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    Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device
    6.
    发明授权
    Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
    形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法

    公开(公告)号：US07569417B2

    公开(公告)日：2009-08-04

    申请号：US11353129

    申请日：2006-02-14

    申请人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Young-Lim Park

    发明人： Jin-Il Lee ,  Choong-Man Lee ,  Sung-Lae Cho ,  Young-Lim Park

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1233 ,  C23C16/305 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1675 ,  H01L45/1683

    摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.

    摘要翻译： 公开了可用于半导体存储器件的相变材料层及其形成方法。 该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源 气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成 第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层， 锑 - 碲复合材料在第一层复合材料上的铺设 r。 因此，可以在低温和功率下形成相变材料层以具有期望的电特性。

    Methods for fabricating a cell string and a non-volatile memory device including the cell string
    8.
    发明授权
    Methods for fabricating a cell string and a non-volatile memory device including the cell string 有权
    制造电池串的方法和包括电池串的非易失性存储装置

    公开(公告)号：US08785276B2

    公开(公告)日：2014-07-22

    申请号：US13198143

    申请日：2011-08-04

    申请人： Toshiro Nakanishi ,  Choong-Man Lee

    发明人： Toshiro Nakanishi ,  Choong-Man Lee

    IPC分类号： H01L21/336 ,  H01L21/4763 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11582

    摘要： A method for fabricating a cell string includes forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, filling the opening with a metal, and annealing the semiconductor pattern having the opening filled with the metal.

    摘要翻译： 一种电池串的制造方法，包括在半导体基板上形成层间电介质层，牺牲层和半导体图案，使得层间绝缘层和牺牲层沿与半导体基板平行的第一方向形成，以及 使得半导体图案在垂直于半导体衬底的第二方向上形成，通过图案化层间电介质层和牺牲层形成开口，用金属填充开口，并且将具有填充有金属的开口的半导体图案退火 。