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公开(公告)号：US06518070B1
公开(公告)日：2003-02-11
申请号：US09571586
申请日：2000-05-17
申请人： Prasad V. Alluri , Mark Victor Raymond , Sucharita Madhukar , Roland R. Stumpf , Chun-Li Liu , Clarence J. Tracy
发明人： Prasad V. Alluri , Mark Victor Raymond , Sucharita Madhukar , Roland R. Stumpf , Chun-Li Liu , Clarence J. Tracy
IPC分类号： H01L2170
CPC分类号： H01L21/3212 , H01L27/1057 , H01L27/108 , H01L27/10844 , H01L27/10852 , H01L27/10882 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A process for forming a capacitor with a high-k dielectric or ferroelectric layer within a semiconductor device is used to reduce the likelihood of oxidation or materials interactions between that layer and an underlying layer. A first electrode layer includes atoms that form along grain boundaries within the first electrode layer to reduce the oxidation of a conductive plug or undesired materials interactions.
摘要翻译： 用于在半导体器件内形成具有高k电介质层或铁电体层的电容器的工艺被用于降低该层与下层之间的氧化或材料相互作用的可能性。 第一电极层包括沿第一电极层内的晶界形成的原子，以减少导电塞的氧化或不期望的材料相互作用。
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公开(公告)号：US5700721A
公开(公告)日：1997-12-23
申请号：US658041
申请日：1996-06-04
申请人： Hank Hukyoo Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
发明人： Hank Hukyoo Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
IPC分类号： H01L23/532 , H01L21/443
CPC分类号： H01L23/53219 , H01L2924/0002
摘要： A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要翻译： 提供了一种用于包括铝，铜和钨的半导体器件的金属化合金。 在施加金属化的方法中，将金属溅射到其上形成有器件的半导体衬底上。 沉积后，使用常规的半导体光致抗蚀剂和蚀刻技术对金属化进行构图和蚀刻。
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公开(公告)号：US09627558B2
公开(公告)日：2017-04-18
申请号：US14682833
申请日：2015-04-09
IPC分类号： H01L31/0224 , H01L31/0747
CPC分类号： H01L31/022441 , H01L31/0747 , Y02E10/50
摘要： Methods and apparatuses for manufacturing self-aligned integrated back contact heterojunction solar cells are provided. In some embodiments, systems for forming a solar cell on a substrate are provided, the systems comprising: a master shadow mask positioned adjacent to the substrate on a first side of the master shadow mask; a first blocking mask placed adjacent to a second side of the master shadow mask; and a deposition machine that deposits material on the substrate through holes in the master shadow mask and the first blocking mask.
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4.发明授权公开(公告)号：US06798004B1
公开(公告)日：2004-09-28
申请号：US10421095
申请日：2003-04-22
IPC分类号： H01L2976
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228
摘要： Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.
摘要翻译： 制造磁阻随机存取存储器单元和用于磁阻随机存取存储单元的结构开始于提供其中形成有晶体管的衬底。 形成电耦合到晶体管的接触元件，并且电介质材料沉积在由接触元件部分界定的区域内。 在电介质材料内形成数字线，数字线覆盖接触元件的一部分。 导电层形成在数字线上方并与接触元件电连通。
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公开(公告)号：US5149674A
公开(公告)日：1992-09-22
申请号：US716454
申请日：1991-06-17
IPC分类号： H01L21/60 , H01L23/485
CPC分类号： H01L24/05 , H01L23/485 , H01L24/03 , H01L2224/02166 , H01L2224/05556 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/14
摘要： A method is provided for planarizing a multi-layer metal bonding pad. A first metal layer (13) is provided. A first dielectric layer (14) is provided with a multitude of vias (17) covering the first metal layer (13), thereby exposing portions of the first metal layer (13) through the multitude of vias (17) in the first dielectric (14). A second metal layer (18) is deposited on the first dielectric layer (14) making electrical contact to the first metal layer through the multitude of vias (17). Planarization of the second metal layer (18) is achieved by having the second metal layer (18) cover the first dielectric layer (14) and making contact through the vias (17).
