公开(公告)号：US10002086B1

公开(公告)日：2018-06-19

申请号：US15385324

申请日：2016-12-20

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Stella Achtenberg ,  Eran Sharon ,  Ran Zamir ,  Amir Shaharabany

IPC: H03M13/00 ,  G06F13/16 ,  G06F13/40 ,  G06F11/10 ,  G11C29/52 ,  H03M13/11 ,  G06F3/06

Abstract: In an illustrative example, a device includes a memory and a controller that is coupled to the memory and that is configured to communicate with the memory using at least a first channel and a second channel. The controller includes a bit error rate (BER) estimator configured to estimate a first BER corresponding to the first channel and a second BER corresponding to the second channel. The controller also includes a throughput balancer configured to determine whether to adjust at least one of a first clock rate of the first channel or a second clock rate of the second channel based on the first BER and the second BER.

公开(公告)号：US09990158B2

公开(公告)日：2018-06-05

申请号：US15189684

申请日：2016-06-22

Applicant: SanDisk Technologies LLC

Inventor： Amir Shaharabany ,  Yoav Markus ,  Tal Heller ,  Hadas Oshinsky

IPC: G06F3/06 ,  G11C14/00 ,  G06F13/16

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0655 ,  G06F3/068 ,  G06F3/0688 ,  G06F13/1673 ,  G11C14/00

Abstract: A storage system uses consumption of transfer RAM as a trigger to enter and exit burst mode. In one embodiment, the storage system stores, in volatile memory, data to be written in non-volatile memory; monitors an allocation level of the volatile memory to determine a first amount of time that the allocation level is at a first level and a second amount of time that the allocation level is at second level; enters burst mode when a ratio of the first amount of time and the second amount of time is above a first threshold; and exits burst mode when the ratio of the first amount of time and the second amount of time is below a second threshold. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

公开(公告)号：US10534709B2

公开(公告)日：2020-01-14

申请号：US15252251

申请日：2016-08-31

Applicant: SanDisk Technologies LLC

Inventor： Hadas Oshinsky ,  Rotem Sela ,  Amir Shaharabany

IPC: G06F12/0804 ,  G06F12/0868

Abstract: A data storage device includes a write cache, a non-volatile memory and a controller coupled to the write cache and to the non-volatile memory. The controller is configured to, responsive to receiving a plurality of flush commands, write all data from the write cache to the non-volatile memory while executing fewer than all of the plurality of flush commands.

公开(公告)号：US20180060232A1

公开(公告)日：2018-03-01

申请号：US15252251

申请日：2016-08-31

Applicant: SanDisk Technologies LLC

Inventor： Hadas Oshinsky ,  Rotem Sela ,  Amir Shaharabany

IPC: G06F12/0804 ,  G06F3/06

CPC classification number: G06F12/0804 ,  G06F12/0868 ,  G06F2212/1032

Abstract: A data storage device includes a write cache, a non-volatile memory and a controller coupled to the write cache and to the non-volatile memory. The controller is configured to, responsive to receiving a plurality of flush commands, write all data from the write cache to the non-volatile memory while executing fewer than all of the plurality of flush commands.

公开(公告)号：US09870174B2

公开(公告)日：2018-01-16

申请号：US15404487

申请日：2017-01-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Amir Shaharabany ,  Hadas Oshinsky

IPC: G06F3/06 ,  G11C11/56

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0611 ,  G06F3/0619 ,  G06F3/0626 ,  G06F3/064 ,  G06F3/065 ,  G06F3/0665 ,  G06F3/0679 ,  G06F2206/1014 ,  G11C11/5628

Abstract: An apparatus includes a memory storing a group of pages of data. An interface of the apparatus is configured to send, to a data storage device (DSD) from a first command queue, a first instruction of instructions to store the group of pages to the DSD using a logical address corresponding to the group of pages. The interface is further configured to send, to the DSD from a second command queue, a second instruction of the instructions to write the group of pages to the DSD using the logical address. Sending a first copy of the group of pages in association with the first instruction and sending a second copy of the group of pages in association with the second instruction enables a multi-stage programming operation to be performed at the DSD without storing the group of pages at the DSD between stages of the multi-stage programming operation.

