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    Source and drain doping profile control employing carbon-doped semiconductor material
    6.
    发明授权
    Source and drain doping profile control employing carbon-doped semiconductor material 有权
    使用碳掺杂半导体材料的源极和漏极掺杂分布控制

    公开(公告)号：US09059292B2

    公开(公告)日：2015-06-16

    申请号：US13564862

    申请日：2012-08-02

    申请人： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

    发明人： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

    IPC分类号： H01L29/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/78

    CPC分类号： H01L29/0847 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/78618 ,  H01L29/78687 ,  H01L2029/7858

    摘要： Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.

    摘要翻译： 碳掺杂半导体材料部分形成在与场效应晶体管的沟道连接的下面的半导体表面的子集上。 碳掺杂半导体材料部分可以通过含碳半导体材料层的选择性外延或通过将碳原子浅入注入下面的半导体表面的表面部分来形成。 碳掺杂的半导体材料部分可以作为层沉积，然后通过蚀刻进行图案化，或者可以在形成一次性掩模间隔物之后形成。 在碳掺杂的半导体材料部分和下面的半导体表面的物理暴露的表面上形成凸起的源区和漏区。 碳掺杂半导体材料部分将掺杂剂扩散部分局部延迟从升高的源极和漏极区域延伸到下面的半导体材料区域中，从而使得能够局部定制掺杂剂分布，以及改变场效应晶体管的器件参数。

    Composite brake drum and method for producing same
    7.
    发明授权
    Composite brake drum and method for producing same 有权
    复合制动鼓及其制造方法

    公开(公告)号：US06601284B1

    公开(公告)日：2003-08-05

    申请号：US09639547

    申请日：2000-08-16

    申请人： Donald R. Wall

    发明人： Donald R. Wall

    IPC分类号： B21B146

    CPC分类号： B22D19/00 ,  B22D25/00 ,  F16D65/10 ,  F16D2065/132 ,  F16D2065/1332 ,  F16D2069/0483 ,  F16D2069/0491 ,  F16D2200/0078 ,  F16D2250/00 ,  F16D2250/0092 ,  Y10T29/49988 ,  Y10T29/49991

    摘要： A composite brake drum for use in a drum brake assembly includes a one-piece mounting flange and shell and a liner cast integrally in a shell portion thereof. The method for forming the composite brake drum of this invention includes the steps of: (a) providing a generally circular metal blank having an initial pilot hole inner diameter; (b) spin forming the metal blank to produce a one-piece brake drum component defining a center longitudinal axis and including a cylindrical shell having a squealer band which defines a squealer band outer diameter, a mounting flange extending radially inwardly from one end of the shell toward the center longitudinal axis, and an annular lip extending radially inwardly from an opposite end of the shell toward the center longitudinal axis, and wherein the shell, the flange, and the lip cooperate to define a cylindrical mold cavity; (c) subsequent to step (b), centrifugally casting a liner in situ within the mold cavity of the brake drum component to thereby produce the composite vehicle brake drum; and (d) subsequent to step (c), machining the initial pilot hole inner diameter to a final pilot hole inner diameter by locating off of the squealer band outer diameter.

    摘要翻译： 用于鼓式制动器组件的复合制动鼓包括一体式安装法兰和壳体以及一体地铸造在壳体部分中的衬套。 本发明的复合制动鼓的形成方法包括以下步骤：（a）提供具有初始导向孔内径的大致圆形的金属坯料; （b）旋转形成金属坯件以制造限定中心纵向轴线的一体式制动鼓部件，并且包括具有限定鼓轮带外径的尖叫带的圆柱形壳体，从所述滚筒的一端径向向内延伸的安装凸缘 壳体朝向中心纵向轴线，以及环形唇缘，其从壳体的相对端朝向中心纵向轴线径向向内延伸，并且其中壳体，凸缘和唇缘配合以限定圆柱形模腔; （c）在步骤（b）之后，在制动鼓部件的模腔内离心铸造衬套，从而产生复合车辆制动鼓; 和（d）在步骤（c）之后，通过定位离开尖叫带外径的方式将初始导向孔内径加工到最终引导孔内径。

    Method of controlling the densification behavior of a metallic feature in a ceramic material
    8.
    发明授权
    Method of controlling the densification behavior of a metallic feature in a ceramic material 失效
    控制陶瓷材料中金属特征的致密化行为的方法

    公开(公告)号：US5302562A

    公开(公告)日：1994-04-12

    申请号：US967596

    申请日：1992-10-28

    申请人： Raschid J. Bezama ,  Donald R. Wall

    发明人： Raschid J. Bezama ,  Donald R. Wall

    IPC分类号： C04B35/622 ,  C04B35/74 ,  C04B38/06 ,  H05K3/40 ,  H05K3/46 ,  B22F7/04

    CPC分类号： C04B35/74 ,  C04B38/068

    摘要： Disclosed is a method of controlling the densification behavior of a metallic feature in a ceramic material, the method including the steps of:obtaining an unsintered ceramic material having at least one metallic feature therein;providing at least the metallic feature with a predetermined amount of carbonaceous material;heating the ceramic material and metallic feature to a predetermined temperature sufficient to cause sintering of the ceramic material, the metallic feature being at least partially inhibited from densifying at the predetermined temperature by the presence of the carbonaceous material.key aspect of the invention is subsequently removing with an oxidizing ambient some or, all of the carbonaceous residue at a predetermined temperature for the optimization of the physical characterization of the fired metallic component in ceramic material without adversely affecting distortion and alignment of the metallic feature.

