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公开(公告)号：US08941299B2
公开(公告)日：2015-01-27
申请号：US11750824
申请日：2007-05-18
CPC分类号： C09K11/565 , H05B33/14
摘要： A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
摘要翻译： 发光器件包括电致发光材料和半导体纳米晶体。 半导体纳米晶体从电致发光材料接受能量并发光。
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公开(公告)号：US20080074050A1
公开(公告)日：2008-03-27
申请号：US11750824
申请日：2007-05-18
CPC分类号： C09K11/565 , H05B33/14
摘要： A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
摘要翻译： 发光器件包括电致发光材料和半导体纳米晶体。 半导体纳米晶体从电致发光材料接受能量并发光。
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公开(公告)号：US09550614B2
公开(公告)日：2017-01-24
申请号：US13486478
申请日：2012-06-01
申请人： Moungi G. Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan E. Halpert , Alexi Arango
发明人： Moungi G. Bawendi , Vladimir Bulovic , Seth Coe-Sullivan , Jean-Michel Caruge , Jonathan Steckel , Jonathan E. Halpert , Alexi Arango
CPC分类号： H01L33/14 , B65D71/36 , B65D81/261 , B65D2571/00141 , B65D2571/0045 , B65D2571/00574 , B65D2571/0066 , B65D2571/00728 , B82Y20/00 , B82Y30/00 , H01L27/156 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/26 , H01L33/42 , H01L51/5012 , H01L51/502 , H01L51/5048 , H01L51/5096 , H01L2933/0041
摘要： A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
摘要翻译： 发光器件包括半导体纳米晶体和包含无机材料的电荷输送层。 电荷输送层可以是空穴或电子传输层。 无机材料可以是无机半导体。
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4.发明申请DEVICE AND METHOD FOR LUMINESCENCE ENHANCEMENT BY RESONANT ENERGY TRANSFER FROM AN ABSORPTIVE THIN FILM 有权通过共振能量从吸收薄膜转移的发光增强的装置和方法公开(公告)号：US20150153493A1
公开(公告)日：2015-06-04
申请号：US14563023
申请日：2014-12-08
申请人： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
发明人： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
IPC分类号： G02B5/28
CPC分类号： G02B5/288 , F21K2/00 , G02B5/28 , G02B5/286 , G02B5/287 , G02B2207/113 , H01L31/02322 , H01L51/447 , H01L51/5271 , H01S3/0915 , H01S3/168 , H01S3/169 , Y02E10/52 , Y02E10/549 , Y02P70/521
摘要： Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.
摘要翻译： 公开了用于设计和制造用于增强发光分子，纳米结构和薄膜的亮度的装置的装置和方法。 该装置包括反射镜，电介质或间隔物，吸收层和发光层。 吸收层是强吸收有机或无机材料的连续薄膜。 发光层可以是连续的发光薄膜，或者是支撑在吸收层顶部上的隔离的发光物质，例如有机或金属 - 有机染料分子，半导体量子点或其它半导体纳米结构的排列。
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5.发明授权Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film 有权通过从吸收性薄膜的共振能量转移来增强发光的装置和方法公开(公告)号：US08908261B2
公开(公告)日：2014-12-09
申请号：US13358750
申请日：2012-01-26
申请人： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
发明人： Gleb M. Akselrod , Moungi G. Bawendi , Vladimir Bulovic , Jonathan R. Tischler , William A. Tisdale , Brian J. Walker
IPC分类号： F21K2/00 , H01L51/44 , G02B5/28 , H01L31/0232 , H01S3/0915 , H01S3/16 , H01L51/52
CPC分类号： G02B5/288 , F21K2/00 , G02B5/28 , G02B5/286 , G02B5/287 , G02B2207/113 , H01L31/02322 , H01L51/447 , H01L51/5271 , H01S3/0915 , H01S3/168 , H01S3/169 , Y02E10/52 , Y02E10/549 , Y02P70/521
摘要： Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.
摘要翻译： 公开了用于设计和制造用于增强发光分子，纳米结构和薄膜的亮度的装置的装置和方法。 该装置包括反射镜，电介质或间隔物，吸收层和发光层。 吸收层是强吸收有机或无机材料的连续薄膜。 发光层可以是连续的发光薄膜，或者是支撑在吸收层顶部上的隔离的发光物质，例如有机或金属 - 有机染料分子，半导体量子点或其它半导体纳米结构的排列。
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公开(公告)号：US20130216707A1
公开(公告)日：2013-08-22
申请号：US11959853
申请日：2007-12-19
CPC分类号： B05D1/34 , B05D1/005 , B05D7/52 , B22F1/0018 , B22F1/02 , B82Y20/00 , B82Y30/00 , H01L51/5012 , H01L51/5048
摘要： A composition includes a layer of nanoparticles and a layer of a second material.
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公开(公告)号：US20110278536A1
公开(公告)日：2011-11-17
申请号：US12781557
申请日：2010-05-17
CPC分类号： H05B33/14 , H01L21/02521 , H01L21/02579 , H01L21/02601 , H01L21/02628 , H05B33/10
摘要： A film can include a plurality of semiconductor nanocrystals and a J-aggregating material in solution. The film can exhibit 90% energy transfer efficiency from the J-aggregating material to the plurality of semiconductor nanocrystals. The film can exhibit photoluminescence that is enhanced at least 2.5 times over an equivalent film including the plurality of semiconductor nanocrystals alone when excited at 465 nm. The film can be contacted onto a substrate by spin casting.
摘要翻译： 膜可以包括多个半导体纳米晶体和溶液中的J-聚集材料。 该膜可以显示从J-聚集材料到多个半导体纳米晶体的90％能量转移效率。 当在465nm激发时，该膜可以表现出比包括单独的多个半导体纳米晶体的等效膜增强至少2.5倍的光致发光。 可以通过旋转浇铸将膜接触到基底上。
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公开(公告)号：US10225906B2
公开(公告)日：2019-03-05
申请号：US11253595
申请日：2005-10-20
IPC分类号： H05B33/10 , B41M5/025 , B82Y20/00 , B82Y30/00 , H01L21/67 , B41J2/005 , B41M3/00 , H05B33/14 , H01L51/50 , H01L51/56 , B41M1/02
摘要： A light emitting device includes a semiconductor nanocrystal in a layer. The layer can be a monolayer of semiconductor nanocrystals. The monolayer can form a pattern on a substrate.
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公开(公告)号：US10043993B2
公开(公告)日：2018-08-07
申请号：US11768015
申请日：2007-06-25
摘要： An electro-optical device can include a plurality of semiconductor nanocrystals. In some circumstances, the device can omit an electron transporting layer.
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公开(公告)号：US09935240B2
公开(公告)日：2018-04-03
申请号：US14101867
申请日：2013-12-10
申请人： Geoffrey J. S. Supran , Katherine W. Song , Gyuweon Hwang , Raoul Emile Correa , Yasuhiro Shirasaki , Moungi G. Bawendi , Vladimir Bulovic , Jennifer Scherer
发明人： Geoffrey J. S. Supran , Katherine W. Song , Gyuweon Hwang , Raoul Emile Correa , Yasuhiro Shirasaki , Moungi G. Bawendi , Vladimir Bulovic , Jennifer Scherer
IPC分类号： H01L29/06 , H01L31/00 , H01L33/28 , H01L51/42 , H01L31/055 , H01L21/02 , H01L31/0352 , H01L51/50
CPC分类号： H01L33/28 , H01L21/02601 , H01L31/035218 , H01L31/055 , H01L51/426 , H01L51/5008 , H01L51/502
摘要： A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.
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