公开(公告)号：US20170371588A1

公开(公告)日：2017-12-28

申请号：US15189684

申请日：2016-06-22

Applicant: SanDisk Technologies LLC

Inventor： Amir Shaharabany ,  Yoav Markus ,  Tal Heller ,  Hadas Oshinsky

IPC: G06F3/06 ,  G11C14/00

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0655 ,  G06F3/068 ,  G06F3/0688 ,  G06F13/1673 ,  G11C14/00

Abstract: A storage system uses consumption of transfer RAM as a trigger to enter and exit burst mode. In one embodiment, the storage system stores, in volatile memory, data to be written in non-volatile memory; monitors an allocation level of the volatile memory to determine a first amount of time that the allocation level is at a first level and a second amount of time that the allocation level is at second level; enters burst mode when a ratio of the first amount of time and the second amount of time is above a first threshold; and exits burst mode when the ratio of the first amount of time and the second amount of time is below a second threshold. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.

公开(公告)号：US10126970B2

公开(公告)日：2018-11-13

申请号：US15348875

申请日：2016-11-10

Applicant: SanDisk Technologies LLC

Inventor： Amir Shaharabany ,  Hadas Oshinsky ,  Yacov Duzly ,  James Fitzpatrick

IPC: G06F11/00 ,  G06F3/06 ,  G06F11/07

Abstract: Systems, methods and/or devices are used to pair metablocks in a non-volatile storage device. In one aspect, a method of data organization of a memory device includes, writing data to and reading data from respective metablocks in a set of metablocks. The method further includes while performing said writing and reading: (1) accessing one or more management data structures in controller memory, identifying two or more metablock pairs; (2) accessing and updating metablock status information indicating which metablocks of the set of metablocks are closed, free and open; and (3) accessing and updating a valid count, corresponding to a number of sub-block memory units having valid data for each of a plurality of metablocks in the set of metablocks.

公开(公告)号：US20170344295A1

公开(公告)日：2017-11-30

申请号：US15168835

申请日：2016-05-31

Applicant: SanDisk Technologies LLC

Inventor： Liron Sheffi ,  Yuval Kenan ,  Amir Shaharabany ,  Yacov Duzly

IPC: G06F3/06 ,  G06F21/62 ,  G11C16/16

CPC classification number: G06F3/0623 ,  G06F3/0601 ,  G06F3/062 ,  G06F3/0652 ,  G06F3/0688 ,  G06F11/1004 ,  G06F12/14 ,  G06F21/00 ,  G06F21/6209 ,  G06F21/78 ,  G06F21/79 ,  G06F2221/2143 ,  G11C11/5635 ,  G11C16/06 ,  G11C16/14 ,  G11C16/16 ,  G11C16/22 ,  G11C16/32

Abstract: A system and method is disclosed for fast secure destruction or erasure of data in a non-volatile memory. The method may include identifying a fast erase condition, such as an unauthorized access attempt, and then applying a fast erase process to a predetermined number of blocks of the non-volatile memory. The fast erase process may be implemented by applying an erase voltage for less than a full duration needed to place the blocks in a full erase state, but sufficient to make any data in those blocks unreadable. The system may include a non-volatile memory having a plurality of blocks and a controller configured to sequentially apply the erase voltage to a predetermined portion of the blocks for less than a time needed to fully erase those blocks such that the controller may rapidly make data unreadable without taking the full time to completely erase those blocks.

公开(公告)号：US20170168716A1

公开(公告)日：2017-06-15

申请号：US15348875

申请日：2016-11-10

Applicant: SanDisk Technologies LLC

Inventor： Amir Shaharabany ,  Hadas Oshinsky ,  Yacov Duzly ,  James Fitzpatrick

IPC: G06F3/06 ,  G06F11/07

CPC classification number: G06F3/064 ,  G06F3/0616 ,  G06F3/0679 ,  G06F11/0727 ,  G06F11/0751 ,  G06F11/0787 ,  G06F11/079 ,  G06F11/08 ,  G11C29/52 ,  G11C2029/4402

Abstract: Systems, methods and/or devices are used to pair metablocks in a non-volatile storage device. In one aspect, a method of data organization of a memory device includes, writing data to and reading data from respective metablocks in a set of metablocks. The method further includes while performing said writing and reading: (1) accessing one or more management data structures in controller memory, identifying two or more metablock pairs; (2) accessing and updating metablock status information indicating which metablocks of the set of metablocks are closed, free and open; and (3) accessing and updating a valid count, corresponding to a number of sub-block memory units having valid data for each of a plurality of metablocks in the set of metablocks.