsulating the chip and the metal contact structure, and a chemical compound physically contacting the packaging material and at least one of the chip metal surface and the metal contact structure, wherein the chemical compound may be configured to improve an adhesion between the metal contact structure and the packaging material and/or between the chip metal surface and the packaging material, as compared with an adhesion in an arrangement without the chemical compound, wherein the chemical compound is essentially free from functional groups comprising sulfur, selenium or tellurium.

公开(公告)号：US20170338169A1

公开(公告)日：2017-11-23

申请号：US15600857

申请日：2017-05-22

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2224/45669 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01056 ,  H01L2924/00 ,  H01L2224/43848

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.