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    METHOD FOR PRODUCING A CONNNECTION STRUCTURE AND SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR PRODUCING A CONNNECTION STRUCTURE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220172960A1

    公开(公告)日：2022-06-02

    申请号：US17442624

    申请日：2020-03-20

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas RUDOLPH ,  Teresa BAUR ,  Christoph KLEMP

    IPC: H01L21/48 ,  H01L23/538 ,  H01L21/768

    Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

    Optoelectronic Device and Method for Producing Same
    8.
    发明申请
    Optoelectronic Device and Method for Producing Same 有权
    光电器件及其制造方法

    公开(公告)号：US20160064610A1

    公开(公告)日：2016-03-03

    申请号：US14888681

    申请日：2014-04-24

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Markus BROLL ,  Christoph KLEMP ,  Wolfgang SCHMID

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/62

    CPC classification number: H01L33/38 ,  H01L33/10 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

    Abstract: A method for producing an optoelectronic component is disclosed. A first layer which has a dielectric to the surface of a semiconductor crystal. A photoresist layer is applied and structured on the first layer. The photoresist layer is structured in such a way that the photoresist layer has an opening, The first layer is partially separated in order to expose a lateral region of the surface. A contact area having a first metal is applied in the lateral region of the surface. The photoresist layer is removed. A second layer, which comprises an optically transparent, electrically conductive material, and a third layer, which comprises a second metal, are applied.

    Abstract translation: 公开了一种用于制造光电子部件的方法。 对于半导体晶体的表面具有电介质的第一层。 在第一层上施加并构造光刻胶层。 光致抗蚀剂层被构造成使得光致抗蚀剂层具有开口。第一层被部分分离以暴露表面的横向区域。 具有第一金属的接触区域被施加在表面的横向区域中。 去除光致抗蚀剂层。 包括光学透明的导电材料的第二层和包括第二金属的第三层被施加。

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