    摘要翻译： 公开了一种控制陶瓷材料中的金属特征的致密化行为的方法，所述方法包括以下步骤：获得其中具有至少一种金属特征的未烧结陶瓷材料; 至少提供具有预定量的碳质材料的金属特征; 将陶瓷材料和金属特征加热到足以引起陶瓷材料烧结的预定温度，金属特征至少部分地被预防温度下的碳质材料的抑制致密化。 本发明的关键方面随后用氧化环境中的一些或全部碳质残余物在预定温度下去除，以优化陶瓷材料中烧制的金属组分的物理表征，而不会不利地影响金属特征的变形和对准。

    Source and Drain Doping Profile Control Employing Carbon-Doped Semiconductor Material
    9.
    发明申请
    Source and Drain Doping Profile Control Employing Carbon-Doped Semiconductor Material 有权
    源和漏极掺杂曲线控制采用碳掺杂半导体材料

    公开(公告)号：US20140035000A1

    公开(公告)日：2014-02-06

    申请号：US13564862

    申请日：2012-08-02

    申请人： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

    发明人： Viorel Ontalus ,  Pranita Kulkarni ,  Donald R. Wall ,  Zhengmao Zhu

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L29/0847 ,  H01L21/823412 ,  H01L29/0649 ,  H01L29/165 ,  H01L29/167 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/78618 ,  H01L29/78687 ,  H01L2029/7858

    摘要： Carbon-doped semiconductor material portions are formed on a subset of surfaces of underlying semiconductor surfaces contiguously connected to a channel of a field effect transistor. Carbon-doped semiconductor material portions can be formed by selective epitaxy of a carbon-containing semiconductor material layer or by shallow implantation of carbon atoms into surface portions of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions can be deposited as layers and subsequently patterned by etching, or can be formed after formation of disposable masking spacers. Raised source and drain regions are formed on the carbon-doped semiconductor material portions and on physically exposed surfaces of the underlying semiconductor surfaces. The carbon-doped semiconductor material portions locally retard dopant diffusion from the raised source and drain regions into the underlying semiconductor material regions, thereby enabling local tailoring of the dopant profile, and alteration of device parameters for the field effect transistor.

    摘要翻译： 碳掺杂半导体材料部分形成在与场效应晶体管的沟道连接的下面的半导体表面的子集上。 碳掺杂半导体材料部分可以通过含碳半导体材料层的选择性外延或通过将碳原子浅入注入下面的半导体表面的表面部分来形成。 碳掺杂的半导体材料部分可以作为层沉积，然后通过蚀刻进行图案化，或者可以在形成一次性掩模间隔物之后形成。 在碳掺杂的半导体材料部分和下面的半导体表面的物理暴露的表面上形成凸起的源区和漏区。 碳掺杂半导体材料部分将掺杂剂扩散部分局部延迟从升高的源极和漏极区域延伸到下面的半导体材料区域中，从而使得能够局部定制掺杂剂分布，以及改变场效应晶体管的器件参数。

    Method and structure to control thermal gradients in semiconductor wafers during rapid thermal processing
    10.
    发明授权
    Method and structure to control thermal gradients in semiconductor wafers during rapid thermal processing 有权
    控制快速热处理过程中半导体晶片热梯度的方法和结构

    公开(公告)号：US08107800B2

    公开(公告)日：2012-01-31

    申请号：US11970693

    申请日：2008-01-08

    申请人： Raschid J. Bezama ,  Lewis S. Goldmann ,  Donald R. Wall

    发明人： Raschid J. Bezama ,  Lewis S. Goldmann ,  Donald R. Wall

    IPC分类号： F26B19/00

    CPC分类号： H01L21/6875 ,  H01L21/67103

    摘要： An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.

    摘要翻译： 物品在热处理过程中支撑工件。 至少三个细长的支撑构件，例如支撑销，从诸如用于支撑工件的支撑臂的元件向上延伸。 每个支撑构件包括与工件相邻的第一部分。 第二部分从第一部分向下延伸。 第一部分可以具有比工件的热响应更快的热响应，并且第二部分可以具有较慢的热响应。 可移动元件可以安装到支撑构件上，以调节支撑构件的热响应。 使用可移除元件，可以调节支撑构件，使得不会向工件或从工件传出热量的净传递。