公开(公告)号：US20200013749A1

公开(公告)日：2020-01-09

申请号：US16572626

申请日：2019-09-17

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L21/02

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

公开(公告)号：US10497587B1

公开(公告)日：2019-12-03

申请号：US16007038

申请日：2018-06-13

Applicant: Infineon Technologies AG

Inventor： Rabie Djemour ,  Michael Bauer ,  Stefan Miethaner

IPC: H01L21/00 ,  H01L21/56 ,  H01L23/29 ,  H01L21/67

Abstract: A method for manipulating ions contained in an encapsulation material for a semiconductor device is provided. The method includes processing the encapsulation material and applying an electric field to the encapsulation material before the encapsulation material is finally cured. The ions contained in the encapsulation material have a mobility that decreases as the encapsulation material cures. By applying the electric field to the encapsulation material before the encapsulation material is finally cured, the amount of ions contained in the encapsulation material is reduced and/or the ions contained are concentrated in one or more regions of the encapsulation material. Corresponding apparatuses and semiconductor packages manufactured by the method are also described.

公开(公告)号：US20180350683A1

公开(公告)日：2018-12-06

申请号：US16102174

申请日：2018-08-13

Applicant: Infineon Technologies AG

Inventor： Georg Meyer-Berg ,  Claus von Waechter ,  Michael Bauer ,  Holger Doepke ,  Dominic Maier ,  Daniel Porwol ,  Tobias Schmidt

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/56 ,  B32B37/26

Abstract: A method for handling a product substrate includes bonding a carrier to the product substrate by: applying a layer of a temporary adhesive having a first coefficient of thermal expansion onto a surface of the carrier; and bonding the carrier to the product substrate using the applied temporary adhesive. A surface of the temporary adhesive is in direct contact to a surface of the product substrate. The temporary adhesive includes or is adjacent a filler material having a second coefficient of thermal expansion which is smaller than the first coefficient of thermal expansion, so that stress occurs inside the temporary adhesive layer or at an interface to the product substrate or the carrier during cooling down of the temporary adhesive layer.

公开(公告)号：US09941181B2

公开(公告)日：2018-04-10

申请号：US15599492

申请日：2017-05-19

Applicant: Infineon Technologies AG

Inventor： Heinrich Koerner ,  Michael Bauer ,  Reimund Engl ,  Michael Huettinger ,  Werner Kanert ,  Joachim Mahler ,  Brigitte Ruehle

IPC: H01L23/28 ,  H01L23/29 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/293 ,  H01L21/56 ,  H01L23/295 ,  H01L23/296 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/73265 ,  H01L2924/01029 ,  H01L2924/181 ,  H01L2924/365 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45669

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.

公开(公告)号：US09881909B2

公开(公告)日：2018-01-30

申请号：US14926892

申请日：2015-10-29

Applicant: Infineon Technologies AG

Inventor： Michael Bauer ,  Ludwig Heitzer ,  Christian Stuempfl

IPC: H01L21/4763 ,  H01L25/16 ,  H01L23/485 ,  H01L21/02 ,  H01L21/78 ,  H01L25/00 ,  H01L25/04 ,  H01L23/00

CPC classification number: H01L25/16 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/78 ,  H01L23/485 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/20 ,  H01L24/24 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/04 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/273 ,  H01L2224/274 ,  H01L2224/291 ,  H01L2224/3201 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/83801 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2224/27 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A method for fabricating an electronic device includes providing a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first semiconductor die and a first solder interconnect layer applied to a main face of the first semiconductor die. The second semiconductor chip has a second semiconductor die, an insulating layer applied to a main face of the second semiconductor die, and a second solder interconnect layer applied to the insulating layer. The method further includes attaching the first semiconductor chip with the first solder interconnect layer to a first carrier and attaching the second semiconductor chip with the second solder interconnect layer to a second carrier.

公开(公告)号：US09859198B2

公开(公告)日：2018-01-02

申请号：US14569958

申请日：2014-12-15

Applicant: Infineon Technologies AG

Inventor： Michael Bauer ,  Alfred Haimerl ,  Angela Kessler ,  Wolfgang Schober

IPC: H01L23/498 ,  H01L23/13 ,  H01L23/12 ,  H01L23/31 ,  H01L23/492 ,  H01L21/56 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/56 ,  H01L23/12 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/492 ,  H01L23/49562 ,  H01L23/49805 ,  H01L23/49833 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

Abstract: A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.

