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    CURRENT LIMITING CIRCUIT
    1.
    发明申请
    CURRENT LIMITING CIRCUIT 有权
    电流限制电路

    公开(公告)号：US20130278236A1

    公开(公告)日：2013-10-24

    申请号：US13923017

    申请日：2013-06-20

    Applicant: Renesas Electronics Corporation

    Inventor： Akihiro NAKAHARA

    IPC: G05F1/10

    CPC classification number: G05F1/10 ,  H01L2224/48247 ,  H03K17/0822

    Abstract: An exemplary aspect of the present invention is a current limiting circuit including: an output transistor that controls a current flowing to a load from a power supply; a current sense transistor through which a current dependent on a current flowing through the output transistor flows; a sense resistor connected in series with the current sense transistor; a potential difference detection unit that detects a potential difference generated between both ends of the sense resistor; a constant current generation unit that supplies a constant current to the potential difference detection unit; and a control unit that controls a conduction state of the output transistor based on a control voltage generated based on the potential difference and the constant current, in which the sense resistor is disposed so as to surround the potential difference detection unit.

    Abstract translation: 本发明的示例性方面是限流电路，包括：输出晶体管，其控制从电源流向负载的电流; 电流检测晶体管，依赖于流过输出晶体管的电流的电流流过该电流检测晶体管; 与电流检测晶体管串联连接的感测电阻器; 电位差检测单元，其检测在所述检测电阻器的两端之间产生的电位差; 恒定电流产生单元，其向所述电位差检测单元供给恒定电流; 以及控制单元，其基于以所述电位差和所述恒定电流生成的控制电压来控制所述输出晶体管的导通状态，所述恒定电流设置在所述电位差检测单元的周围。

    POWER SUPPLY CONTROL APPARATUS INCLUDING OVERCURRENT DETECTION CIRCUIT
    2.
    发明申请
    POWER SUPPLY CONTROL APPARATUS INCLUDING OVERCURRENT DETECTION CIRCUIT 有权
    电源控制装置，包括过流检测电路

    公开(公告)号：US20130258530A1

    公开(公告)日：2013-10-03

    申请号：US13903285

    申请日：2013-05-28

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Akihiro NAKAHARA

    IPC: H02H7/10

    CPC classification number: H02H7/10 ,  G01R19/16571 ,  H02H3/087

    Abstract: A comparator includes a first potential supply terminal, a second potential supply terminal supplying a different potential from that of the first potential supply terminal, a first transistor of a first conductivity type coupled between the first potential supply terminal and a first node, and including a control terminal coupled to a first terminal, a second transistor of the first conductivity type coupled between the first potential supply terminal and a second node, and including a control terminal coupled to a second terminal, a third transistor of a second conductivity type coupled between the first node and a third terminal, and including a control terminal coupled to the second node, and a fourth transistor of the second conductivity type coupled between the second node and the second potential supply terminal, and including a control terminal coupled to the second node.

    Abstract translation: 比较器包括第一电位供应端，提供与第一电位端不同的电位的第二电位电源端，第一电导型的第一晶体管，耦合在第一电位供应端和第一节点之间， 控制端子，耦合到第一端子，耦合在第一电位供应端子和第二节点之间的第一导电类型的第二晶体管，并且包括耦合到第二端子的控制端子，第二导电类型的第三晶体管， 第一节点和第三终端，并且包括耦合到第二节点的控制终端，以及耦合在第二节点和第二电位供应终端之间的第二导电类型的第四晶体管，并且包括耦合到第二节点的控制终端。

    INPUT BUFFER, SEMICONDUCTOR DEVICE AND ENGINE CONTROL UNIT
    3.
    发明申请
    INPUT BUFFER, SEMICONDUCTOR DEVICE AND ENGINE CONTROL UNIT 审中-公开

    公开(公告)号：US20180091068A1

    公开(公告)日：2018-03-29

    申请号：US15656864

    申请日：2017-07-21

    Applicant: Renesas Electronics Corporation

    Inventor： Naohiro YOSHIMURA ,  Akihiro NAKAHARA ,  Makoto TANAKA

    IPC: H02P1/02 ,  H02P29/20

    CPC classification number: H02P1/022 ,  H02P29/20

    Abstract: Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

    ELECTRONIC DEVICE
    4.
    发明申请
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20180295715A1

    公开(公告)日：2018-10-11

    申请号：US15762986

    申请日：2015-11-30

    Applicant: Renesas Electronics Corporation

    Inventor： Tatsuaki TSUKUDA ,  Akihiro NAKAHARA

    IPC: H05K1/02 ,  H05K1/18 ,  H05K1/11 ,  H01G4/30 ,  H01L25/16

    Abstract: An electronic device according to one embodiment includes a wiring substrate, the wiring substrate having a first wiring connected to a first external terminal and a second wiring connected to a second external terminal and extending along the first wiring. Additionally, the above electronic device has a semiconductor device mounted on the above wiring substrate and electrically connected to each of the first and second wirings. Further, the above electronic device has a capacitor mounted on the above wiring substrate and electrically connected to the semiconductor device via each of the above first and second wirings. Furthermore, a distance between the above semiconductor device and capacitor is shorter than a distance between each of the above first and second external terminals and the above capacitor.

