摘要:
A process for forming a capacitor with a high-k dielectric or ferroelectric layer within a semiconductor device is used to reduce the likelihood of oxidation or materials interactions between that layer and an underlying layer. A first electrode layer includes atoms that form along grain boundaries within the first electrode layer to reduce the oxidation of a conductive plug or undesired materials interactions.
摘要:
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要:
Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells are provided. In some embodiments, systems for forming a solar cell on a substrate are provided, the systems comprising: a master shadow mask positioned adjacent to the substrate on a first side of the master shadow mask; a first blocking mask placed adjacent to a second side of the master shadow mask; and a deposition machine that deposits material on the substrate through holes in the master shadow mask and the first blocking mask.
摘要:
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.
摘要:
A method is provided for planarizing a multi-layer metal bonding pad. A first metal layer (13) is provided. A first dielectric layer (14) is provided with a multitude of vias (17) covering the first metal layer (13), thereby exposing portions of the first metal layer (13) through the multitude of vias (17) in the first dielectric (14). A second metal layer (18) is deposited on the first dielectric layer (14) making electrical contact to the first metal layer through the multitude of vias (17). Planarization of the second metal layer (18) is achieved by having the second metal layer (18) cover the first dielectric layer (14) and making contact through the vias (17).
摘要:
Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
摘要:
Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.
摘要:
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要:
A method of detecting the endpoint of expitaxially grown silicon using a monitor wafer is described. A monitor wafer having a substrate, an oxide layer, and a polysilicon layer is process in an epi chamber along with working wafers. The monitor wafer is used to determine the endpoint of the working wafers epi layer when the epi layer is etched.
摘要:
A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0.1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100.degree. C. and 225.degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.