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14 条记录 (耗时 0.021 秒)

    Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density
    5.
    发明申请
    Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density 有权
    使用电化学沉积凹槽的亚微米金属化方法，其包括在第一电流密度下的第一沉积和以增加的电流密度的第二沉积

    公开(公告)号：US20050051436A1

    公开(公告)日：2005-03-10

    申请号：US10882664

    申请日：2004-07-01

    申请人： Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

    发明人： Linlin Chen ,  Lyndon Graham ,  Thomas Ritzdorf ,  Dakin Fulton ,  Robert Batz

    IPC分类号： C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  H01L21/288 ,  H01L21/768 ,  H05K3/00

    CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/76877 ,  H01L21/76883

    摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

    摘要翻译： 公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。 该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。 根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。 接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。 提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。 在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。 提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

    ADJUSTABLE WALL BRACE
    6.
    发明申请
    ADJUSTABLE WALL BRACE 审中-公开
    可调节的墙面

    公开(公告)号：US20110173918A1

    公开(公告)日：2011-07-21

    申请号：US12689343

    申请日：2010-01-19

    申请人： Lyndon Graham

    发明人： Lyndon Graham

    IPC分类号： E04G21/26 ,  B23P17/00 ,  E04B1/38

    CPC分类号： E04G21/26 ,  Y10T29/49623

    摘要： An adjustable wall brace may include: (a) an adjustment portion including a right-hand threaded portion and a left-hand threaded portion; (b) an extension portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion; and (c) a base portion including a threaded aperture configured to received at least one of the right-hand threaded portion and the left-hand threaded portion.A method for manufacturing an adjustable wall brace may include: (a) disposing an extension member within an extension receiving member; (b) receiving a first threaded portion of a dual-threaded adjustment mechanism within a threaded receiving aperture of at least one of the extension member and the extension receiving member; and (c) receiving a second threaded portion of the dual-threaded adjustment within a second threaded receiving aperture.

    摘要翻译： 可调节的壁支架可以包括：（a）包括右旋螺纹部分和左旋螺纹部分的调节部分; （b）延伸部分，包括螺纹孔，构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个; 和（c）包括构造成容纳右手螺纹部分和左旋螺纹部分中的至少一个的螺纹孔的基部。 制造可调壁支架的方法可以包括：（a）在延伸容纳构件内设置延伸构件; （b）在所述延伸构件和所述延伸接收构件中的至少一个的螺纹接收孔内接收双螺纹调节机构的第一螺纹部分; 和（c）在第二螺纹接收孔内接收所述双螺纹调节件的第二螺纹部分。

    Wire Nut Electrical Connector
    8.
    发明申请
    Wire Nut Electrical Connector 有权

    公开(公告)号：US20220224023A1

    公开(公告)日：2022-07-14

    申请号：US17351897

    申请日：2021-06-18

    申请人： Lyndon Graham ,  Tammy Graham

    发明人： Lyndon Graham ,  Tammy Graham

    IPC分类号： H01R4/22 ,  H01R4/12 ,  G01R15/12

    摘要： This present invention relates to an electric testing assistance tool in the form a wire nut or electrical connector. The tool is a funnel shaped flame resistant and insulating device and has a top end and a bottom end with curved walls. The top end includes a central hole to receive a testing probe of a tester device. The device has an internal metal spiral thread connected to a metal ball connector. The metal spiral thread twistable about a plurality of wire end leads. The leads extending from the bottom end opening are connected to a target wiring whose electrical parameters and continuity is to be measured using the electric testing assistance tool. The testing probe can be inserted through the central hole to contact the metal ball to measure the electric parameters and continuity of the target wiring.

    IN-SITU CLEANING PROCESSES FOR SEMICONDUCTOR ELECTROPLATING ELECTRODES
    9.
    发明申请
    IN-SITU CLEANING PROCESSES FOR SEMICONDUCTOR ELECTROPLATING ELECTRODES 审中-公开
    半导体电镀电极的现场清洁工艺

    公开(公告)号：US20070215481A1

    公开(公告)日：2007-09-20

    申请号：US11694733

    申请日：2007-03-30

    申请人： Lyndon Graham ,  Thomas Ritzdorf ,  Jeffrey Turner

    发明人： Lyndon Graham ,  Thomas Ritzdorf ,  Jeffrey Turner

    IPC分类号： C25D7/12

    CPC分类号： H01L21/67751 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/08 ,  H01L21/67126

    摘要： Methods and apparatuses for in-situ cleaning of semiconductor electroplating electrodes to remove plating metal without requiring the manual removal of the electrodes from the semiconductor plating equipment. The electrode is placed into the plating liquid and an electrical current having reverse polarity is passed between the electrode and plating liquid. Plating deposits which have accumulated on the electrode are electrochemically dissolved and removed from the electrode.

    摘要翻译： 用于半导体电镀电极的原位清洁以去除电镀金属的方法和装置，而不需要从半导体电镀设备手动去除电极。 将电极放置在电镀液中，并且具有相反极性的电流在电极和镀液之间通过。 积聚在电极上的电镀沉积物电化学溶解并从电极中去除。

    Semiconductor plating system workpiece support having workpiece-engaging electrodes with distal contact part and dielectric cover
    10.
    发明申请
    Semiconductor plating system workpiece support having workpiece-engaging electrodes with distal contact part and dielectric cover 审中-公开
    半导体电镀系统工件支架具有工件接合电极与远端接触部分和电介质盖

    公开(公告)号：US20050061675A1

    公开(公告)日：2005-03-24

    申请号：US10716191

    申请日：2003-11-18

    申请人： Martin Bleck ,  Lyndon Graham ,  Kyle Hanson

    发明人： Martin Bleck ,  Lyndon Graham ,  Kyle Hanson

    IPC分类号： H01L21/687 ,  C25D5/02 ,  C25D17/00

    CPC分类号： H01L21/68728 ,  H01L21/68785 ,  H01L21/68792

    摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrode assemblies which have a contact part which connects to a distal end of an electrode shaft and bears against the workpiece and conducts current therebetween. The contact part is preferably made from a corrosion resistant material, such as platinum. The electrode assembly also preferably includes a dielectric layer which covers the distal end of the electrode shaft and seals against the contact part to prevent plating liquid from corroding the joint between these parts.

    摘要翻译： 一种用于电镀系统中用于将金属层镀在半导体工件上的半导体工件保持器，并且在将铜电镀到半导体材料上方面具有特别的优点。 工件保持器包括电极组件，其具有接触部分，该接触部分连接到电极轴的远端并承受工件并在其间传导电流。 接触部分优选由诸如铂的耐腐蚀材料制成。 电极组件还优选包括覆盖电极轴的远端并密封接触部分的电介质层，以防止电镀液腐蚀这些部件之间的接合部。