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公开(公告)号:US20220342840A1
公开(公告)日:2022-10-27
申请号:US17852865
申请日:2022-06-29
Applicant: Intel Corporation
Inventor: Debendra Das Sharma , Swadesh Choudhary , Narasimha Lanka , Lakshmipriya Seshan , Gerald Pasdast , Zuoguo Wu
IPC: G06F13/42
Abstract: A port is to couple to another die over a die-to-die (D2D) link and includes physical layer (PHY) circuitry including a first number of sideband lanes to carry data for use in training and management of the D2D link, and a second number of mainband lanes to implement a main data path of the D2D link. The mainband lanes include a forwarded clock lane, a valid lane, and a plurality of data lanes. A logical PHY coordinates functions of the sideband lanes and the mainband lanes.
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公开(公告)号:US20220199537A1
公开(公告)日:2022-06-23
申请号:US17127304
申请日:2020-12-18
Applicant: Intel Corporation
Inventor: Zhiguo Qian , Gerald Pasdast , Peipei Wang , Daniel Krueger , Edward Burton
IPC: H01L23/538 , H01L23/50 , H01L25/065 , H01L21/50
Abstract: An integrated circuit (IC) package, comprising a substrate that comprises a bridge die embedded within a dielectric. A first die comprising a first input/output (I/O) transmitter and a second die comprising a second I/O receiver and electrically coupled to the bridge die. A first signal trace and a first power conductor are within the bridge die. The first signal trace and the first power conductor are electrically coupled to the first I/O transmitter and the second I/O receiver. The first signal trace is to carry a digital signal and the first power conductor to provide a voltage for the second I/O receiver to read the digital signal.
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公开(公告)号:US20210159179A1
公开(公告)日:2021-05-27
申请号:US16698557
申请日:2019-11-27
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Shawna Liff , Johanna Swan , Gerald Pasdast
IPC: H01L23/538 , H01L21/304 , H01L21/48 , H01L23/00
Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.
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公开(公告)号:US20210098407A1
公开(公告)日:2021-04-01
申请号:US16586158
申请日:2019-09-27
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Patrick Morrow , Johanna Swan , Shawna Liff , Mauro Kobrinksy , Van Le , Gerald Pasdast
IPC: H01L23/00 , H01L23/48 , H01L23/528 , H01L23/522 , H01L25/18 , H01L25/00 , H01L21/768 , H01L21/82
Abstract: A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.
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5.
公开(公告)号:US11749649B2
公开(公告)日:2023-09-05
申请号:US17399185
申请日:2021-08-11
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Johanna Swan , Shawna Liff , Patrick Morrow , Gerald Pasdast , Van Le
IPC: H01L25/065 , H01L23/538 , H01L23/522 , H01L23/00 , H01L25/00
CPC classification number: H01L25/0657 , H01L23/5226 , H01L23/5389 , H01L24/08 , H01L24/09 , H01L25/50 , H01L2224/08146 , H01L2224/0912
Abstract: Composite IC chip including a chiplet embedded within metallization levels of a host IC chip. The chiplet may include a device layer and one or more metallization layers interconnecting passive and/or active devices into chiplet circuitry. The host IC may include a device layer and one or more metallization layers interconnecting passive and/or active devices into host chip circuitry. Features of one of the chiplet metallization layers may be directly bonded to features of one of the host IC metallization layers, interconnecting the two circuitries into a composite circuitry. A dielectric material may be applied over the chiplet. The dielectric and chiplet may be thinned with a planarization process, and additional metallization layers fabricated over the chiplet and host chip, for example to form first level interconnect interfaces. The composite IC chip structure may be assembled into a package substantially as a monolithic IC chip.
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6.
