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公开(公告)号：US09790127B2
公开(公告)日：2017-10-17
申请号：US13804766
申请日：2013-03-14
Applicant: INTERMOLECULAR INC. , GUARDIAN INDUSTRIES CORP.
Inventor： Guowen Ding , Jeremy Cheng , Tong Ju , Minh Huu Le , Phil Lingle , Daniel Schweigert , Zhi-Wen Wen Sun , Guizhen Zhang
IPC: C03C17/36
CPC classification number: C03C17/366 , C03C17/36 , C03C17/3639 , C03C17/3644 , C03C17/3652 , Y10T428/24975 , Y10T428/265
Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.
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公开(公告)号：US20150191815A1
公开(公告)日：2015-07-09
申请号：US14661958
申请日：2015-03-18
Applicant: Intermolecular Inc.
Inventor： Guowen Ding , Brent Boyce , Jeremy Cheng , Muhammad Imran , Jingyu Lao , Minh Huu Le , Daniel Schweigert , Zhi-Wen Wen Sun , Yu Wang , Yongli Xu , Guizhen Zhang
IPC: C23C14/08
CPC classification number: C23C14/08 , C03C17/36 , C03C17/3618 , C03C17/3644 , C03C17/366 , C03C17/3681 , C23C14/0036 , C23C14/083 , C23C14/185 , C23C14/3464 , G02B5/0875 , G02B5/208 , Y10T428/12611
Abstract: A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %.
Abstract translation: 一种制造低发射率面板的方法，包括控制形成在薄导电银层上的阻挡层的组成。 阻挡结构可以包括镍，钛和铌的三元合金，其显示出比来自二元屏障结果的整体性能的改善。 镍的百分比可以在5和15重量％之间。 钛的百分比可以在30-50重量％之间。 铌的百分比可以在40至60重量％之间。
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3.发明申请Low Resistivity Nitrogen-Doped Zinc Telluride and Methods for Forming the Same 审中-公开低电阻率氮掺杂锌碲化物及其形成方法公开(公告)号：US20150171260A1
公开(公告)日：2015-06-18
申请号：US14108697
申请日：2013-12-17
Applicant: Intermolecular Inc.
Inventor： Wei Liu , Amir Bayati , Zhi-Wen Wen Sun
IPC: H01L31/18 , H01L31/0224
CPC classification number: H01L31/1828 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: Embodiments provided herein describe methods for forming nitrogen-doped zinc telluride, such as for use in photovoltaic devices. The zinc telluride layer is formed using physical vapor deposition (PVD) at a processing temperature of between about 100° C. and about 450° C. in a gaseous environment that includes between about 3% and about 10% by volume of nitrogen gas.
Abstract translation: 本文提供的实施方案描述了形成氮掺杂的碲化锌的方法，例如用于光伏器件中的方法。 在包括约3体积％至约10体积％的氮气的气体环境中，使用物理气相沉积（PVD）在约100℃至约450℃的加工温度下形成碲化锌层。
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4.发明授权Method to extend single wavelength ellipsometer to obtain spectra of refractive index 有权扩展单波长椭偏仪以获得折射率光谱的方法公开(公告)号：US09019483B2
公开(公告)日：2015-04-28
申请号：US13727854
申请日：2012-12-27
Applicant: Intermolecular Inc.
Inventor： Guowen Ding , Brent Boyce , Mohd Fadzli Anwar Hassan , Minh Huu Le , Zhi-Wen Wen Sun , Yu Wang
IPC: G01N21/41
CPC classification number: G01N21/4133 , G01N21/211 , G01N21/41
Abstract: Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides.
Abstract translation: 提供了使用从单个波长椭偏仪获得的数据来确定作为薄导电膜的波长的函数的材料的折射率的方法。 该方法可用于计算作为金属薄膜和导电材料如导电金属氮化物或导电金属氧化物的波长的函数的折射率谱。
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公开(公告)号：US20140231744A1
公开(公告)日：2014-08-21
申请号：US14264475
申请日：2014-04-29
Applicant: Intermolecular Inc.
Inventor： Nitin Kumar , Tony P. Chiang , Chi-I Lang , Zhi-Wen Wen Sun , Jinhong Tong
IPC: H01L45/00
CPC classification number: H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。
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Patent Agency Ranking
公开(公告)号：US09321676B2
公开(公告)日：2016-04-26
申请号：US14702284
申请日：2015-05-01
Applicant: Intermolecular Inc. , Guardian Industries Corp.
