公开(公告)号：US09891844B2

公开(公告)日：2018-02-13

申请号：US15485158

申请日：2017-04-11

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Tien Truong

IPC: G06F12/12 ,  G06F3/06 ,  G06F12/02

CPC classification number: G06F3/0616 ,  G06F3/0629 ,  G06F3/0634 ,  G06F3/0638 ,  G06F3/0653 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/1036 ,  G06F2212/1044 ,  G06F2212/7204

Abstract: Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes determining a current endurance metric for a plurality of non-volatile memory portions configured to store data encoded in a first encoding format and determining an estimated endurance metric for the plurality of non-volatile memory portions (e.g., corresponding to estimated endurance after reconfiguration of the one or more portions to store data encoded in a second encoding format), and in accordance with a determination that reconfiguration criteria are satisfied (e.g., the estimated endurance metric comprises an improvement over the current endurance metric), reconfiguring the one or more portions to store data encoded in the second encoding format.

公开(公告)号：US20170168713A1

公开(公告)日：2017-06-15

申请号：US15441808

申请日：2017-02-24

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Tien Truong

IPC: G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0616 ,  G06F3/0629 ,  G06F3/0644 ,  G06F3/0655 ,  G06F3/0688 ,  G06F12/02

Abstract: Systems, methods, and/or devices are used to implement variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format and having a first storage density) of a plurality of non-volatile memory portions of a storage device. In response to detecting the trigger condition and in accordance with a first determination that a projected amount of over-provisioning (e.g., corresponding to over-provisioning for the storage device after reconfiguring the one or more non-volatile memory portions to store data encoded in a second encoding format and having a second storage density) meets predefined over-provisioning criteria, the method includes reconfiguring the one or more non-volatile memory portions to store data encoded in the second encoding format.

公开(公告)号：US09864525B2

公开(公告)日：2018-01-09

申请号：US15441808

申请日：2017-02-24

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Tien Truong

IPC: G06F12/10 ,  G06F3/06

CPC classification number: G06F3/061 ,  G06F3/0616 ,  G06F3/0629 ,  G06F3/0644 ,  G06F3/0655 ,  G06F3/0688 ,  G06F12/02

Abstract: Systems, methods, and/or devices are used to implement variable bit encoding per NAND flash cell to extend life of flash-based storage devices and preserve over-provisioning. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format and having a first storage density) of a plurality of non-volatile memory portions of a storage device. In response to detecting the trigger condition and in accordance with a first determination that a projected amount of over-provisioning (e.g., corresponding to over-provisioning for the storage device after reconfiguring the one or more non-volatile memory portions to store data encoded in a second encoding format and having a second storage density) meets predefined over-provisioning criteria, the method includes reconfiguring the one or more non-volatile memory portions to store data encoded in the second encoding format.

公开(公告)号：US20170309344A1

公开(公告)日：2017-10-26

申请号：US15640563

申请日：2017-07-02

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Deepanshu Dutta ,  Arash Hazeghi ,  Huai-Yuan Tseng ,  Cynthia Hsu ,  Navneeth Kankani

IPC: G11C16/34 ,  G11C16/32 ,  G11C16/04

CPC classification number: G11C16/3459 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/32

Abstract: Systems and methods for improving the reliability of data stored in memory cells are described. To mitigate the effects of trapped electrons after one or more programming pulses have been applied to memory cells, a delay between the one or more programming pulses and subsequent program verify pulses may be set based on a chip temperature, the number of the one or more programming pulses that were applied to the memory cells, and/or the programming voltage that was applied to the memory cells during the one or more programming pulses. To mitigate the effects of residual electrons after one or more program verify pulses have been applied to memory cells, a delay between the one or more program verify pulses and subsequent programming pulses may be set based on a chip temperature and/or the programming voltage to be applied to the memory cells during the subsequent programming pulses.

