公开(公告)号：US09868131B2

公开(公告)日：2018-01-16

申请号：US14794159

申请日：2015-07-08

Applicant: Picosun Oy

Inventor： Vaino Kilpi ,  Wei-Min Li ,  Timo Malinen ,  Juhana Kostamo ,  Sven Lindfors

IPC: C23C16/455 ,  B05C5/00 ,  C23C16/52 ,  C23C16/40 ,  H01L21/02 ,  H01J37/32

CPC classification number: B05C5/001 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32743 ,  H01J37/32871 ,  H01L21/02274

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

公开(公告)号：US20180099304A1

公开(公告)日：2018-04-12

申请号：US15840007

申请日：2017-12-13

Applicant: Picosun Oy

Inventor： Vaino Kilpi ,  Wei-Min Li ,  Timo Malinen ,  Juhana Kostamo ,  Sven Lindfors

IPC: B05C5/00 ,  H01J37/32 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40

CPC classification number: B05C5/001 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32743 ,  H01J37/32871 ,  H01L21/02274

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

公开(公告)号：US20150322569A1

公开(公告)日：2015-11-12

申请号：US14794159

申请日：2015-07-08

Applicant: Picosun Oy

Inventor： Vaino Kilpi ,  Wei-Min Li ,  Timo Malinen ,  Juhana Kostamo ,  Sven Lindfors

IPC: C23C16/455 ,  C23C16/52

CPC classification number: B05C5/001 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32743 ,  H01J37/32871 ,  H01L21/02274

Abstract: The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

Abstract translation: 本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基， 基本上在整个沉积循环期间向反应室开口的进料部分开口。 本发明还涉及相应的装置。

公开(公告)号：US12110588B2

公开(公告)日：2024-10-08

申请号：US17991611

申请日：2022-11-21

Applicant: Picosun Oy

Inventor： Timo Malinen ,  Väinö Kilpi ,  Marko Pudas

IPC: C23C16/455 ,  B01J3/02 ,  B01J3/03 ,  C30B25/14 ,  H01L21/67

CPC classification number: C23C16/45544 ,  B01J3/02 ,  B01J3/03 ,  C23C16/45561 ,  C23C16/45563 ,  C30B25/14 ,  H01L21/67017 ,  H01L21/67126

Abstract: A fluid inlet assembly for a substrate processing apparatus includes a fluid inlet pipe configured to pass through a wall of a sealed pressure vessel, a resilient element around the fluid inlet pipe outside the sealed pressure vessel coupling the fluid inlet pipe to the wall, and first and second end parts, the resilient element being coupled therebetween.

公开(公告)号：US11970774B2

公开(公告)日：2024-04-30

申请号：US18163315

申请日：2023-02-02

Applicant: Picosun Oy

Inventor： Timo Malinen

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45546 ,  C23C16/45548 ,  C23C16/458

Abstract: A deposition or cleaning apparatus comprising an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber.

公开(公告)号：US11505864B2

公开(公告)日：2022-11-22

申请号：US16622070

申请日：2017-06-21

Applicant: Picosun Oy

Inventor： Timo Malinen ,  Väinö Kilpi ,  Marko Pudas

IPC: C23C16/455 ,  B01J3/02 ,  B01J3/03 ,  H01L21/67 ,  C30B25/14

Abstract: A substrate processing apparatus, includes a sealed pressure vessel, such as an Atomic Layer Deposition, ALD, apparatus, a fluid inlet assembly attached to a wall of the sealed pressure vessel, the fluid inlet assembly having a fluid inlet pipe passing through the wall, and a resilient element in the fluid inlet assembly around the fluid inlet pipe coupling the inlet pipe to the wall, where one of an interior surface and an exterior surface of the resilient element sees pressure prevailing within the pressure vessel and the other sees ambient pressure, and where the fluid inlet pipe prevents fluid carried inside from being in contact with the resilient element, and a relating method.

公开(公告)号：US11725279B2

公开(公告)日：2023-08-15

申请号：US16481221

申请日：2017-02-08

Applicant: Picosun Oy

Inventor： Timo Malinen

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45546 ,  C23C16/458 ,  C23C16/45548

Abstract: A deposition or cleaning apparatus including an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber

公开(公告)号：US10597778B2

公开(公告)日：2020-03-24

申请号：US15536853

申请日：2015-11-25

Applicant: Picosun Oy

Inventor： Timo Malinen

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/54

Abstract: A deposition method, including providing a channel through a deposition apparatus, feeding precursor vapor into the channel, and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus by exposing the substrate to the precursor vapor and to alternating photon exposure and shade periods within the channel.

公开(公告)号：US09869020B2

公开(公告)日：2018-01-16

申请号：US14783516

申请日：2013-04-10

Applicant: Picosun Oy

Inventor： Timo Malinen ,  Harri Vähämäki

IPC: C23C16/455 ,  C30B25/02 ,  C30B25/00 ,  C30B35/00 ,  C30B25/08 ,  C30B25/14 ,  C23C16/04 ,  C23C16/44

CPC classification number: C23C16/45525 ,  C23C16/045 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45555 ,  C30B25/00 ,  C30B25/02 ,  C30B25/025 ,  C30B25/08 ,  C30B25/14 ,  C30B35/00 ,  F04C2230/91 ,  F05C2253/12

Abstract: An apparatus and method for protecting a target pump interior, where a target pump (10) inlet is provided with an inlet manifold (20) and a target pump outlet with an exhaust manifold (30). The target pump interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases according to an ALD method via the inlet manifold into the target pump interior and outlet of reaction residue via the exhaust manifold, while the target pump is kept running or not running. A technical effect of the invention is protecting a pump interior, which can be also an assembled pump interior, by a conformal protective coating.

公开(公告)号：US09745661B2

公开(公告)日：2017-08-29

申请号：US14899952

申请日：2013-06-27

Applicant: Picosun Oy

Inventor： Timo Malinen ,  Väinö Kilpi

IPC: C23C16/54 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/545 ,  C23C16/45544 ,  C23C16/458

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.