公开(公告)号：US20180038003A1

公开(公告)日：2018-02-08

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong LEE ,  Young-Jin KO ,  Young Joon BAIK ,  Jong-Keuk PARK ,  Kyeong Seok LEE ,  Inho KIM ,  Doo Seok JEONG

IPC: C25B11/04 ,  C23C16/32 ,  C25B11/02

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US20230170017A1

公开(公告)日：2023-06-01

申请号：US17966305

申请日：2022-10-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaewook KIM ,  Kyu Sik MUN ,  Yeonjoo JEONG ,  Joon Young KWAK ,  Jongkil PARK ,  Suyoun LEE ,  Jong-Keuk PARK ,  Inho KIM ,  Seongsik PARK

IPC: G11C13/00

CPC classification number: G11C13/0038 ,  G11C13/0061

Abstract: The present disclosure relates to a nonlinearity compensation circuit for a memristive device. The circuit according to an embodiment includes at least one power source unit to apply an input pulse; a modulation unit connected to the at least one power source unit to adjust a pulse width of an update pulse to be applied to the memristive device; and the memristive device to which the modulated update pulse is applied.

公开(公告)号：US20160126376A1

公开(公告)日：2016-05-05

申请号：US14803843

申请日：2015-07-20

Applicant: Korea Institute of Science and Technology

Inventor： Jeung-hyun JEONG ,  Won Mok KIM ,  Jong-Keuk PARK

IPC: H01L31/0224 ,  H01L31/0445 ,  H01L31/0392 ,  H01L31/032 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0463 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for manufacturing a thin film solar cell includes: depositing a transparent first rear electrode on a first surface of a transparent substrate; depositing a second rear electrode having a high-conductive metal on the first rear electrode; performing a first laser scribing process to separate a double layer of the first and second rear electrodes; depositing a light absorption layer having selenium (Se) or sulfur (S) on the second rear electrode; performing a second laser scribing process by inputting a laser to a second surface of the transparent substrate to separate the light absorption layer; depositing a transparent electrode on the light absorption layer; and performing a third laser scribing process by inputting a laser to the second surface to separate the transparent electrode. Accordingly, patterning may be performed in a substrate-incident laser manner to improve price, productivity and precision of the patterning process.

Abstract translation: 一种制造薄膜太阳能电池的方法包括：在透明基板的第一表面上沉积透明的第一后电极; 在所述第一后电极上沉积具有高导电金属的第二后电极; 执行第一激光划线工艺以分离第一和第二后电极的双层; 在第二后电极上沉积具有硒（Se）或硫（S）的光吸收层; 通过将激光输入到所述透明基板的第二表面以分离所述光吸收层来执行第二激光划线处理; 在所述光吸收层上沉积透明电极; 以及通过将激光输入到所述第二表面以分离所述透明电极来执行第三激光划线处理。 因此，可以以基板入射激光的方式进行图案化，以提高图案化处理的价格，生产率和精度。

公开(公告)号：US20240172436A1

公开(公告)日：2024-05-23

申请号：US17990333

申请日：2022-11-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young KWAK ,  Minkyung KIM ,  Suyoun LEE ,  Inho KIM ,  Jong-Keuk PARK ,  Jaewook KIM ,  Jongkil PARK ,  YeonJoo JEONG

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A flash memory device including multi-layered oxide for neuromorphic computing system is disclosed. According to embodiments, the flash memory device includes: a substrate; a channel layer disposed on the substrate; source/drain patterns disposed on both ends of the channel layer; a tunneling insulating layer disposed on the channel layer; a trapping layer disposed on the tunneling insulating layer and including a plurality of nitride layers; an intermediate barrier layer interposed within the trapping layer, and including an oxide layer, the oxide layer having a high dielectric constant; a blocking insulating layer disposed on the trapping layer; and an upper gate disposed on the blocking insulating layer.

公开(公告)号：US20180108795A1

公开(公告)日：2018-04-19

申请号：US15705342

申请日：2017-09-15

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeung-Hyun JEONG ,  Jong-Keuk PARK ,  Won Mok KIM ,  Seung Hee HAN ,  Doh Kwon LEE

IPC: H01L31/0463 ,  H01L31/032 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0463 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/0468 ,  H01L31/1888 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided are a thin-film solar cell module structure and a method of manufacturing the same.

公开(公告)号：US20160221156A1

公开(公告)日：2016-08-04

申请号：US14970923

申请日：2015-12-16

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: B24D18/00 ,  C01B31/36

CPC classification number: B24D18/00 ,  C01B32/956

Abstract: A superhard boron carbide thin film with superior high temperature oxidation resistance has a structure in which a boron carbide layer and a silicon carbide layer are repeatedly stacked in an alternating manner. Accordingly, the high temperature oxidation resistance of the boron carbide thin film is enhanced, allowing the application as coating materials for wear resistant tools such as cutting tools.

