公开(公告)号：US20070264441A1

公开(公告)日：2007-11-15

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C08F2/46 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

摘要翻译： 通过在利用微波的等离子体处理装置中，在支撑透射窗口的支撑部件与透射窗口之间的接触点附近抑制强电场和高密度等离子体的产生来提高处理质量。 在通过由微波供给产生的等离子体处理处理容器2中的晶片W的等离子体处理装置中，透光窗20在其下表面的中心区域具有由与 透气窗20的材料。在悬挂部分21的外周表面21a和从支撑部分6延伸的侧壁内表面5a之间形成间隙d，间隙d的间隙长度为0.5至 10mm，更优选为0.5〜5mm。 在接触点C处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片W的量也减少。

公开(公告)号：US08267040B2

公开(公告)日：2012-09-18

申请号：US10589272

申请日：2005-02-15

申请人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

发明人： Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Singo Furui ,  Cai Zhong Tian ,  Jun Yamashita ,  Nobuhiko Yamamoto ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Tamaki Yuasa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.

摘要翻译： 在通过供给微波产生的等离子体处理处理容器中的晶片的等离子体处理装置中，透光窗口在其下表面的中心区域具有由与材料相同的材料制成的悬挂部分 透光窗。 在悬挂部的外周面与从支撑部延续的侧壁内表面之间形成有间隙，间隙长度为0.5〜10mm，更优选为0.5〜5mm。 在接触点处产生强电场和等离子体被抑制，并且溅射的颗粒，自由基等到达晶片的量也减少。

公开(公告)号：US08387560B2

公开(公告)日：2013-03-05

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US20080035058A1

公开(公告)日：2008-02-14

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US07910495B2

公开(公告)日：2011-03-22

申请号：US12443589

申请日：2007-09-27

申请人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

发明人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/469

CPC分类号： H01L21/76229 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621

摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

摘要翻译： 等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤 向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤 由等离子体处理。

公开(公告)号：US20100015815A1

公开(公告)日：2010-01-21

申请号：US12443589

申请日：2007-09-27

申请人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

发明人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Hikaru Adachi ,  Junichi Kitagawa ,  Nobuhiko Yamamoto

IPC分类号： H01L21/31

CPC分类号： H01L21/76229 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621

摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

摘要翻译： 等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤 向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤 由等离子体处理。

公开(公告)号：US08852389B2

公开(公告)日：2014-10-07

申请号：US13233082

申请日：2011-09-15

申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192

摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。

公开(公告)号：US08882962B2

公开(公告)日：2014-11-11

申请号：US13075557

申请日：2011-03-30

申请人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

公开(公告)号：US20120067845A1

公开(公告)日：2012-03-22

申请号：US13233082

申请日：2011-09-15

申请人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

发明人： Taichi Monden ,  Junichi Kitagawa ,  Jun Yamashita ,  Hideo Nakamura

IPC分类号： H01L21/3065 ,  H01L21/306

CPC分类号： H01J37/32192

摘要： There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

摘要翻译： 提供了一种能够通过抑制等离子体电位的振荡来稳定地产生等离子体的等离子体处理装置，并且能够防止溅射由金属制成的面对电极引起的污染。 将高频偏置功率施加到用于在其上安装目标物体的安装台内的电极。 在盖构件27的内周面形成有延伸突起60.延伸突起60朝向等离子体产生空间S形成，并且用作与安装台5内的电极7对置的面对电极，其中等离子体产生空间S 之间。 面对电极的表面积相对于用于偏置的电极（面对电极表面积/偏置电极面积）的表面积的比率在约1至约5的范围内。

公开(公告)号：US20110174441A1

公开(公告)日：2011-07-21

申请号：US13075557

申请日：2011-03-30

申请人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。