公开(公告)号：US20200020825A1

公开(公告)日：2020-01-16

申请号：US16447050

申请日：2019-06-20

Applicant: Long Yang ,  Chao-Kun Lin

Inventor： Long Yang ,  Chao-Kun Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/16 ,  H01L33/62 ,  H01L33/40 ,  H01L33/30

Abstract: Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.

公开(公告)号：US20130082274A1

公开(公告)日：2013-04-04

申请号：US13249157

申请日：2011-09-29

Applicant: Long Yang ,  Will Fenwick

Inventor： Long Yang ,  Will Fenwick

IPC: H01L33/30 ,  B05C11/00 ,  B05C13/00 ,  H01L33/12

CPC classification number: H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.

公开(公告)号：US20120091920A1

公开(公告)日：2012-04-19

申请号：US13084336

申请日：2011-04-11

Applicant: Long Yang

Inventor： Long Yang

IPC: H05B37/00

CPC classification number: H05B33/0824

Abstract: A light source and method for operating a light source are disclosed. The present invention includes a light source and method for using the same. The light source includes a power coupler, a reconfigurable two-dimensional LED array and a controller. The power coupler is configured to receive a power potential that varies as a function of time. The LED array has a plurality of configurations of LEDs, each configuration being characterized by a minimum bias potential and a maximum bias potential. The LED array generates light when a potential between first and second power terminals is greater than the minimum bias potential. The controller varies the configuration of the array such that the power potential remains between the minimum and maximum bias potentials as the power potential varies.

Abstract translation: 公开了一种用于操作光源的光源和方法。 本发明包括光源及其使用方法。 光源包括功率耦合器，可重新配置的二维LED阵列和控制器。 功率耦合器配置为接收随时间变化而变化的功率电位。 LED阵列具有多个配置的LED，每个配置的特征在于最小偏置电位和最大偏置电位。 当第一和第二电源端子之间的电位大于最小偏置电位时，LED阵列产生光。 控制器改变阵列的配置，使得当功率电位变化时，功率电位保持在最小和最大偏置电位之间。

公开(公告)号：US07539371B2

公开(公告)日：2009-05-26

申请号：US12107014

申请日：2008-04-21

Applicant: Massimo Martinelli ,  Long Yang ,  Mark H. Garrett ,  Robert Ostrom ,  Joseph E. Davis

Inventor： Massimo Martinelli ,  Long Yang ,  Mark H. Garrett ,  Robert Ostrom ,  Joseph E. Davis

IPC: G02B6/26

CPC classification number: G02B6/29311 ,  G02B6/29383 ,  G02B6/352 ,  G02B6/356 ,  G02B6/3594 ,  G02B6/4246 ,  G02B26/0833 ,  G02B27/0911

Abstract: A micromirror for use in an optical apparatus may comprise a reflective portion, configured to be rotatable about a switching axis and an attenuation axis that is different from the switching axis. The reflective portion may include an edge that is substantially parallel to the attenuation axis. The edge may include one or more edge features that protrude above a plane of the micromirror surface and/or are submerged below the plane of the micromirror surface, and/or have an edge shape that deviates from a straight line. Alternatively, an array of micromirrors may have mirrors characterized by sawtooth features disposed along edges that are substantially parallel to the attenuation axis.

Abstract translation: 用于光学设备的微反射镜可以包括反射部分，其被配置为围绕开关轴线可旋转，并且衰减轴线与切换轴线不同。 反射部分可以包括基本上平行于衰减轴线的边缘。 边缘可以包括突出在微镜表面的平面上方和/或被浸没在微反射镜表面的平面之下的一个或多个边缘特征，和/或具有偏离直线的边缘形状。 或者，微镜阵列可以具有以沿着基本上平行于衰减轴线的边缘设置的锯齿形特征的反射镜。

公开(公告)号：US06678445B2

公开(公告)日：2004-01-13

申请号：US09727446

申请日：2000-12-04

Applicant: W. John Tomlinson ,  Valentine N. Morozov ,  Yevgeniy Churin ,  Brian Lee Heffner ,  Long Yang ,  Jinxi Shen

Inventor： W. John Tomlinson ,  Valentine N. Morozov ,  Yevgeniy Churin ,  Brian Lee Heffner ,  Long Yang ,  Jinxi Shen

IPC: G02B634

CPC classification number: G02B6/2931 ,  G02B6/29391

Abstract: A dynamic gain flattening filter is provided that offers a smooth spectral response. The filter includes an input/output port for launching a beam of light, a dispersive element for dispersing the beam of light into a plurality of monochromatic sub-beams of light, and discrete array of controllable elements for receiving the plurality of sub-beams of light. The filter is designed such that each sub-beam of light is incident on more than one element of the discrete array for selective attenuation before being recombined by the dispersive element and redirected back to the input/output port. In another embodiment, a beam-folding mirror is provided to direct the attenuated beam to a separate output port.

