摘要:
A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.
摘要:
A lead member for electronic parts which has excellent heat resistance, oxidation resistance and corrosion resistance and is especially excellent in solderability and a process of producing such a lead member at low cost by plating are provided. The lead member comprises a base, at least a surface region of which is made of Cu or a Cu alloy, a primary coat of Ni, Co, a Ni alloy or a Co alloy and a surface layer of Pd, Ru, a Pd alloy or a Ru alloy formed sequentially on the base in the order mentioned. The primary coat consists of grains having a grain size of 20 .mu.m or more.
摘要:
A band-shaped and/or filamentary material, having a phosphorus containing metal and/or metal alloy inner layer such as phosphor bronze, deoxidized copper or other similar phosphorus containing material, and a lead alloy outer layer, particularly a lead-tin alloy, wherein the phosphorus content of the inner layer is between 0.03 and 0.13 weight percent. In the preferred embodiment, the amount of phosphorus in the inner layer is between 0.05 and 0.06 weight percent. Electrical conductors and electronic components of this band-shaped and/or filamentary material are also disclosed.
摘要:
A wire structure, which may be configured for a semiconductor device, is disclosed. The wire may include an elongate flexible core formed of a conductor material and a cladding layer covering an outer surface of the core. The cladding layer may be a conductor. In various aspects the cladding layer and core have a different grain sizes. An average grain size of the core material may several orders of magnitude greater than an average grain size of the cladding layer material. The cladding layer may be an alloy having a varying concentration of a minor component across its thickness. Methods of forming a wire structure are also disclosed.
摘要:
A method of manufacturing a soft-dilute-copper-alloy material includes a plastic working of a soft-dilute-copper-alloy including an additional element selected from the group consisting of Ti, Mg, Zr, Nb, Ca, V, Ni, Mn and Cr, and a balance consisting of copper and inevitable impurity, and a subsequent annealing treatment of the soft-dilute-copper-alloy. A working ratio in the plastic working before the annealing treatment is not less than 50%.
摘要:
A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.
摘要:
A bonding wire comprising a core and a coating layer formed on the core, wherein the coating layer is formed from a metal having a higher melting point than the core, and further has at least one of the following characteristics; 1. the wet contact angle with the coating layer when the core is melted is not smaller than 20 degrees; 2. when the bonding wire is hung down with its end touching a horizontal surface, and is cut at a point 15 cm above the end and thus let drop onto the horizontal surface, the curvature radius of the formed arc is 35 mm or larger; 3. the 0.2% yield strength is not smaller than 0.115 mN/μm2 but not greater than 0.165 mN/μm2; or 4. the Vickers hardness of the coating layer is 300 or lower.
摘要翻译:一种接合线,其包括芯和形成在所述芯上的涂层,其中所述涂层由具有比所述芯更高的熔点的金属形成,并且还具有以下特征中的至少一个; 当芯熔化时与涂层的湿接触角不小于20度; 2.当接合线悬挂时,其端部接触水平表面,并在端部上方15厘米处切割,因此落在水平面上,所形成的弧的曲率半径为35毫米或更大; 0.2%的屈服强度不小于0.115mN / m 2,但不大于0.165mN / m 2。 或4.涂层的维氏硬度为300以下。
摘要:
A new and improved electrical connector is provided for Ball Grid Array (BGA) devices and Direct Chip Attach (DCA) devices that solves the prior art problems of mismatch in the coefficient of thermal between a semiconductor die and its substrate, PC board or carrier. The electrical connector consists of a resilient loop of wire that is permanently wire bonded at a first and a second bond position to an electrode or contact pad of a die or an interposer. The closed loop of wire is stable in the X and Y direction and resilient in the Z direction which enables the wire bonded die or interposer to be temporarily attached to a carrier or test board for all forms of tests as well as being removable and reworkable even after being permanently soldered in place on a substrate or PC board. Since the loop shaped connectors are resilient in X, Y and Z directions, the die or interposer may be clamped onto a PC board or substrate to provide a lead free electrical connection that does not require any underfill. The loop size may be made with highly conductive and/or plated (coated) wire in sizes from about 2.5 mils diameter up to about 30 mils using wire having a diameter of about 1.0 mils up to 5.0 mils to replace prior art balls used on pads of about 3 mils size or greater.
摘要:
1,147,522. Glass to metal seals. NIPPON ELECTRIC CO. Ltd. 14 July, 1966 [31 July, 1965], No. 31737/66. Heading C1M. [Also in Divisions B3 and C7] A composite metal material to be sealed to glass comprises an iron-nickel or iron core, an intermediate coating of Sn, Cu, Ag or Au of 0À01 to 5 microns and a surface coating of Pd of 0À01 to 2 microns. The material may be heated to e.g. 750‹ C. in hydrogen. In examples an iron-nickel alloy coated with copper, silver or gold and then palladium was heated, treated in hydrogen and then sealed in air to a lead glass PbO 75; B 2 O 11; SiO 2 3; Al 2 O 3 11 in wt. percentages. Iron wire coated with silver and Pd was similarly heat treated in H 2 and sealed to a glass appropriate to an iron seal.
摘要:
A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.