    POWER SEMICONDUCTOR DEVICE
    6.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20150022247A1

    公开(公告)日：2015-01-22

    申请号：US14508432

    申请日：2014-10-07

    Applicant: RENESAS ELECTRONICS CORPORATION

    Inventor： Akihiro NAKAHARA ,  Sakae NAKAJIMA

    IPC: H03K17/16 ,  H03K17/04

    CPC classification number: H03K17/161 ,  H01L27/0716 ,  H01L27/088 ,  H01L29/7813 ,  H01L29/7835 ,  H03K17/04 ,  H03K17/081 ,  H03K17/0822

    Abstract: A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level.

    Abstract translation: 功率半导体器件包括输出晶体管，与输出晶体管的栅极连接的控制电路，从第一节点到接地端子的第一放电路径，以及从第一节点到接地端子的第二放电路径。 在通常的关闭中，仅使用第一放电路线。 当发生负载异常时，使用第一和第二放电路径。 第二放电路径包含放电晶体管和逆流防止装置。 放电晶体管连接在第一节点和第二节点之间。 逆流防止装置防止从第三节点到第二节点的电流流动。 至少在OFF期间，控制电路将放电晶体管的栅极电压设定为高电平。

    SEMICONDUCTOR DEVICE, POWER CONTROLLING SEMICONDUCTOR DEVICE, ON-VEHICLE ELECTRONIC CONTROL UNIT, AND VEHICLE INCLUDING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE, POWER CONTROLLING SEMICONDUCTOR DEVICE, ON-VEHICLE ELECTRONIC CONTROL UNIT, AND VEHICLE INCLUDING THE SAME 审中-公开
    半导体器件，功率控制半导体器件，车载电子控制单元，以及包括其的车辆

    公开(公告)号：US20160311327A1

    公开(公告)日：2016-10-27

    申请号：US15096107

    申请日：2016-04-11

    Applicant: Renesas Electronics Corporation

    Inventor： Akihiro NAKAHARA ,  Makoto Tanaka

    IPC: B60L11/18 ,  H03K17/082

    CPC classification number: H03K17/0822 ,  B60L50/50 ,  H03K17/74 ,  Y02T10/142

    Abstract: According to one embodiment, a switching control circuit (CTL1) includes a Zener diode (D1) that, when a voltage between a drain (Dr1) and a source (Sr1) of an output transistor (T1) that controls a current flowing through a load (4) exceeds a specified value (Vc1), allows continuity between the drain (Dr1) and the source (Sr1) of the output transistor (T1), and a current mirror circuit that, when a current flows through the Zener diode (D1), allows continuity between the drain (Dr1) and a gate (Gt1) of the output transistor (T1).

    Abstract translation: 根据一个实施例，开关控制电路（CTL1）包括齐纳二极管（D1），当在漏极（Dr1）和输出晶体管（T1）的源极（Sr1）之间的电压控制流过 负载（4）超过规定值（Vc1），允许输出晶体管（T1）的漏极（Dr1）和源极（Sr1）之间的导通性，以及当电流流过齐纳二极管 D1）允许漏极（Dr1）和输出晶体管（T1）的栅极（Gt1）之间的导通。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170346274A1

    公开(公告)日：2017-11-30

    申请号：US15496275

    申请日：2017-04-25

    Applicant: Renesas Electronics Corporation

    Inventor： Akihiro NAKAHARA ,  Makoto TANAKA

    IPC: H02H3/20 ,  H03K17/687

    Abstract: A semiconductor device according to related art has a problem that a clamp voltage that clamps an output voltage cannot adaptively vary in accordance with a power supply voltage, and it is thus not possible to reduce heating of a semiconductor chip to a sufficiently low level. According to one embodiment, a semiconductor device includes a drive circuit (10) that controls on and off of an output transistor (13) and an overvoltage protection circuit (12) that controls a conductive state of the output transistor (13) when an output voltage Vout reaches a clamp voltage, and the overvoltage protection circuit (12) has a circuit structure that sets the clamp voltage to vary in proportion to a power supply voltage VDD.

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