Abstract translation: 提供了一种提供平滑光谱响应的动态增益平坦化滤波器。 滤波器包括用于发射光束的输入/输出端口，用于将光束分散成多个单色子光束的分散元件，以及用于接收多个子光束的可控元件的离散阵列 光。 滤波器被设计成使得每个子光束入射到离散阵列的多于一个元件上，用于选择性衰减，然后由分散元件重组并重定向回到输入/输出端口。 在另一个实施例中，提供了一个光束折叠镜以将衰减的光束引导到单独的输出端口。

公开(公告)号：US06277696B1

公开(公告)日：2001-08-21

申请号：US08751038

申请日：1996-11-15

Applicant: Kent W. Carey ,  Long Yang ,  John E. Bowers ,  Dubravko I. Babic ,  James J. Dudley

Inventor： Kent W. Carey ,  Long Yang ,  John E. Bowers ,  Dubravko I. Babic ,  James J. Dudley

IPC: H01L2120

CPC classification number: H01S5/1838 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/2063

Abstract: The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.

Abstract translation: 本发明提供一种在所需波长范围内具有高增益和高反射率的垂直腔表面发射激光器以及良好的导热和导热性。 激光器结构由第一反射镜区域，第二反射镜区域和位于第一和第二镜像区域之间的有源区域组成。 与先前的VCSEL不同，有源区域融合到第一镜像区域和第二镜像区域两者。 这允许激光设计者通过允许为第一镜面区域，第二镜面区域和有源区域选择不同的材料来优化所需波长范围的激光器性能。

公开(公告)号：US5805624A

公开(公告)日：1998-09-08

申请号：US688338

申请日：1996-07-30

Applicant: Long Yang ,  Danny E. Mars

Inventor： Long Yang ,  Danny E. Mars

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19 ,  H01S3/08

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S2302/00 ,  H01S5/2063 ,  H01S5/3095 ,  H01S5/32366 ,  H01S5/34306

Abstract: A vertical cavity surface emitting laser (VCSEL) that generates light having a desired wavelength, greater than one micron. The laser comprises a substrate, a lower mirror region, an active region and an upper mirror region. The substrate consists essentially of GaAs. The lower mirror region is adjacent the substrate and is lattice matched to the substrate. The active region is sandwiched between the upper and lower mirror regions, and includes a central quantum well region and a gallium arsenide layer sandwiched between the quantum well region and each of the lower mirror region and the upper mirror region. The central quantum well region includes a quantum well layer consisting essentially of GaN.sub.x As.sub.(1-x). The GaN.sub.x As.sub.(1-x) of the quantum well layer has a lattice constant and a band gap dependent on x. The value of x sets the bandgap of the GaN.sub.x As.sub.(1-x) of the quantum well layer to a value corresponding to light generation at the desired wavelength, greater than one micron. Each gallium arsenide layer is a layer of a material consisting essentially of GaAs or AlGaAs, and is lattice matched to the substrate. The quantum well layer may additionally include a fraction of indium to lattice match the quantum well layer to the substrate.

Abstract translation: 垂直腔表面发射激光器（VCSEL），其产生具有大于1微米的期望波长的光。 激光器包括基板，下反射镜区域，有源区域和上反射镜区域。 衬底基本上由GaAs组成。 下反射镜区域与衬底相邻并且与衬底晶格匹配。 有源区域夹在上镜面区域和下镜面区域之间，并且包括夹在量子阱区域和下反射镜区域和上镜面区域中的每一个的中心量子阱区域和砷化镓层。 中心量子阱区包括基本上由GaN xAs​​（1-x）组成的量子阱层。 量子阱层的GaN xAs​​（1-x）具有晶格常数和取决于x的带隙。 x的值将量子阱层的GaN xAs​​（1-x）的带隙设置为对应于大于1微米的期望波长的光产生的值。 每个砷化镓层是基本上由GaAs或AlGaAs组成的材料层，并且与衬底晶格匹配。 量子阱层可以另外包括铟的一部分以将量子阱层与衬底进行晶格匹配。