公开(公告)号：US20170220269A1

公开(公告)日：2017-08-03

申请号：US15485158

申请日：2017-04-11

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Tien Truong

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0629 ,  G06F3/0634 ,  G06F3/0638 ,  G06F3/0653 ,  G06F3/0688 ,  G06F12/0246 ,  G06F2212/1036 ,  G06F2212/1044 ,  G06F2212/7204

Abstract: Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes determining a current endurance metric for a plurality of non-volatile memory portions configured to store data encoded in a first encoding format and determining an estimated endurance metric for the plurality of non-volatile memory portions (e.g., corresponding to estimated endurance after reconfiguration of the one or more portions to store data encoded in a second encoding format), and in accordance with a determination that reconfiguration criteria are satisfied (e.g., the estimated endurance metric comprises an improvement over the current endurance metric), reconfiguring the one or more portions to store data encoded in the second encoding format.

公开(公告)号：US10467134B2

公开(公告)日：2019-11-05

申请号：US15247910

申请日：2016-08-25

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Truong ,  Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G06F12/02

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for annealing non-volatile memory. A controller identifies one or more life cycle characteristics of a non-volatile storage element. The controller selects an anneal duration and an anneal temperature for annealing the non-volatile storage element. The anneal duration and the anneal temperature are based on the one or more life cycle characteristics. The controller anneals the non-volatile storage element using the selected anneal duration and anneal temperature.

公开(公告)号：US10026492B2

公开(公告)日：2018-07-17

申请号：US15640563

申请日：2017-07-02

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Deepanshu Dutta ,  Arash Hazeghi ,  Huai-Yuan Tseng ,  Cynthia Hsu ,  Navneeth Kankani

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/32

Abstract: Systems and methods for improving the reliability of data stored in memory cells are described. To mitigate the effects of trapped electrons after one or more programming pulses have been applied to memory cells, a delay between the one or more programming pulses and subsequent program verify pulses may be set based on a chip temperature, the number of the one or more programming pulses that were applied to the memory cells, and/or the programming voltage that was applied to the memory cells during the one or more programming pulses. To mitigate the effects of residual electrons after one or more program verify pulses have been applied to memory cells, a delay between the one or more program verify pulses and subsequent programming pulses may be set based on a chip temperature and/or the programming voltage to be applied to the memory cells during the subsequent programming pulses.

公开(公告)号：US20180060230A1

公开(公告)日：2018-03-01

申请号：US15247910

申请日：2016-08-25

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Linh Truong ,  Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7205 ,  G06F2212/7206 ,  G06F2212/7207

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for annealing non-volatile memory. A controller identifies one or more life cycle characteristics of a non-volatile storage element. The controller selects an anneal duration and an anneal temperature for annealing the non-volatile storage element. The anneal duration and the anneal temperature are based on the one or more life cycle characteristics. The controller anneals the non-volatile storage element using the selected anneal duration and anneal temperature.

公开(公告)号：US09761290B1

公开(公告)日：2017-09-12

申请号：US15247912

申请日：2016-08-25

Applicant: SanDisk Technologies LLC

Inventor： Navneeth Kankani ,  Ning Ye ,  Suresh Upadhyayula ,  Sarath Puthenthermadam ,  Deepanshu Dutta

IPC: G11C5/02 ,  G11C7/20 ,  H01L23/34 ,  H01L23/367 ,  H01L23/373 ,  H01L23/467 ,  G11C7/24

CPC classification number: G11C7/20 ,  G11C5/02 ,  G11C5/04 ,  G11C7/04 ,  G11C7/24 ,  G11C16/20 ,  G11C29/52 ,  G11C2029/0409 ,  H01L23/345 ,  H01L23/3675 ,  H01L23/3736 ,  H01L23/467 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83805 ,  H01L2924/15311 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for preventing overheating, for annealing non-volatile memory. An apparatus may include an array of non-volatile storage elements. A heating element may be configured to heat a first set of the non-volatile storage elements to anneal the first set of non-volatile storage elements. A heat shield or cooling element may be configured to prevent a second set of the non-volatile storage elements from overheating during annealing of the first set of non-volatile storage elements, to mitigate data errors for data stored on the second set of non-volatile storage elements.