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    High-density probe array
    3.
    发明授权
    High-density probe array 失效
    高密度探头阵列

    公开(公告)号：US07583095B2

    公开(公告)日：2009-09-01

    申请号：US11464571

    申请日：2006-08-15

    申请人： Dong-Chul Yoo ,  Byoung-Jae Bae ,  Jang-Eun Heo ,  Ji-Eun Lim ,  Dong-Hyun Im

    发明人： Dong-Chul Yoo ,  Byoung-Jae Bae ,  Jang-Eun Heo ,  Ji-Eun Lim ,  Dong-Hyun Im

    IPC分类号： G01R31/02

    CPC分类号： G01R3/00 ,  Y10T29/49151

    摘要： A probe array may be fabricated by forming probes arranged on a sacrificial substrate, forming a probe substrate above the probes, and removing the sacrificial substrate. In one embodiment, first probes may be two-dimensionally formed in row and column directions on a sacrificial substrate. Second probes may be formed between the first probes arranged in the row direction such that a distance between the first and second probes is smaller than the resolution limit in a lithography process. A probe substrate may be formed on the sacrificial substrate having the first and second probes, and the sacrificial substrate may be removed.

    摘要翻译： 可以通过形成设置在牺牲衬底上的探针，在探针上方形成探针衬底，以及去除牺牲衬底来制造探针阵列。 在一个实施例中，第一探针可以在牺牲衬底上在行和列方向上二维地形成。 可以在布置在行方向上的第一探针之间形成第二探针，使得第一和第二探针之间的距离小于光刻工艺中的分辨率极限。 可以在具有第一和第二探针的牺牲衬底上形成探针衬底，并且可以去除牺牲衬底。

    Method for depositing ferroelectric thin films using a mixed oxidant gas
    6.
    发明申请
    Method for depositing ferroelectric thin films using a mixed oxidant gas 审中-公开
    使用混合氧化剂气体沉积铁电薄膜的方法

    公开(公告)号：US20070058415A1

    公开(公告)日：2007-03-15

    申请号：US11520623

    申请日：2006-09-14

    申请人： Dong-Hyun Im ,  Byoung-Jae Bae ,  Ji-Eun Lim ,  Dong-Chul Yoo ,  Yeon-Kyu Jung

    发明人： Dong-Hyun Im ,  Byoung-Jae Bae ,  Ji-Eun Lim ,  Dong-Chul Yoo ,  Yeon-Kyu Jung

    IPC分类号： G11C11/22

    CPC分类号： H01L28/55 ,  C23C16/409 ,  H01L27/11502 ,  H01L28/65

    摘要： Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.

    摘要翻译： 公开了形成将多个金属有机源化合物引入反应室的铁电材料层的方法，以适当的比例供给源化合物以形成铁电体材料。 这些金属有机源化合物又与N 2 O 2 O 2 / O 2 O 2氧化剂气体混合物反应，其中N“ y O x分量代表氧化剂气体的至少50体积％。 金属有机源化合物和氧化剂气体混合物的混合物保持在反应室内的沉积温度和沉积压力，适于在金属有机源化合物和氧化剂气体之间产生足以形成铁电材料的沉积时间 层。 所得到的铁电材料层表现出改善的均匀性，例如在与底部电极的界面附近。

    Vertical Memory Devices And Methods Of Manufacturing The Same
    10.
    发明申请
    Vertical Memory Devices And Methods Of Manufacturing The Same 有权
    垂直存储器件及其制造方法

    公开(公告)号：US20120098139A1

    公开(公告)日：2012-04-26

    申请号：US13246152

    申请日：2011-09-27

    申请人： Soo-Doo Chae ,  Ki-Hyun Hwang ,  Han-Mei Choi ,  Dong-Chul Yoo

    发明人： Soo-Doo Chae ,  Ki-Hyun Hwang ,  Han-Mei Choi ,  Dong-Chul Yoo

    IPC分类号： H01L23/48 ,  H01L21/44

    CPC分类号： H01L27/11582 ,  H01L29/7926

    摘要： A vertical memory device includes a channel, a ground selection line (GSL), word lines, a string selection line (SSL), and a contact. The channel includes a vertical portion and a horizontal portion. The vertical portion extends in a first direction substantially perpendicular to a top surface of a substrate, and the horizontal portion is connected to the vertical portion and parallel to the top surface of the substrate. The GSL, the word lines and the SSL are formed on a sidewall of the vertical portion of the channel sequentially in the first direction, and are spaced apart from each other. The contact is on the substrate and electrically connected to the horizontal portion of the channel.

    摘要翻译： 垂直存储器件包括通道，接地选择线（GSL），字线，字符串选择线（SSL）和触点。 通道包括垂直部分和水平部分。 垂直部分在基本上垂直于基板的顶表面的第一方向上延伸，并且水平部分连接到垂直部分并且平行于基板的顶表面。 GSL，字线和SSL沿着第一方向依次形成在通道的垂直部分的侧壁上，并且彼此间隔开。 触点位于基板上并电连接到通道的水平部分。