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公开(公告)号：US4970176A
公开(公告)日：1990-11-13
申请号：US414355
申请日：1989-09-29
IPC分类号： H01L21/768
CPC分类号： H01L21/76882 , Y10S148/025
摘要： Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
摘要翻译： 通过利用多步金属化工艺改进了金属台阶覆盖。 在第一步骤中，在半导体晶片上，在较冷的温度下沉积厚的金属层。 随着温度升高，金属剩余量沉积在第二步中，以允许通过晶粒生长，重结晶和体扩散来回流金属层。 在冷温度下沉积的金属层的厚部分具有足够的厚度，使得其在更高的温度下保持连续并且通过填充增强。
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7.发明授权公开(公告)号：US07169622B2
公开(公告)日：2007-01-30
申请号：US10912979
申请日：2004-08-05
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228
摘要： Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.
摘要翻译： 制造磁阻随机存取存储器单元和用于磁阻随机存取存储单元的结构开始于提供其中形成有晶体管的衬底。 形成电耦合到晶体管的接触元件，并且电介质材料沉积在由接触元件部分界定的区域内。 在电介质材料内形成数字线，数字线覆盖接触元件的一部分。 导电层形成在数字线上方并与接触元件电连通。
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公开(公告)号：US5554889A
公开(公告)日：1996-09-10
申请号：US430105
申请日：1995-04-27
申请人： Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
发明人： Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
IPC分类号： H01L23/532 , A01L23/48 , A01L23/52 , A01L29/40
CPC分类号： H01L23/53219 , H01L2924/0002
摘要： A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要翻译： 提供了一种用于包括铝，铜和钨的半导体器件的金属化合金。 在施加金属化的方法中，将金属溅射到其上形成有器件的半导体衬底上。 沉积后，使用常规的半导体光致抗蚀剂和蚀刻技术对金属化进行构图和蚀刻。
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公开(公告)号：US4717446A
公开(公告)日：1988-01-05
申请号：US909043
申请日：1986-09-18
IPC分类号： G01B11/06 , H01L21/66 , H01L21/306
CPC分类号： B24B37/013 , G01B11/0683 , H01L22/26
摘要： A method of detecting the endpoint of expitaxially grown silicon using a monitor wafer is described. A monitor wafer having a substrate, an oxide layer, and a polysilicon layer is process in an epi chamber along with working wafers. The monitor wafer is used to determine the endpoint of the working wafers epi layer when the epi layer is etched.
摘要翻译： 描述了使用监视器晶片检测外延生长的硅的端点的方法。 具有衬底，氧化物层和多晶硅层的监测晶片与工作晶片一起在外延室中进行。 当外延层被蚀刻时，监测晶片用于确定工作晶片外延层的端点。
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公开(公告)号：US4201579A
公开(公告)日：1980-05-06
申请号：US912615
申请日：1978-06-05
IPC分类号： G03F7/42 , H01L21/311 , G03C5/00 , C23F1/02
CPC分类号： G03F7/427 , H01L21/311 , H01L21/31138
摘要： A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0.1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100.degree. C. and 225.degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.
摘要翻译： 从基板去除光致抗蚀剂的方法。 待剥离光致抗蚀剂的基材放置在随后装载到等离子体反应器中的金属基底保持器或舟皿中。 保持器与等离子体反应器的一个电极接触。 将等离子体反应器抽真空并将含氢气体以保持压力在0.1和10托之间的速率注入反应器中。 将光致抗蚀剂涂覆的基底加热到100℃和225℃之间的温度。将功率施加到等离子体反应器以产生与光致抗蚀剂反应并除去光致抗蚀剂的氢等离子体。 在去除操作期间，监测来自反应器的反射功率以检测等离子体 - 光致抗蚀剂反应的终点。
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