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1.发明申请DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH 有权DOPED，PASSIVATED GRAPHENE NANOMESH，制造DOPED，钝化的石墨纳米微粒的方法和包括DOPED，钝化的石墨纳米微粒的半导体器件公开(公告)号：US20150069305A1
公开(公告)日：2015-03-12
申请号：US14542408
申请日：2014-11-14
CPC分类号： H01L23/29 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01L29/1606 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A doped, passivated graphene nanomesh includes a graphene nanomesh, a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh.
摘要翻译： 掺杂的，钝化的石墨烯纳米粒子包括石墨烯纳米粒子，形成在石墨烯片中的多个纳米孔和与多个纳米孔相邻形成的多个碳原子; 与多个碳原子结合的钝化元素; 以及掺杂剂，其与所述钝化元件结合，所述掺杂剂包括用于制造所述石墨烯纳米颗粒的n掺杂石墨烯纳米粒子的供电子元件和用于制造所述石墨烯纳米粒子的电子接受元件，所述电子受体元件是p掺杂石墨烯纳米粒子。
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公开(公告)号：US10566537B2
公开(公告)日：2020-02-18
申请号：US14820039
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC分类号： B32B9/00 , H01L51/00 , H01L51/05 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , B82Y10/00 , B82Y40/00 , C23C16/26 , H01B1/04 , H01L51/10 , H01L29/16 , H01L29/778 , H01L29/66 , H01L29/786 , B82Y30/00 , H01L29/06
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.
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3.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 审中-公开碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20150348667A1
公开(公告)日：2015-12-03
申请号：US14820039
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC分类号： H01B1/04
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.
摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 纳米管 - 石墨烯混合膜包括基板; 纳米管膜沉积在衬底上以产生一层纳米管膜; 和石墨烯沉积在纳米管膜的层上以产生纳米管 - 石墨烯混合膜。
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4.发明授权Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomesh 有权掺杂的，钝化的石墨烯纳米粒子，制备掺杂的钝化石墨烯纳米粒子的方法，以及包括掺杂的，钝化的石墨烯纳米粒子的半导体器件公开(公告)号：US09142471B2
公开(公告)日：2015-09-22
申请号：US14542408
申请日：2014-11-14
CPC分类号： H01L23/29 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01L29/1606 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A doped, passivated graphene nanomesh includes a graphene nanomesh, a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron-donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh.
摘要翻译： 掺杂的，钝化的石墨烯纳米粒子包括石墨烯纳米粒子，形成在石墨烯片中的多个纳米孔和与多个纳米孔相邻形成的多个碳原子; 与多个碳原子结合的钝化元素; 以及掺杂剂，其与所述钝化元件结合，所述掺杂剂包括用于制造所述石墨烯纳米颗粒的n掺杂石墨烯纳米粒子的供电子元件和用于制造所述石墨烯纳米粒子的电子接受元件，所述电子受体元件是p掺杂石墨烯纳米粒子。
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公开(公告)号：US09887361B2
公开(公告)日：2018-02-06
申请号：US14820028
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC分类号： C23C16/02 , C23C16/26 , H01L51/00 , H01L51/05 , H01B1/04 , H01L51/10 , H01L29/16 , H01L29/778 , H01L29/66 , H01L29/786 , B82Y10/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , H01L29/06 , B82Y30/00
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
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6.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20150340617A1
公开(公告)日：2015-11-26
申请号：US14820011
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.
摘要翻译： 纳米管 - 石墨烯混合纳米组分和形成清洁的纳米管 - 石墨烯混合纳米组分的方法。 纳米管 - 石墨烯混合纳米组分包括一个栅极; 形成在栅极上的栅极电介质; 包括形成在所述栅极电介质上的碳纳米管 - 石墨烯混合纳米组分的通道; 形成在碳纳米管 - 石墨烯混合纳米组分的第一区域上的源; 以及在碳纳米管 - 石墨烯混合纳米组分的第二区域上形成的漏极，以形成场效应晶体管。
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公开(公告)号：US20130164888A1
公开(公告)日：2013-06-27
申请号：US13772990
申请日：2013-02-21
发明人： Ageeth A. Bol , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , Dennis M. Newns , Razvan A. Nistor , George S. Tulevski
IPC分类号： H01L31/18
CPC分类号： H01L31/022433 , H01L31/022491 , H01L31/075 , Y02E10/548
摘要： A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.
摘要翻译： 太阳能电池包括半导体部分，设置在半导体部分的第一表面上的石墨烯层和在石墨烯层上图案化的第一导电层，第一导电层包括至少一个汇流条部分和从 所述至少一个汇流条部分。
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公开(公告)号：US09954175B2
公开(公告)日：2018-04-24
申请号：US14820011
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
IPC分类号： B32B9/00 , H01L51/00 , H01L51/05 , C23C16/26 , H01B1/04 , H01L51/10 , H01L29/16 , H01L29/778 , H01L29/66 , H01L29/786 , B82Y10/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , H01L29/06 , B82Y30/00
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.
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9.发明申请Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor 有权碳纳米管 - 石墨烯混合透明导体和场效应晶体管公开(公告)号：US20150349264A1
公开(公告)日：2015-12-03
申请号：US14820028
申请日：2015-08-06
发明人： Ageeth A. Bol , Bhupesh Chandra , Amal Kasry , Ahmed Maarouf , Glenn J. Martyna , George S. Tulevski
CPC分类号： H01L51/0048 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/158 , C01B32/182 , C01B32/186 , C01B32/192 , C01B2202/00 , C01B2204/00 , C23C16/26 , H01B1/04 , H01L29/0673 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78618 , H01L29/78684 , H01L29/78696 , H01L51/0025 , H01L51/0545 , H01L51/0562 , H01L51/0566 , H01L51/102 , H01L51/105 , Y10S977/742 , Y10S977/75 , Y10S977/938 , Y10T428/30
摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.
摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。
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公开(公告)号：US09786405B2
公开(公告)日：2017-10-10
申请号：US14699471
申请日：2015-04-29
IPC分类号： H01B1/04 , C23F1/02 , H01L21/04 , H01L21/02 , B32B15/20 , B32B9/04 , B32B9/00 , H01L21/324 , B32B3/00
CPC分类号： H01B1/04 , B32B3/00 , B32B3/12 , B32B9/007 , B32B9/041 , B32B15/20 , B32B2307/202 , B32B2307/206 , B32B2457/00 , B82Y30/00 , B82Y40/00 , C01B32/184 , C23F1/02 , H01L21/02527 , H01L21/042 , H01L21/324 , Y10T428/24545 , Y10T428/24851 , Y10T428/24909 , Y10T428/24917
摘要： Structures and methods for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.
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