公开(公告)号：US20150228854A1

公开(公告)日：2015-08-13

申请号：US14694617

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong CHEN ,  Hsiu-Mei CHOU ,  Jhao-Cheng YE

IPC: H01L33/20 ,  H01L33/12

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

Abstract translation: 外延结构包括衬底，第一外延层和第二外延层。 衬底具有表面，并且第一外延层设置在衬底上并且限定多个阶梯式空气空隙和在每个阶梯式气隙上的开口。 第二外延层设置在第一外延层上并且共同地限定具有表面和第一外延层的阶梯空气空隙。

公开(公告)号：US20170148951A1

公开(公告)日：2017-05-25

申请号：US15428128

申请日：2017-02-08

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong CHEN ,  Hsiu-Mei CHOU ,  Jhao-Cheng YE

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.

公开(公告)号：US20130193448A1

公开(公告)日：2013-08-01

申请号：US13752370

申请日：2013-01-28

Applicant: Lextar Electronics Corporation

Inventor： Hsiu-Mei CHOU ,  Jun-Rong CHEN ,  Jhao-Cheng YE

IPC: H01L29/04 ,  H01L29/12 ,  H01L33/02 ,  H01L29/16

CPC classification number: H01L29/04 ,  C30B15/00 ,  C30B25/18 ,  C30B29/06 ,  H01L29/12 ,  H01L29/1608 ,  H01L33/007 ,  H01L33/02

Abstract: A patterned substrate is provided, including: a substrate having a (0001) crystal plane and a plurality of alternatively arranged recess structures therein, thereby forming a plurality of alternatively arranged top surfaces; and a dielectric barrier layer covering the bottom surface and/or the sidewalls of the recess structures. Each of the alternatively arranged recess structures includes a bottom surface and a plurality of sidewalls surrounding the bottom surface.

Abstract translation: 提供了一种图案化衬底，包括：具有（0001）晶面的衬底和其中的多个交替布置的凹陷结构，由此形成多个可替代布置的顶表面; 以及覆盖凹部结构的底表面和/或侧壁的介电阻挡层。 每个备选布置的凹陷结构包括底表面和围绕底表面的多个侧壁。

公开(公告)号：US20220310894A1

公开(公告)日：2022-09-29

申请号：US17655174

申请日：2022-03-17

Applicant: Lextar Electronics Corporation

Inventor： Hsin-Chuan WANG ,  Tzong-Liang TSAI ,  Hsiu-Mei CHOU ,  Chin-Hung LUO

IPC: H01L33/62 ,  H01L33/32

Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.

公开(公告)号：US20170154769A1

公开(公告)日：2017-06-01

申请号：US15428416

申请日：2017-02-09

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong CHEN ,  Hsiu-Mei CHOU ,  Jhao-Cheng YE

IPC: H01L21/02 ,  H01L33/20 ,  H01L33/32 ,  C30B29/66 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

公开(公告)号：US20150228853A1

公开(公告)日：2015-08-13

申请号：US14694602

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong CHEN ,  Hsiu-Mei CHOU ,  Jhao-Cheng YE

IPC: H01L33/20 ,  H01L33/12

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

Abstract translation: 外延结构包括衬底，第一外延层和第二外延层。 衬底具有表面，并且第一外延层设置在衬底上并且限定多个倾斜的空气空隙，其从衬底逐渐变细并且在每个倾斜空气空隙上开口。 第二外延层设置在第一外延层上，并且与表面和第一外延层共同地限定呈梯形形状的倾斜空气空隙。

公开(公告)号：US20150214431A1

公开(公告)日：2015-07-30

申请号：US14298826

申请日：2014-06-06

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Hsiu-Mei CHOU ,  Jui-Yi CHU ,  Cheng-Ta KUO

IPC: H01L33/22 ,  H01L33/02 ,  H01L33/06

CPC classification number: H01L33/145 ,  H01L21/2654 ,  H01L21/26586 ,  H01L29/34 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

Abstract: The invention provides a light-emitting diode device and a method for fabricating the same. The light-emitting diode device includes a metal substrate. A light-emitting diode structure is bonded on the metal substrate. The light-emitting diode structure includes a first type semiconductor substrate and a second type semiconductor layer. The first type semiconductor layer has a first surface and a second surface opposite to the first surface. The second type semiconductor layer is in contact with the metal substrate. A light-emitting layer is disposed between the first type semiconductor substrate and the second type semiconductor layer. A portion of the second surface and a sidewall adjacent to the second surface are uneven roughened surfaces.

Abstract translation: 本发明提供一种发光二极管装置及其制造方法。 发光二极管装置包括金属基板。 发光二极管结构结合在金属基板上。 发光二极管结构包括第一类型半导体衬底和第二类型半导体层。 第一类型半导体层具有与第一表面相对的第一表面和第二表面。 第二类型半导体层与金属基板接触。 发光层设置在第一类型半导体衬底和第二类型半导体层之间。 第二表面的一部分和与第二表面相邻的侧壁是不均匀的粗糙表面。