公开(公告)号：US20160218039A1

公开(公告)日：2016-07-28

申请号：US15002009

申请日：2016-01-20

Applicant: Infineon Technologies AG

Inventor： Georg Meyer-Berg ,  Claus von Waechter ,  Michael Bauer ,  Holger Doepke ,  Dominic Maier ,  Daniel Porwol ,  Tobias Schmidt

IPC: H01L21/78 ,  H05K3/00 ,  H01L21/683

CPC classification number: H01L21/78 ,  B32B37/26 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/562 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H05K3/007 ,  Y10S156/93 ,  Y10S156/941

Abstract: A method for handling a product substrate includes bonding a carrier to the product substrate. A layer of a permanent adhesive is applied onto a surface of the carrier. A structured intermediate layer is provided. The applied permanent adhesive bonds the carrier to the product substrate. The structured intermediate layer is arranged between the product substrate and the carrier. A surface of the structured intermediate layer and a surface of the permanent adhesive are in direct contact to a surface of the product substrate. The structured intermediate layer decreases a bonding strength between the product substrate and the carrier.

Abstract translation: 一种用于处理产品基板的方法包括将载体接合到产品基板。 将一层永久性粘合剂施加到载体的表面上。 提供了结构化的中间层。 施加的永久性粘合剂将载体粘合到产品基材上。 结构化中间层布置在产品基板和载体之间。 结构化中间层的表面和永久性粘合剂的表面直接接触产品基材的表面。 结构化中间层降低了产品基板和载体之间的结合强度。

公开(公告)号：US12033972B2

公开(公告)日：2024-07-09

申请号：US17090941

申请日：2020-11-06

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Michael Bauer ,  Jochen Dangelmaier ,  Reimund Engl ,  Johann Gatterbauer ,  Frank Hille ,  Michael Huettinger ,  Werner Kanert ,  Heinrich Koerner ,  Brigitte Ruehle ,  Francisco Javier Santos Rodriguez ,  Antonio Vellei

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/48 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02288 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L23/3107 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0346 ,  H01L2224/03826 ,  H01L2224/03827 ,  H01L2224/03831 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45649 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/4567 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/4568 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48507 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85801 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/45144 ,  H01L2924/00015 ,  H01L2224/45139 ,  H01L2924/00015 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45572 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45644 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45639 ,  H01L2924/00014 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00014 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45669 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45644 ,  H01L2224/45565 ,  H01L2224/45139 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45611 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45618 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45649 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45657 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45666 ,  H01L2224/45655 ,  H01L2924/01029 ,  H01L2224/45565 ,  H01L2224/45147 ,  H01L2224/45639 ,  H01L2224/45664 ,  H01L2924/01028 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05681 ,  H01L2924/00014 ,  H01L2224/05657 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/01056 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/43848

Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

公开(公告)号：US10128180B2

公开(公告)日：2018-11-13

申请号：US15821879

申请日：2017-11-24

Applicant: Infineon Technologies AG

Inventor： Michael Bauer ,  Alfred Haimerl ,  Angela Kessler ,  Wolfgang Schober

IPC: H01L23/498 ,  H01L23/13 ,  H01L23/12 ,  H01L23/31 ,  H01L23/492 ,  H01L21/56 ,  H01L23/495 ,  H01L23/00

Abstract: A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.

公开(公告)号：US10056295B2

公开(公告)日：2018-08-21

申请号：US15002009

申请日：2016-01-20

Applicant: Infineon Technologies AG

Inventor： Georg Meyer-Berg ,  Claus von Waechter ,  Michael Bauer ,  Holger Doepke ,  Dominic Maier ,  Daniel Porwol ,  Tobias Schmidt

IPC: H01L21/78 ,  H01L21/683 ,  B32B37/26 ,  H01L21/56 ,  H01L23/00 ,  H05K3/00

CPC classification number: H01L21/78 ,  B32B37/26 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/562 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H05K3/007 ,  Y10S156/93 ,  Y10S156/941

Abstract: A method for handling a product substrate includes bonding a carrier to the product substrate. A layer of a permanent adhesive is applied onto a surface of the carrier. A structured intermediate layer is provided. The applied permanent adhesive bonds the carrier to the product substrate. The structured intermediate layer is arranged between the product substrate and the carrier. A surface of the structured intermediate layer and a surface of the permanent adhesive are in direct contact to a surface of the product substrate. The structured intermediate layer decreases a bonding strength between the product substrate and the carrier.