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    VERTICAL MEMORY DEVICE
    2.
    发明申请
    VERTICAL MEMORY DEVICE 有权

    公开(公告)号：US20220399401A1

    公开(公告)日：2022-12-15

    申请号：US17826944

    申请日：2022-05-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongseok Kwon ,  Youngsik Rho ,  Sangwon Park ,  Sungwhan Seo ,  Dongkyu Lee ,  Jaeyong Jeong

    IPC: H01L27/24

    Abstract: A memory device including a first substrate extending in a first direction and a second direction perpendicular to the first direction, the first substrate including a memory cell region and a first peripheral circuit region, and a second substrate, including a second peripheral circuit region, extending in the first and second direction, the second substrate overlapping the first substrate in a third direction perpendicular to the first and second direction. The memory device also including a memory cell array disposed in the memory cell region and including a plurality of vertical channel structures extending in the third direction, a peripheral circuit disposed in the second peripheral circuit region, and a resistor extending in the third direction through the first peripheral circuit region and the second peripheral circuit region. The resistor including a plurality of resistance contact structures overlapping the plurality of vertical channel structures in the first direction.

    Speech recognition method and device
    5.
    发明授权
    Speech recognition method and device 有权

    公开(公告)号：US10573317B2

    公开(公告)日：2020-02-25

    申请号：US16103195

    申请日：2018-08-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongwook Kim ,  Jamin Goo ,  Gangheok Kim ,  Dongkyu Lee

    IPC: G10L15/26 ,  G10L15/02 ,  G10L15/22 ,  G10L15/30 ,  G10L15/01

    Abstract: An electronic device and method are disclosed herein. The electronic device implements the method, including: receiving a first speech, and extracting a first text from the received first speech, in response to detecting that extraction of the first text includes errors such that a request associated with the first speech is unprocessable, storing the extracted first text, receiving a second speech and extracting a second text from the received second speech, in response to detecting that the request is processable using the extracted second text, detecting whether a similarity between the first and second texts is greater than a similarity threshold, and whether the second speech is received within a predetermined time duration of receiving the first speech, and when the similarity is greater than the threshold, and the first and second speech signals are received within the time duration, storing the first text in association with the second text.

    Wearable electronic device and operating method thereof
    6.
    发明授权
    Wearable electronic device and operating method thereof 有权

    公开(公告)号：US10178462B2

    公开(公告)日：2019-01-08

    申请号：US15665989

    申请日：2017-08-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang-Il Park ,  Dongkyu Lee

    IPC: H04R1/10 ,  G06F3/16

    Abstract: An electronic device is provided. The electronic device includes a housing having a wearable shape configured to be worn on a human body, a coupling device disposed to at least one area of the housing and changeable from a first state to a second state so that the housing is coupled to an external object, an input signal generating device for generating an input signal when the coupling device is changed to the second state, and a control circuit configured to execute at least one instruction on the basis of at least one input signal generated from the input signal generating device.

    INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
    7.
    发明公开
    INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240096956A1

    公开(公告)日：2024-03-21

    申请号：US18370663

    申请日：2023-09-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyungjoo Na ,  Woobin Song ,  Jinwook Yang ,  Cheoljin Yun ,  Dongkyu Lee ,  Yoshinao Harada

    IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L29/66

    CPC classification number: H01L29/0673 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/4933 ,  H01L29/66553

    Abstract: An integrated circuit semiconductor device includes a nanosheet extending above a substrate in a first horizontal direction, a gate electrode extending in a second horizontal direction while surrounding the nanosheet with a gate insulating layer therebetween, a first source/drain region on a side of the nanosheet, and a second source/drain region on another side of the nanosheet, wherein the first source/drain region includes first silicide layers provided inward from surfaces of the nanosheet, first metal layers surrounding the nanosheet from upper and lower sides of the first silicide layers, and a first nanosheet region provided between the first silicide layers, wherein the second source/drain region includes second silicide layers formed inward from the surfaces of the nanosheet, second metal layers surrounding the nanosheet from upper and lower sides of the second silicide layers, and a second nanosheet region provided between the second silicide layers.

    MAGNETIC MEMORY DEVICES
    8.
    发明申请
    MAGNETIC MEMORY DEVICES 审中-公开

    公开(公告)号：US20200161368A1

    公开(公告)日：2020-05-21

    申请号：US16444541

    申请日：2019-06-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongkyu Lee

    IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02

    Abstract: A magnetic memory device may include magnetic tunnel junction patterns on a substrate, a conductive line extending between the substrate and the magnetic tunnel junction patterns and in contact with bottom surfaces of the magnetic tunnel junction patterns, and a bottom pattern located between the conductive line and the substrate and in contact with a bottom surface of the conductive line. The material of the conductive line may have a first lattice constant, and the material of the bottom pattern may have a second lattice constant that is less than the first lattice constant of the conductive line. Alternatively or additionally, the bottom pattern includes a metal nitride, and a nitrogen content of the bottom pattern is higher than a metal element content of the metal element.

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