Abstract translation: 具有优异的高温抗氧化性的超硬碳化硼薄膜具有以交替方式重复堆叠碳化硼层和碳化硅层的结构。 因此，提高了碳化硼薄膜的高温抗氧化性，可以作为耐磨工具如切削工具的涂料。

公开(公告)号：US20220138546A1

公开(公告)日：2022-05-05

申请号：US17205620

申请日：2021-03-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young KWAK ,  Suyoun LEE ,  Inho KIM ,  Jong-Keuk PARK ,  Kyeong Seok LEE ,  Jaewook KIM ,  Jongkil PARK ,  YeonJoo JEONG ,  Gyuweon HWANG

IPC: G06N3/063 ,  G06N3/04 ,  G11C11/54

Abstract: A neuromorphic circuit according to example embodiments of inventive concepts includes a first neuron array including a plurality of neuron circuits generating a spike signal; a first synapse array including a plurality of first synapse circuits to process and output the spike signal transmitted from the first neuron array; a second synapse array including a plurality of second synapse circuits; a first connecting block positioned between the first synapse array and the second synapse array and connecting the first synapse array and the second synapse array in response to a control signal; and a control logic to generate the control signal. The neuromorphic circuit may easily expand the size of the synapse element array to a desired size by using a connecting block.

公开(公告)号：US20140326319A1

公开(公告)日：2014-11-06

申请号：US13943088

申请日：2013-07-16

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Mok KIM ,  Jin-soo KIM ,  Jeung-hyun JEONG ,  Jong-Keuk PARK ,  Young Joon BAIK

IPC: H01L31/0224

CPC classification number: H01L31/022483 ,  H01L31/022466

Abstract: The present disclosure relates to a Se or S based thin film solar cell and a method for fabricating the same, which may improve the structural and electrical characteristics of an upper transparent electrode layer by controlling a structure of a lower transparent electrode layer in a thin film solar cell having a Se or S based light absorption layer. In the Se or S based thin film solar cell having a light absorption layer and a front transparent electrode layer, the front transparent electrode layer comprises a lower transparent electrode layer and an upper transparent electrode layer, and the lower transparent electrode layer comprises an oxide-based thin film obtained by blending an impurity element into a mixed oxide in which Zn oxide and Mg oxide are mixed (also, referred to as an ‘impurity-doped Zn—Mg-based oxide thin film’).

Abstract translation: 本发明涉及一种基于Se或S的薄膜太阳能电池及其制造方法，其可以通过控制薄膜中的下部透明电极层的结构来改善上部透明电极层的结构和电学特性 具有Se或S的光吸收层的太阳能电池。 在具有光吸收层和前透明电极层的Se或S基薄膜太阳能电池中，前透明电极层包括下透明电极层和上透明电极层，下透明电极层包括氧化物 - 通过将杂质元素混合到其中混合有Zn氧化物和Mg氧化物的混合氧化物（也称为“杂质掺杂的Zn-Mg基氧化物薄膜”）中获得的基于薄膜的薄膜。

公开(公告)号：US20140255286A1

公开(公告)日：2014-09-11

申请号：US13903309

申请日：2013-05-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Joon BAIK ,  Jong-Keuk PARK ,  Wook Seong LEE

IPC: C23C16/34

CPC classification number: C23C16/342 ,  C23C14/0647 ,  C23C14/345

Abstract: A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage.

Abstract translation: 立方氮化硼（c-BN）薄膜的制造方法包括：向基板施加脉冲型偏置电压; 以及通过使用脉冲型偏置电压用离子轰击衬底来形成立方氮化硼薄膜。 为了控制立方氮化硼薄膜的压缩残余应力，可以控制脉冲型偏置电压的ON / OFF时间比。 通过使用脉冲型电压作为施加到基板的负偏置电压，可以使施加到薄膜的压缩残余应力最小化。 此外，通过控制脉冲型电压的ON / OFF时间比，可以通过增加离子/中性粒子通量比，在低离子能量区域中进行c-BN薄膜的沉积。

公开(公告)号：US20220399353A1

公开(公告)日：2022-12-15

申请号：US17538747

申请日：2021-11-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young KWAK ,  Eunpyo PARK ,  Suyoun LEE ,  Inho KIM ,  Jong-Keuk PARK ,  Jaewook KIM ,  Jongkil PARK ,  YeonJoo JEONG

IPC: H01L27/11521 ,  H01L29/788 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66

Abstract: A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.