公开(公告)号：US20150372196A1

公开(公告)日：2015-12-24

申请号：US14842228

申请日：2015-09-01

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: The light emitting element including: a semiconductor laminate including a first layer, an active layer and a second layer; a first electrode including protrusions that penetrate the second layer and the active layer, the first electrode connected to the first layer via the protrusions; a second electrode connected to the second layer on an lower face of the second layer; and an insulation film between the protrusions and the semiconductor laminate, wherein the protrusions each include a protrusion body covered with the insulation film and a protrusion tip, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first layer includes recesses arranged on an upper face of the first layer so as to sandwich first areas located above the respective the protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip.

Abstract translation: 发光元件包括：包括第一层，有源层和第二层的半导体层叠体; 包括穿透所述第二层和所述有源层的突起的第一电极，所述第一电极经由所述突起连接到所述第一层; 在所述第二层的下表面上连接到所述第二层的第二电极; 以及在所述突起和所述半导体层叠体之间的绝缘膜，其中，所述突起各自包括被所述绝缘膜覆盖的突起体和突出尖端，所述突起尖端的上表面和侧面从所述绝缘膜露出，所述第一 层包括布置在第一层的上表面上的凹部，以便夹住位于相应突起之上的第一区域，并且夹住第一区域的凹部之间的距离大于突起末端的宽度。

公开(公告)号：US20160005928A1

公开(公告)日：2016-01-07

申请号：US14851821

申请日：2015-09-11

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/387 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove.

Abstract translation: 为了提供具有高发光效率的半导体发光元件，发光元件包括：基板; 放置在所述基板上方的半导体层叠体，所述半导体层叠体包含从所述基板依次层叠的第二半导体层，有源层和第一半导体层; 以及设置在所述基板和所述半导体层叠体之间的第一电极和第二电极，其中，所述半导体层叠体通过凹槽被分割成多个半导体块，其中所述第一电极包括设置在所述多个半导体块中的每一个中的突起 并且穿透第二半导体层和要连接到第一半导体层的有源层，并且其中第二电极连接到多个半导体块中的每一个中的第二半导体层，并且具有暴露在第一半导体层上的外部连接器 凹槽底部

公开(公告)号：US20140024150A1

公开(公告)日：2014-01-23

申请号：US13944130

申请日：2013-07-17

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA ,  Takashi ABE ,  Kyosuke NAKAGAWA

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor light emitting element includes preparing a semiconductor stacked layer structure by stacking a first semiconductor layer and a second semiconductor layer in this order, forming a second electrode and an insulating layer in this order on the second semiconductor layer, exposing the first semiconductor layer by removing a part of the second semiconductor layer, forming a first electrode by forming a metal layer on the exposed first semiconductor layer and the insulating layer and flattening a surface of the metal layer, forming a first electrode-side bonding layer having a top layer made of Au on the first electrode, preparing a support substrate including a support substrate-side bonding layer having a top surface made of Au, and bonding the first electrode-side bonding layer and the support substrate-side bonding layer.

Abstract translation: 制造半导体发光元件的方法包括按顺序堆叠第一半导体层和第二半导体层制备半导体叠层结构，在第二半导体层上依次形成第二电极和绝缘层， 第一半导体层，通过去除一部分第二半导体层，通过在暴露的第一半导体层和绝缘层上形成金属层并使金属层的表面变平而形成第一电极，形成第一电极侧接合层，第一电极侧接合层具有 在第一电极上形成由Au制成的顶层，制备支撑基板，其包括具有由Au制成的顶表面的支撑基板侧接合层，并且接合第一电极侧接合层和支撑基板侧接合层。

公开(公告)号：US20140370630A1

公开(公告)日：2014-12-18

申请号：US14470565

申请日：2014-08-27

Applicant: NICHIA CORPORATION

Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

Abstract translation: 可以提供具有高可靠性和优异的配光特性的半导体发光器件，其配置在与衬底上安装有半导体叠层的表面相反的一侧上的光提取表面上的n电极。 多个凸起布置在光提取表面上的第一凸区域和第二凸区域上。 第二凸区域与第一凸区域和n电极之间的n电极和半导体堆叠体之间的界面相邻。 布置在第一凸区域中的第一凸部的基端位于比n电极和半导体叠层之间的界面更靠近发光层的位置，并且布置在第二凸区域中的第二凸起的基端位于 比第一凸起的基端更靠近n电极和半导体叠层之间的界面。

公开(公告)号：US20130178000A1

公开(公告)日：2013-07-11

申请号：US13777700

申请日：2013-02-26

Applicant: Nichia Corporation

Inventor： Hiroaki MATSUMURA

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/387 ,  H01L33/44

Abstract: A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括形成包括第一导电型半导体层，第二导电型半导体层和设置在第一导电型半导体层和第二导电类型半导体层之间的发光层的半导体发光部。 该方法还包括形成连接到第一导电型半导体层的第一导电型半导体侧电极; 形成与所述第二导电型半导体层连接的第二导电型半导体侧电极; 以及形成覆盖半导体发光部的绝缘膜，使得绝缘膜的第一部分被第二导电型半导体侧电极包围，并通过分离区与第二导电型半导体侧电极分离。

公开(公告)号：US20170288096A1

公开(公告)日：2017-10-05

申请号：US15475160

申请日：2017-03-31

Applicant: NICHIA CORPORATION

Inventor： Takuya YAMANOI ,  Nobuhiro UBAHARA ,  Hiroaki MATSUMURA

IPC: H01L33/48 ,  H01L33/60

CPC classification number: H01L33/486 ,  H01L25/167 ,  H01L33/60

Abstract: A light-emitting device includes a substrate including a substrate second upper surface provided between a substrate bottom surface and a substrate first upper surface in a height direction. A light-emitting element to emit ultraviolet light is provided on the substrate first upper surface. A protective element includes a protective element upper surface provided between the substrate first upper surface and the substrate second upper surface in the height direction. A frame is bonded to the substrate first upper surface via adhesive members to surround the light-emitting element. The frame includes a frame lower surface opposite to the substrate first upper surface and the substrate second upper surface in the height direction to provide a gap between the substrate first upper surface and the frame lower surface. A space in which the light-emitting element is provided communicates with an outside of the light-emitting device via the gap.