公开(公告)号：US5528724A

公开(公告)日：1996-06-18

申请号：US404688

申请日：1995-03-15

Applicant: Kok-Wai Chang ,  Long Yang

Inventor： Kok-Wai Chang ,  Long Yang

IPC: G02B6/24 ,  B81B1/00 ,  G02B6/12 ,  G02B6/26 ,  G02B6/28 ,  G02B6/32 ,  G02B6/34 ,  G02B6/36 ,  G02B6/42 ,  G02F1/35 ,  G02B6/38

CPC classification number: G02B6/32 ,  G02B6/2817 ,  G02B2006/12164 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/3692 ,  G02B6/4246

Abstract: An apparatus for aligning a plurality of optical fibers in predetermined positions with respect to one another. The apparatus includes a top plate and a bottom plate having a first set of alignment groves therein, there being one such grove corresponding to each optical fiber. The alignment groves are positioned such that the optical fibers will be in their correct positions with respect to one another when the optical fibers are forced against the bottom of the groves by the top plate. To reduce reflections from cut fiber ends that would normally be cut and polished, the optical fibers are cut at an angle with respect to the axis of the optical fiber and the cut end is bonded to an optical flat by a glue layer having the same index of refraction as the optical fiber. In the preferred embodiment of the present invention, the optical flat also includes an anti-reflective material on the non-glued surface thereof. The bottom plate is preferably fabricated using photolithographic etching techniques similar to those used in micro-machining and integrated circuit fabrication. This allows the bottom plates to be mass produced while maintaining the tight tolerances need for high light collection efficiencies. Various optical components can also be mounted on the bottom plates in groves with the aid of further groves in the bottom plates.

Abstract translation: 一种用于将多根光纤相对于彼此预定位置对准的装置。 该装置包括顶板和底板，其中具有第一组对准槽，存在一个对应于每个光纤的这种槽。 对准格子被定位成使得当光纤通过顶板被迫抵靠格子的底部时，光纤将相对于彼此处于它们的正确位置。 为了减少通常被切割和抛光的切割的纤维端部的反射，光纤相对于光纤的轴线成一定角度切割，并且切割端通过具有相同指数的胶层粘合到光学平面 的折射率作为光纤。 在本发明的优选实施例中，光学平面还包括在其非胶合表面上的抗反射材料。 底板优选使用类似于在微加工和集成电路制造中使用的光刻蚀技术来制造。 这允许底板大量生产，同时保持严格的公差需要高的光采集效率。 借助于底板中的进一步的格栅，各种光学元件也可以安装在圆盘的底板上。

公开(公告)号：US09142743B2

公开(公告)日：2015-09-22

申请号：US13196839

申请日：2011-08-02

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/40 ,  H01L23/00

CPC classification number: H01L33/62 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/05624 ,  H01L2224/29118 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/0665 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract translation: 通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。 添加银层并退火以承受> 450℃的温度。 提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。 然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。 与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。 芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。 整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

公开(公告)号：US20060015610A1

公开(公告)日：2006-01-19

申请号：US10892850

申请日：2004-07-16

Applicant: Long Yang ,  Xiao-Hui Jiang

Inventor： Long Yang ,  Xiao-Hui Jiang

IPC: G06F15/173

CPC classification number: H04L12/14 ,  H04L12/1439 ,  H04L43/0876 ,  H04L67/22

Abstract: The present invention provides a gateway for network communication, comprising: a processor and a monitoring means coupled to the processor for accounting on-line time and fee of a network user. A simple network time protocol (SNTP) is coupled to the monitoring means for providing time information. A WAN module is couples to the monitoring means for WAN connection and maintains WAN status information. A data storage is coupled to the monitoring means to save current consumed time and information into the data storage.

Abstract translation: 本发明提供了一种用于网络通信的网关，包括：处理器和耦合到所述处理器的监视装置，用于计算网络用户的在线时间和费用。 简单的网络时间协议（SNTP）被耦合到监视装置以提供时间信息。 WAN模块耦合到用于WAN连接的监控装置，并维护WAN状态信息。 数据存储器耦合到监视装置以将当前消耗的时间和信息节省到数据存储器中。