Inventor： Mohd Fadzli Anwar Hassan , Brent Boyce , Guowen Ding , Muhammad Imran , Minh Huu Le , Zhi-Wen Wen Sun , Yu Wang , Yongli Xu
CPC classification number: C03C17/23 , C03C17/06 , C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/211 , C03C2217/24 , C30B23/00 , C30B25/00 , G02B5/208 , G02B5/285 , Y10T428/24868 , Y10T428/24975 , Y10T428/265
Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).
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公开(公告)号：US09178145B2
公开(公告)日：2015-11-03
申请号：US14264475
申请日：2014-04-29
Applicant: Intermolecular Inc.
Inventor： Nitin Kumar , Tony P. Chiang , Chi-I Lang , Zhi-Wen Wen Sun , Jinhong Tong
CPC classification number: H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。
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公开(公告)号：US09121100B2
公开(公告)日：2015-09-01
申请号：US13715477
申请日：2012-12-14
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Guowen Ding , Minh Huu Le , Minh Anh Anh Nguyen , Zhi-Wen Wen Sun , Guizhen Zhang
CPC classification number: H05K1/092 , C23C28/42 , C23C30/00 , H01L51/0097 , H01L51/5234 , H05K1/0274 , Y10T428/265
Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.
Abstract translation: 制造导电叠层的方法包括形成夹在两层透明导电氧化物（例如氧化铟锡（ITO））之间的掺杂或合金化的银层。 掺杂的银或银合金层可以是薄的，例如在1.5至20nm之间，因此可以是透明的。 掺杂的银或银合金可以提供改善的延展性，允许导电叠层可弯曲。 透明导电氧化物层也可以是薄的，允许导电叠层具有改善的延展性。
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公开(公告)号：US20150232376A1
公开(公告)日：2015-08-20
申请号：US14702284
申请日：2015-05-01
Applicant: Intermolecular Inc.
Inventor： Mohd Fadzli Anwar Hassan , Brent Boyce , Guowen Ding , Muhammad Imran , Minh Huu Le , Zhi-Wen Wen Sun , Yu Wang , Yongli Xu
IPC: C03C17/23
CPC classification number: C03C17/23 , C03C17/06 , C03C17/34 , C03C17/36 , C03C17/3626 , C03C17/3644 , C03C17/366 , C03C2217/211 , C03C2217/24 , C30B23/00 , C30B25/00 , G02B5/208 , G02B5/285 , Y10T428/24868 , Y10T428/24975 , Y10T428/265
Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).
Abstract translation: 双层种子层可以表现出良好的红外反射层的种子性质以及改进的热稳定性。 双层种子层可以包括具有设置在具有期望的热稳定性的底层上的银红外反射层的所需晶体取向的薄氧化锌层。 热稳定层可以包括铝，镁或铋掺杂的氧化锡（AlSnO，MgSnO或BiSnO），其可以比氧化锌具有更好的热稳定性，但是用作银（111）的种子层模板更差的晶格匹配。
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10.发明授权High-selectivity wet patterning of source-drain electrodes over TAOS for a BCE device structure 有权对于BCE器件结构，源极 - 漏极电极的高选择性湿式图案化在TAOS上公开(公告)号：US08961814B2
公开(公告)日：2015-02-24
申请号：US14132383
申请日：2013-12-18
Applicant: Intermolecular Inc.
Inventor： Jeroen Van Duren , Zhi-Wen Wen Sun
IPC: C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , C09K13/02 , H01L21/306 , H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786 , H01L21/465 , H01L21/70
CPC classification number: H01L21/30604 , H01L21/02565 , H01L21/02631 , H01L21/32134 , H01L21/465 , H01L21/707 , H01L27/1225 , H01L27/1262 , H01L29/45 , H01L29/66969 , H01L29/7869
Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.
Abstract translation: 提出了用于选择性蚀刻沉积在制造TFT基显示器件中的金属基半导体层之上的蚀刻停止层的方法和配方。 制剂基于碱性溶液。 提出了用于选择性蚀刻沉积在制造TFT基显示装置中的金属基半导体层之上的钼基和/或铜基源/漏电极层的方法和配方。 制剂基于碱性溶液。
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