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57 条记录 (耗时 0.025 秒)

    Semiconductor memory device and manufacturing method thereof
    1.
    发明申请
    Semiconductor memory device and manufacturing method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20060060912A1

    公开(公告)日：2006-03-23

    申请号：US11247328

    申请日：2005-10-12

    申请人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    发明人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  G11C16/0475 ,  H01L29/7887

    摘要： A polysilicon film and the like are patterned to form n-diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3 film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3 film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3 film, enabling almost exclusive etching of the Al2O3 film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3 film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

    摘要翻译： 图案化多晶硅膜等，以在硅衬底上形成n扩散层。 随后，通过对Al 2 O 3膜进行各向同性蚀刻，使Al 2 O 3膜的外边缘退回到小于栅电极的外边缘， 使用硫酸与过氧化氢的溶液进行反应。 尽管硫酸与过氧化氢的溶液表现出较高的蚀刻速率，但是Al 2 O 3 O 3不能除去氧化硅膜，氮化硅膜，多晶硅膜等， SUB>膜，使得能够以高选择比几乎独特地蚀刻Al 2 O 3膜。 随后，形成另外的多晶硅膜，以填充氧化硅膜下的Al 2 O 3 N 3膜后退形成的空间。 随后，通过进行稍后多晶硅膜的RIE，氧化等，在剩余的多晶硅膜的剩余部分中形成侧壁绝缘膜。

    Semiconductor memory device and manufacturing method thereof
    2.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权

    公开(公告)号：US06987297B2

    公开(公告)日：2006-01-17

    申请号：US10768188

    申请日：2004-02-02

    申请人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    发明人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  G11C16/0475 ,  H01L29/7887

    摘要： A polysilicon film and the like are patterned to form n− diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3 film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3 film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3 film, enabling almost exclusive etching of the Al2O3 film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3 film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

    Semiconductor memory device and manufacturing method thereof
    3.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权
    半导体存储器件及其制造方法

    公开(公告)号：US07132332B2

    公开(公告)日：2006-11-07

    申请号：US11247328

    申请日：2005-10-12

    申请人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    发明人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    IPC分类号： H01L21/8238 ,  H01L21/336

    CPC分类号： H01L21/28273 ,  G11C16/0475 ,  H01L29/7887

    摘要： A polysilicon film and the like are patterned to form n− diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3 film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3 film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3 film, enabling almost exclusive etching of the Al2O3 film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3 film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

    摘要翻译： 图案化多晶硅膜等以在硅衬底上形成n + - 扩散层。 随后，通过对Al 2 O 3膜进行各向同性腐蚀，使Al 2 O 3膜的外边缘退缩至小于栅电极的外边缘， 使用硫酸与过氧化氢的溶液进行反应。 尽管硫酸与过氧化氢的溶液表现出较高的蚀刻速率，但是Al 2 O 3 O 3不能除去氧化硅膜，氮化硅膜，多晶硅膜等， SUB>膜，使得能够以高选择比几乎独特地蚀刻Al 2 O 3膜。 随后，形成另外的多晶硅膜，以填充氧化硅膜下的Al 2 O 3 N 3膜后退形成的空间。 随后，通过进行稍后多晶硅膜的RIE，氧化等，在剩余的多晶硅膜的剩余部分中形成侧壁绝缘膜。

    Dental burr and dental handpiece
    8.
    发明授权
    Dental burr and dental handpiece 失效
    牙科毛刺和牙科手机

    公开(公告)号：US5022857A

    公开(公告)日：1991-06-11

    申请号：US287116

    申请日：1988-12-21

    申请人： Kanji Matsutani ,  Masatoshi Fukuda

    发明人： Kanji Matsutani ,  Masatoshi Fukuda

    IPC分类号： A61C1/05 ,  A61C1/14 ,  A61C3/02

    CPC分类号： A61C3/02 ,  A61C1/055 ,  A61C1/141

    摘要： A dental burr has an axis of rotation and a cooling water passage extending therethrough in coaxial relation to the dental burr. The cooling water passage opens to a front end face of the dental burr, and this opening in the front end of the dental burr is disposed in an area including the axis of rotation of the dental burr. A dental handpiece for rotatably holding a dental burr includes a handgrip portion, a hollow head portion provided at a front end of the handgrip portion, and a cooling water passage. This cooling water passage extends along the handgrip portion,and opens at one end to a rear end of the handgrip portion while the other end thereof is connected to an internal space of the head portion. Part of the internal space serves as a passage for communicating the cooling water passage of the dental handpiece with the cooling water passage of the dental burr held by the dental handpiece.

    Medical Suture Needle
    9.
    发明申请
    Medical Suture Needle 审中-公开
    医用缝线针

    公开(公告)号：US20160022264A1

    公开(公告)日：2016-01-28

    申请号：US12810547

    申请日：2008-12-24

    申请人： Masaaki Matsutani ,  Shouichi Fukuda ,  Masatoshi Fukuda ,  Shinichi Akutsu ,  Kazuaki Kato ,  Shinichi Yano

    发明人： Masaaki Matsutani ,  Shouichi Fukuda ,  Masatoshi Fukuda ,  Shinichi Akutsu ,  Kazuaki Kato ,  Shinichi Yano

    IPC分类号： A61B17/06

    CPC分类号： A61B17/06004 ,  A61B17/06066 ,  A61B2017/06028 ,  A61B2017/06033

    摘要： The problem that a metal wire joined integrally to a hole formed in a proximal end face of a medical suture needle is susceptible to bending damage is reduced.A suture needle A has a blind hole 5 which is formed in a proximal end face 3, inserts the end of a wire 10 thereinto, and joins the wire 10 thereto by caulking, and a counterbore 6 which is formed on the proximal end face 3 side of the blind hole 5 and has a dimension D at least in the proximal end face 3 larger than a dimension d of the blind hole 5 and a depth L smaller than a depth of a caulked portion with respect to the blind hole 5. A suture needle with wire inserts the end of the wire 10 into the blind hole 5 to caulk the outer circumference of the suture needle corresponding to the blind hole 5, thereby integrally joins the wire 10 thereto.

    摘要翻译： 与形成在医用缝合针的基端面上的孔整体接合的金属丝容易受到弯曲损伤的问题减少。 缝合针A具有形成在基端面3上的盲孔5，将线10的端部插入其中，并且通过铆接将线10接合到其上，并且形成在基端面3上的沉孔6 并且具有至少在近端面3中的尺寸D大于盲孔5的尺寸d，并且具有小于相对于盲孔5的铆接部的深度的深度L. 具有线的缝合针将线10的端部插入盲孔5中以堵塞与盲孔5相对应的缝合针的外周，从而将线10一体地连接到其上。