公开(公告)号：US10995417B2

公开(公告)日：2021-05-04

申请号：US15739314

申请日：2016-06-30

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US11697884B2

公开(公告)日：2023-07-11

申请号：US17400633

申请日：2021-08-12

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00 ,  C25D7/12

CPC classification number: C25D3/38 ,  C08G65/24 ,  C08G65/33317 ,  C08G73/0627 ,  H01L24/11 ,  C25D7/123 ,  H01L2224/11462 ,  H01L2924/01029 ,  H01L2924/3656

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：USRE49202E1

公开(公告)日：2022-09-06

申请号：US16030344

申请日：2018-07-09

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

IPC: H01L21/4763 ,  H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/768

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

公开(公告)号：US11124888B2

公开(公告)日：2021-09-21

申请号：US16334098

申请日：2017-09-20

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C25D7/12 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US20190390356A1

公开(公告)日：2019-12-26

申请号：US16334168

申请日：2017-09-21

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US10519557B2

公开(公告)日：2019-12-31

申请号：US15412809

申请日：2017-01-23

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  C08G65/333 ,  H05K3/18 ,  H05K3/42 ,  C25D7/12 ,  C08G65/24 ,  C08L71/03 ,  H01L21/768 ,  H01L21/48 ,  H01L21/288

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

公开(公告)号：US11035048B2

公开(公告)日：2021-06-15

申请号：US15641756

申请日：2017-07-05

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  Shaopeng Sun ,  Eric Yakobson ,  Jianwen Han ,  Elie Najjar

IPC: C25D3/16 ,  H01L21/768 ,  C25D5/02 ,  C25D7/12 ,  H01L21/288 ,  C25D3/18 ,  C25D7/00

Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

公开(公告)号：US10294574B2

公开(公告)日：2019-05-21

申请号：US14854561

申请日：2015-09-15

Applicant: MacDermid Enthone Inc.

Inventor： Kyle Whitten ,  Vincent Paneccasio, Jr. ,  Thomas Richardson ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.

公开(公告)号：US11434578B2

公开(公告)日：2022-09-06

申请号：US17220540

申请日：2021-04-01

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20220064811A1

公开(公告)日：2022-03-03

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  H01L21/768 ,  H01L21/288 ,  C25D7/12 ,  C25D5/02 ,  C25D21/10

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.