摘要:
The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O (x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要:
The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要:
A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc.sub.2 of the other ferromagnetic thin film.
摘要:
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2
摘要:
The magnetoresistive effect element in accordance with the invention has several aspects. For instance, the magnetoresistive effect element includes an artificial lattice multilayered structure composed of a thin magnetic layer and a non-magnetic layer at least once successively deposited, and a bias field applying device for applying a bias magnetic field to the artificial lattice multilayered structure so that an orientation of residual magnetization of one of the thin magnetic layers having a greater coercive force than that of an adjacent thin magnetic layer, is the same as an orientation of a bias magnetic field to be applied to the artificial lattice multilayered structure. The magnetoresistive effect element provides enhanced regenerated outputs and also improves the symmetry of regenerated waveforms.
摘要:
A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc2 of the other ferromagnetic thin film.
摘要:
In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.
摘要:
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2
摘要:
A magnetoresistive element includes a first magnetic layer; and laminations of a second magnetic layer, a non-magnetic layer and a third magnetic layer. The laminations are adjacent to the first magnetic layer. The second magnetic layer and the third magnetic layer have different coercive forces, wherein the first magnetic layer is selected from CoCrTa, NdFe, and alloys thereof.
摘要:
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.