公开(公告)号:US20230230923A1
公开(公告)日:2023-07-20
申请号:US17824974
申请日:2022-05-26
Applicant: Intel Corporation
Inventor: Gerald Pasdast , Zhiguo Qian , Sathya Narasimman Tiagaraj , Lakshmipriya Seshan , Peipei Wang , Debendra Das Sharma , Srikanth Nimmagadda , Zuoguo Wu , Swadesh Choudhary , Narasimha Lanka
IPC: H01L23/538 , H01L25/16 , H01L23/00
CPC classification number: H01L23/5382 , H01L23/5386 , H01L24/16 , H01L25/16 , H01L2224/16225
Abstract: A microelectronic device, a semiconductor package including the device, an IC device assembly including the package, and a method of making the device. The device includes a substrate; physical layer (PHY) circuitry on the substrate including a plurality of receive (RX) circuits and a plurality of transmit (TX) circuits; electrical contact structures at a bottom surface of the device; signal routing paths extending between the electrical contact structures on one hand, and, on another hand, at least some of the RX circuits or at least some of the TX circuits; and electrical pathways leading to the PHY circuitry and configured such that at least one of: an enable signal input to the device is to travel through at least some of the electrical pathways to enable a portion of the PHY circuitry; or a disable signal input to the device is to travel through at least some of the electrical pathways to disable a corresponding portion of the PHY circuitry.
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公开(公告)号:US20220327083A1
公开(公告)日:2022-10-13
申请号:US17844366
申请日:2022-06-20
Applicant: Intel Corporation
Inventor: Debendra Das Sharma , Swadesh Choudhary , Narasimha Lanka , Zuoguo Wu , Gerald Pasdast , Lakshmipriya Seshan
IPC: G06F13/42 , H01L23/538 , G06F13/40
Abstract: In one embodiment, a first die comprises: a first die-to-die adapter to communicate with first protocol layer circuitry via a flit-aware die-to-die interface (FDI) and first physical layer circuitry via a raw die-to-die interface (RDI), where the first die-to-die adapter is to receive message information comprising first information of a first interconnect protocol; and the first physical layer circuitry coupled to the first die-to-die adapter. The first physical layer circuitry may be configured to receive and output the first information to a second die via an interconnect, the first physical layer circuitry comprising a plurality of modules, each of the plurality of modules comprising an analog front end having transmitter circuitry and receiver circuitry. Other embodiments are described and claimed.
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公开(公告)号:US20220197321A1
公开(公告)日:2022-06-23
申请号:US17128073
申请日:2020-12-19
Applicant: Intel Corporation
Inventor: Sathya Narasimman Tiagaraj , Gerald Pasdast , Edward Burton
Abstract: A dual-loop low-drop (LDO) regulator having a first loop which is an analog loop that compares the voltage on the output supply node with a reference, and generates a bias or voltage control to control a strength of a final power switch. The first loop regulates the output voltage relative to a reference voltage by minimizing the error between the two voltages. A second loop (digital loop) that controls a current source which injects current on the gate of the final power switch to boost current for a load. The second loop is an auxiliary loop that boosts the current load for a set interval until the tracking bandwidth of the LDO resolves the error in the output, thereby reducing the peak-to-peak noise. The quiescent current is not increased a lot by the second loop since the second loop circuit is on for a fraction of the entire LDO operation.
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公开(公告)号:US11294852B2
公开(公告)日:2022-04-05
申请号:US16917888
申请日:2020-06-30
Applicant: Intel Corporation
Inventor: Nevine Nassif , Yen-Cheng Liu , Krishnakanth V. Sistla , Gerald Pasdast , Siva Soumya Eachempati , Tejpal Singh , Ankush Varma , Mahesh K. Kumashikar , Srikanth Nimmagadda , Carleton L. Molnar , Vedaraman Geetha , Jeffrey D. Chamberlain , William R. Halleck , George Z. Chrysos , John R. Ayers , Dheeraj R. Subbareddy
IPC: G06F1/04 , G06F15/78 , G06F1/10 , G06F15/167 , G06F9/38 , G06F9/50 , G06F15/173
Abstract: Methods and apparatuses relating to hardware processors with multiple interconnected dies are described. In one embodiment, a hardware processor includes a plurality of physically separate dies, and an interconnect to electrically couple the plurality of physically separate dies together. In another embodiment, a method to create a hardware processor includes providing a plurality of physically separate dies, and electrically coupling the plurality of physically separate dies together with an interconnect.
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公开(公告)号:US20220037281A1
公开(公告)日:2022-02-03
申请号:US17500824
申请日:2021-10-13
Applicant: Intel Corporation
Inventor: Adel Elsherbini , Patrick Morrow , Johanna Swan , Shawna Liff , Mauro Kobrinksy , Van Le , Gerald Pasdast
IPC: H01L23/00 , H01L23/528 , H01L23/522 , H01L25/18 , H01L25/00 , H01L21/768 , H01L21/82 , H01L23/48
Abstract: A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.
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