公开(公告)号：US20050145265A1

公开(公告)日：2005-07-07

申请号：US10882835

申请日：2004-06-30

申请人： Michael Ravkin ,  Michael Smith ,  John de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

发明人： Michael Ravkin ,  Michael Smith ,  John de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

IPC分类号： B08B3/00 ,  B08B3/04 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

摘要翻译： 在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。 该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体 通过真空。 流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

公开(公告)号：US20080230097A1

公开(公告)日：2008-09-25

申请号：US12129679

申请日：2008-05-30

申请人： Michael Ravkin ,  Michael G.R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

发明人： Michael Ravkin ,  Michael G.R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

IPC分类号： B08B3/08 ,  B05D1/00 ,  C23F1/00

CPC分类号： H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

摘要翻译： 在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。 该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体 通过真空。 流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

公开(公告)号：US07534307B2

公开(公告)日：2009-05-19

申请号：US12129679

申请日：2008-05-30

申请人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

发明人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

IPC分类号： B08B5/04 ,  B08B3/04

CPC分类号： H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

摘要翻译： 在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。 该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体 通过真空。 流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

公开(公告)号：US07383843B2

公开(公告)日：2008-06-10

申请号：US10882835

申请日：2004-06-30

申请人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

发明人： Michael Ravkin ,  Michael G. R. Smith ,  John M. de Larios ,  Fritz Redeker ,  Mikhail Korolik ,  Christian DiPietro

IPC分类号： B08B3/00 ,  F26B5/04

CPC分类号： H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

摘要翻译： 在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。 该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体 通过真空。 流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

公开(公告)号：US20070087950A1

公开(公告)日：2007-04-19

申请号：US11519354

申请日：2006-09-11

申请人： Mikhail Korolik ,  Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

发明人： Mikhail Korolik ,  Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Mike Ravkin ,  Fritz Redeker

IPC分类号： B08B3/00 ,  B08B7/00 ,  C11D7/32

CPC分类号： C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

摘要： Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.

摘要翻译： 提供了清除化合物，设备和从基材表面除去污染物的方法。 提供了从半导体衬底表面去除颗粒污染物的示例性清洁化合物。 清洁化合物包括粘度在约1cP至约10,000cP之间的粘性液体。 清洁化合物还包括分散在粘性液体中的多个固体组分，多个固体组分与基底表面上的颗粒污染物相互作用以从基底表面去除颗粒污染物。

公开(公告)号：US20060128600A1

公开(公告)日：2006-06-15

申请号：US11347154

申请日：2006-02-03

申请人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker

发明人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker

IPC分类号： B08B3/02 ,  C11D3/20

CPC分类号： H01L21/02052 ,  B08B7/02 ,  C11D3/2079 ,  C11D9/02 ,  C11D9/26 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/425 ,  G03F7/426 ,  H05K3/26

摘要： A cleaning compound is provided. The cleaning compound includes about 0.1 weight percent to about 10 weight percent of a fatty acid dispersed in water. The cleaning compound includes an amount of a base sufficient to bring a pH of the fatty acid water solution to about a level where above about 50% of the dispersed fatty acid is ionized. A method for cleaning a substrate, a system for cleaning a substrate, and a cleaning solution prepared by a process are also provided.

摘要翻译： 提供清洁化合物。 清洁化合物包括分散在水中的约0.1重量％至约10重量％的脂肪酸​​。 清洁化合物包括一定量的足以使脂肪酸水溶液的pH达到大约50％的分散脂肪酸被离子化的水平的碱。 还提供了清洁基板的方法，用于清洁基板的系统以及通过工艺制备的清洁溶液。

公开(公告)号：US08691027B2

公开(公告)日：2014-04-08

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/00 ,  B08B7/00 ,  B08B7/04 ,  H01L21/67

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US20070079848A1

公开(公告)日：2007-04-12

申请号：US11336215

申请日：2006-01-20

申请人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker ,  Clint Thomas ,  John Parks

发明人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker ,  Clint Thomas ,  John Parks

IPC分类号： C23G1/00 ,  B08B7/00 ,  B08B7/04 ,  B08B3/00 ,  B08B3/12

CPC分类号： H01L21/02057 ,  B05D3/10 ,  B08B7/02 ,  C11D1/04 ,  C11D3/042 ,  C11D3/044 ,  C11D3/18 ,  C11D3/2079 ,  C11D3/222 ,  C11D3/225 ,  C11D3/3765 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0004 ,  C11D17/0013 ,  C11D17/0017 ,  C11D17/003 ,  C11D17/041 ,  C23G1/00 ,  C23G1/18 ,  G03F7/42 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  H01L21/67086

摘要： A cleaning material is disposed over a substrate. The cleaning material includes solid components dispersed within a liquid medium. A force is applied to the solid components within the liquid medium to bring the solid components within proximity to contaminants present on the substrate. The force applied to the solid components can be exerted by an immiscible component within the liquid medium. When the solid components are brought within sufficient proximity to the contaminants, an interaction is established between the solid components and the contaminants. Then, the solid components are moved away from the substrate such that the contaminants having interacted with the solid components are removed from the substrate.

摘要翻译： 清洁材料设置在基板上。 清洁材料包括分散在液体介质中的固体组分。 将力施加到液体介质中的固体组分以使固体组分接近存在于基底上的污染物。 施加到固体组分的力可以通过液体介质中的不混溶组分施加。 当固体组分被充分接近污染物时，在固体组分和污染物之间建立了相互作用。 然后，将固体组分从衬底移开，使得与固体组分相互作用的污染物从衬底上除去。

公开(公告)号：US20060128590A1

公开(公告)日：2006-06-15

申请号：US11346894

申请日：2006-02-03

申请人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker

发明人： Erik Freer ,  John de Larios ,  Katrina Mikhaylichenko ,  Michael Ravkin ,  Mikhail Korolik ,  Fred Redeker

IPC分类号： C23G1/00 ,  B08B5/04 ,  B08B3/00 ,  C11D17/00

CPC分类号： H01L21/02052 ,  B08B7/02 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/42 ,  H01L21/02057 ,  H01L21/02096

摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

公开(公告)号：US20070000518A1

公开(公告)日：2007-01-04

申请号：US11174080

申请日：2005-06-30

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。