公开(公告)号：US20140239341A1

公开(公告)日：2014-08-28

申请号：US14189207

申请日：2014-02-25

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: The light emitting element including: a semiconductor laminate including a first layer, an active layer and a second layer; a first electrode including protrusions that penetrate the second layer and the active layer, the first electrode connected to the first layer via the protrusions; a second electrode connected to the second layer on an lower face of the second layer; and an insulation film between the protrusions and the semiconductor laminate, wherein the protrusions each include a protrusion body covered with the insulation film and a protrusion tip, an upper face and a side face of the protrusion tip being exposed from the insulation film, the first layer includes recesses arranged on an upper face of the first layer so as to sandwich first areas located above the respective the protrusions, and a distance between the recesses sandwiching the first area is larger than a width of the protrusion tip.

Abstract translation: 发光元件包括：包括第一层，有源层和第二层的半导体层叠体; 包括穿透所述第二层和所述有源层的突起的第一电极，所述第一电极经由所述突起连接到所述第一层; 在所述第二层的下表面上连接到所述第二层的第二电极; 以及在所述突起和所述半导体层叠体之间的绝缘膜，其中，所述突起各自包括被所述绝缘膜覆盖的突起体和突出尖端，所述突起尖端的上表面和侧面从所述绝缘膜露出，所述第一 层包括布置在第一层的上表面上的凹部，以便夹住位于相应突起之上的第一区域，并且夹住第一区域的凹部之间的距离大于突起末端的宽度。

公开(公告)号：US20140110737A1

公开(公告)日：2014-04-24

申请号：US14060654

申请日：2013-10-23

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA

IPC: H01L33/60

CPC classification number: H01L33/382 ,  H01L33/387 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate placed above the substrate, the semiconductor laminate comprising a second semiconductor layer, an active layer and a first semiconductor layer laminated in this order from the substrate; and a first electrode and a second electrode placed between the substrate and the semiconductor laminate, wherein the semiconductor laminate is divided in a plurality of semiconductor blocks by a groove, wherein the first electrode includes protrusions that are provided in each of the plurality of semiconductor blocks and that penetrate the second semiconductor layer and the active layer to be connected to the first semiconductor layer, and wherein the second electrode is connected to the second semiconductor layer in each of the plurality of semiconductor blocks and has an external connector that is exposed on the bottom of the groove.

Abstract translation: 为了提供具有高发光效率的半导体发光元件，发光元件包括：基板; 放置在所述基板上方的半导体层叠体，所述半导体层叠体包含从所述基板依次层叠的第二半导体层，有源层和第一半导体层; 以及设置在所述基板和所述半导体层叠体之间的第一电极和第二电极，其中，所述半导体层叠体通过凹槽被分割成多个半导体块，其中所述第一电极包括设置在所述多个半导体块中的每一个中的突起 并且穿透第二半导体层和要连接到第一半导体层的有源层，并且其中第二电极连接到多个半导体块中的每一个中的第二半导体层，并且具有暴露在第一半导体层上的外部连接器 凹槽底部

公开(公告)号：US20140038328A1

公开(公告)日：2014-02-06

申请号：US14021551

申请日：2013-09-09

Applicant: Nichia Corporation

Inventor： Yohei WAKAI ,  Hiroaki MATSUMURA ,  Kenji OKA

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/382 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

公开(公告)号：US20130277700A1

公开(公告)日：2013-10-24

申请号：US13851727

申请日：2013-03-27

Applicant: NICHIA CORPORATION

Inventor： Hiroaki MATSUMURA

IPC: H01L33/50

CPC classification number: H01L33/50 ,  H01L33/382 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor light emitting element of which color irregularity is improved, the semiconductor light emitting element according to the present invention comprises: a support substrate; a semiconductor laminated structural body provided on the support substrate, the semiconductor laminated structural body having a first semiconductor layer, a luminescent layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a light shielding member covering a portion of an upper surface and side surfaces of the semiconductor laminated structural body, the light shielding member electrically separated from both of the first electrode and the second electrode; and a wavelength conversion member covering an upper surface not covered by the light shielding member of the semiconductor laminated structural body.

Abstract translation: 为了提供改善颜色不均匀性的半导体发光元件，根据本发明的半导体发光元件包括：支撑基板; 设置在所述支撑基板上的半导体层叠结构体，所述半导体层叠结构体具有第一半导体层，发光层和第二半导体层; 电连接到第一半导体层的第一电极; 电连接到第二半导体层的第二电极; 覆盖半导体层叠结构体的上表面和侧表面的一部分的遮光构件，所述遮光构件与所述第一电极和所述第二电极两者电分离; 以及覆盖未被半导体层叠结构体的遮光构件覆盖的上表面的波长转换构件。