公开(公告)号：US20170229311A1

公开(公告)日：2017-08-10

申请号：US15421189

申请日：2017-01-31

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Yiting Zhang ,  Ying Wu ,  Qing Xu ,  Qian Fu ,  Yoko Yamaguchi ,  Lin Cui

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  C23C16/52 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/455 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/3065 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3085 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6833

Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

公开(公告)号：US09991128B2

公开(公告)日：2018-06-05

申请号：US15421189

申请日：2017-01-31

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Yiting Zhang ,  Ying Wu ,  Qing Xu ,  Qian Fu ,  Yoko Yamaguchi ,  Lin Cui

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  C23C16/52 ,  H01L21/311 ,  C23C16/455 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/683

CPC classification number: H01L21/3065 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32926 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/3085 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6833

Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

公开(公告)号：US20160300713A1

公开(公告)日：2016-10-13

申请号：US14683022

申请日：2015-04-09

Applicant: Lam Research Corporation

Inventor： Lin Cui ,  Jason Daejin Park

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/455 ,  C23C16/4404 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/505 ,  C23C16/52

Abstract: Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.

Abstract translation: 提供了使用涉及低偏压和高偏压级的两级工艺调节室的方法和装置。 方法还涉及通过在高偏压阶段期间向静电卡盘施加偏压而将保护性静电卡盘盖固定到基座上，同时例如通过将氦气流到盖的背面来冷却保护性静电卡盘盖。

公开(公告)号：US10023956B2

公开(公告)日：2018-07-17

申请号：US14683022

申请日：2015-04-09

Applicant: Lam Research Corporation

Inventor： Lin Cui ,  Jason Daejin Park

IPC: H01L21/76 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.

公开(公告)号：US10020183B1

公开(公告)日：2018-07-10

申请号：US15637828

申请日：2017-06-29

Applicant: Lam Research Corporation

Inventor： Yansha Jin ,  Zhongkui Tan ,  Lin Cui ,  Qian Fu ,  Martin Shim

IPC: H01L21/02 ,  H01L21/302

CPC classification number: H01L21/02021 ,  H01L21/02019 ,  H01L21/02035 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/0338 ,  H01L21/302 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method for processing a stack with an etch layer below a mask is provided. The mask is treated by flowing a treatment gas, wherein the treatment gas comprises a sputtering gas and a trimming gas, providing pulsed TCP power to create a plasma from the treatment gas, and providing a pulsed bias, wherein the pulsed bias has a same period as the pulsed TCP power, wherein the pulsed TCP power and pulsed bias provide a first state with a first bias above a sputter threshold and a first TCP power, which causes species from the sputtering gas to sputter and redeposit material from the mask, and provide a second state with a second bias below the sputter threshold and a second TCP power, wherein the second TCP power is greater than the first TCP power, which causes species from the trimming gas to chemically trim the mask.