公开(公告)号：US06541709B1

公开(公告)日：2003-04-01

申请号：US08743405

申请日：1996-11-01

申请人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

发明人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

IPC分类号： H05K103

CPC分类号： H01L21/485 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5382 ,  H01L2924/0002 ,  H05K3/225 ,  Y10T29/49126 ,  Y10T29/49165 ,  H01L2924/00

摘要： A multilayer thin film structure having defined strap repair lines thereon and a method for repairing interconnections in the multilayer thin film structure (MLTF) and/or making engineering changes (EC) are provided. The method determines interconnection defects in the MLTF at a thin film layer adjacent the top metal layer of the structure, defines the top surface metallization including a series of orthogonal X conductor lines and Y conductor lines using photoresist and lithography and additive or subtractive metallization techniques and then uses a phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forms the top surface metallization.

摘要翻译： 提供了具有限定的带修复线的多层薄膜结构和用于修复多层薄膜结构（MLTF）中的互连和/或进行工程变化（EC）的方法。 该方法确定在与结构顶层金属层相邻的薄膜层处的MLTF中的互连缺陷，限定顶表面金属化，其包括使用光致抗蚀剂和光刻以及添加或减色金属化技术的一系列正交X导体线和Y导线， 然后使用光学工具选择性地暴露光致抗蚀剂以限定修复互连和/或制造EC所需的顶表面带连接并形成顶表面金属化。

公开(公告)号：US06427324B1

公开(公告)日：2002-08-06

申请号：US09114790

申请日：1998-07-13

申请人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

发明人： Peter A. Franklin ,  Arthur G. Merryman ,  Rajesh S. Patel ,  Thomas A. Wassick

IPC分类号： H01K310

CPC分类号： H01L21/485 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5382 ,  H01L2924/0002 ,  H05K3/225 ,  Y10T29/49126 ,  Y10T29/49165 ,  H01L2924/00

摘要： A multilayer thin film structure having defined strap repair lines thereon and a method for repairing interconnections in the multilayer thin film structure (MLTF) and/or making engineering changes (EC) are provided. The method comprises determining interconnection defects in the MLTF at a thin film layer adjacent the top metal layer of the structure, defining the top surface metallization including a series of orthogonal X conductor lines and Y conductor lines using photoresist and lithography and additive or phototool to selectively expose the photoresist to define top surface strap connections needed to repair the interconnections and/or make EC's, and forming the top surface metallization.

摘要翻译： 提供了具有限定的带修复线的多层薄膜结构和用于修复多层薄膜结构（MLTF）中的互连和/或进行工程变化（EC）的方法。 该方法包括确定MLTF中邻近该结构顶层金属层的薄膜层上的互连缺陷，限定包括一系列正交X导体线的顶表面金属化和使用光刻胶和光刻术和添加剂或光学工具的Y导体线选择性地 暴露光致抗蚀剂以限定修复互连和/或制造EC并且形成顶表面金属化所需的顶表面带连接。

公开(公告)号：US5937269A

公开(公告)日：1999-08-10

申请号：US960695

申请日：1997-10-29

申请人： Roy Yu ,  Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson

发明人： Roy Yu ,  Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson

IPC分类号： H01L21/66 ,  H05K3/22 ,  H01L21/00

CPC分类号： H01L22/22 ,  H05K3/225 ,  H01L2924/0002

摘要： A Process for graphically assisting the partial repair of defective MCM TF wiring nets. The process comprises the steps of inserting the wiring layer of the thin-film device in a tester, scanning the wiring layer of the thin-film device with the tester, identifying defects in the wiring nets, prioritizing the defects based on a function of each of the defective wiring nets, and repairing the defects based on priority.

摘要翻译： 用于图形辅助有缺陷的MCM TF布线网的部分修复的过程。 该方法包括以下步骤：将薄膜器件的布线层插入测试器中，用测试仪扫描薄膜器件的布线层，识别布线网中的缺陷，根据每个 的缺陷接线网，并根据优先级修复缺陷。

公开(公告)号：US06455331B2

公开(公告)日：2002-09-24

申请号：US09867364

申请日：2001-05-29

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L2100

CPC分类号： H01L21/485 ,  H05K3/225

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

公开(公告)号：US06248599B1

公开(公告)日：2001-06-19

申请号：US09452935

申请日：1999-12-02

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L2100

CPC分类号： H01L21/485

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

公开(公告)号：US6048741A

公开(公告)日：2000-04-11

申请号：US962199

申请日：1997-10-31

申请人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

发明人： Roy Yu ,  Kamalesh S. Desai ,  Peter A. Franklin ,  Suryanarayana Kaja ,  Kimberley A. Kelly ,  Yeeling L. Lee ,  Arthur G. Merryman ,  Frank R. Morelli ,  Thomas A. Wassick

IPC分类号： H01L21/48 ,  H05K3/22 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L21/485 ,  H05K3/225 ,  Y10S438/906 ,  Y10S438/94

摘要： A device repair process that includes removing a passivation polyimide layer. The passivation polyimide layer is removed using a first-half ash followed by a second-half ash. The device is rotated during the second-half ash. The device is then cleaned using sodium hydroxide (NaOH) and a subsequent light ash step is implemented. After the passivation polyimide layer is removed, a seed layer is deposited on the device. A photoresist is formed on the seed layer and bond sites are formed in the photoresist. Repair metallurgy is plated through the bond sites. The bond sites are plated by coupling the device to a fixture and applying the current for plating to the fixture. The contact between the device and the fixture is made though bottom surface metallurgy. After plating, the residual seed layer is removed and a laser delete process is implemented to disconnect and isolate the nets of the device.

摘要翻译： 包括去除钝化聚酰亚胺层的器件修复过程。 钝化聚酰亚胺层使用前半灰，然后是二分之一灰分除去。 该设备在后半段灰分期间旋转。 然后使用氢氧化钠（NaOH）清洁该装置，然后实施随后的轻灰步骤。 在去除钝化聚酰亚胺层之后，将晶种层沉积在器件上。 在种子层上形成光致抗蚀剂，并且在光致抗蚀剂中形成结合位点。 修复冶金通过焊接点进行电镀。 通过将设备耦合到固定装置并将电镀电镀施加到固定装置上来对接合部位进行电镀。 设备和夹具之间的接触是通过底部表面冶金制成的。 电镀后，去除残留的种子层，实施激光删除处理，以断开和隔离设备的网络。

公开(公告)号：US6054749A

公开(公告)日：2000-04-25

申请号：US299047

申请日：1999-04-23

申请人： Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson ,  Roy Yu

发明人： Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson ,  Roy Yu

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/538 ,  H05K3/22 ,  H01L27/02 ,  H01L27/10

CPC分类号： H01L21/485 ,  H01L21/76892 ,  H01L23/5382 ,  H05K3/225 ,  H01L2924/0002

摘要： A process for partially repairing defective Multi-Chip Module (MCM) Thin-Film (TF) wiring nets. The process comprises the steps of locating a short circuit between any two nets of the MCM, identifying a site to cut in one of the two nets, and deleting an internal portion of one of the two nets at the identified site.

摘要翻译： 部分修复有缺陷的多芯片模块（MCM）薄膜（TF）布线网的过程。 该过程包括以下步骤：在MCM的任何两个网络之间定位短路，识别在两个网络中的一个网络中切割的站点，以及删除所识别的站点上的两个网络中的一个网络的内部部分。

公开(公告)号：US5972723A

公开(公告)日：1999-10-26

申请号：US955204

申请日：1997-10-21

申请人： Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson ,  Roy Yu

发明人： Gerald K. Bartley ,  Peter A. Franklin ,  Carmine J. Mele ,  Arthur G. Merryman ,  John R. Pennacchia ,  Kurt A. Smith ,  Thomas A. Wassick ,  Thomas A. Wayson ,  Roy Yu

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L23/538 ,  H05K3/22 ,  H01L21/00

CPC分类号： H01L21/485 ,  H01L21/76892 ,  H01L23/5382 ,  H05K3/225 ,  H01L2924/0002

摘要： A process for partially repairing defective Multi-Chip Module (MCM) Thin-Film (TF) wiring nets. The process comprises the steps of locating a short circuit between any two nets of the MCM, identifying a site to cut in one of the two nets, and deleting an internal portion of one of the two nets at the identified site.

摘要翻译： 部分修复有缺陷的多芯片模块（MCM）薄膜（TF）布线网的过程。 该过程包括以下步骤：在MCM的任何两个网络之间定位短路，识别在两个网络中的一个网络中切割的站点，以及删除所识别的站点上的两个网络中的一个网络的内部部分。

公开(公告)号：US06916670B2

公开(公告)日：2005-07-12

申请号：US10358431

申请日：2003-02-04

申请人： Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

发明人： Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

IPC分类号： H05K3/46 ,  H01L21/48 ,  H01L23/12 ,  H01L23/498 ,  H05K1/03 ,  H05K3/00 ,  H05K3/22 ,  H01L21/00

CPC分类号： H05K3/225 ,  H01L21/4846 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/4629 ,  H05K2203/173 ,  Y10T29/49124 ,  Y10T29/49135 ,  H01L2924/00

摘要： A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

摘要翻译： 一种多层陶瓷修复工艺，提供了一种新的电气修复路径，以连接顶部表面通孔。 修复路径是建立在有缺陷的网和包含在多层陶瓷基片内的冗余修复网之间。 有缺陷的网和修复网各自终止在基板的表面通孔处。 使用激光器在基板上和基板上形成点火电路。 之后是有缺陷的网络与电气修复结构的电气隔离和电气修复线路的钝化。

公开(公告)号：US07294909B2

公开(公告)日：2007-11-13

申请号：US11099161

申请日：2005-04-05

申请人： Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

发明人： Jon A. Casey ,  James G. Balz ,  Michael Berger ,  Jerome Cohen ,  Charles Hendricks ,  Richard Indyk ,  Mark LaPlante ,  David C. Long ,  Lori A. Maiorino ,  Arthur G. Merryman ,  Glenn A. Pomerantz ,  Robert A. Rita ,  Krystyna W. Semkow ,  Patrick E. Spencer ,  Brian R. Sundlof ,  Richard P. Surprenant ,  Donald R. Wall ,  Thomas A. Wassick ,  Kathleen M. Wiley

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H05K3/225 ,  H01L21/4846 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/4629 ,  H05K2203/173 ,  Y10T29/49124 ,  Y10T29/49135 ,  H01L2924/00

摘要： A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.

摘要翻译： 一种多层陶瓷修复工艺，提供了一个新的电气修复路径，以连接顶面通孔。 修复路径是建立在有缺陷的网和包含在多层陶瓷基板内的冗余修复网之间。 有缺陷的网和修复网各自终止在基板的表面通孔处。 使用激光器在基板上和基板上形成点火电路。 之后是有缺陷的网络与电气修复结构的电气隔离和电气修复线路的钝化。