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公开(公告)号:US20240385524A1
公开(公告)日:2024-11-21
申请号:US18664981
申请日:2024-05-15
Applicant: SEMES CO., LTD.
Inventor: Hee Man AHN , Gyeong Won SONG , Jae Seung YU , Sol AN , Sung Hun EOM
Abstract: Disclosed are an apparatus and a method for treating a substrate, and more particularly, an apparatus and a method for heat treating a substrate. The apparatus includes: a heating unit provided in the inner space, and providing a treatment space in which a heating process of the substrate is performed; a transfer plate positioned within the inner space, and movable between an inner position for loading the substrate into the treatment space or for unloading the substrate from the treatment space and an outer position provided outside the heating unit; and a gas injection unit positioned within the inner space, and for injecting atmosphere gas toward the substrate at the outer position.
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公开(公告)号:US20240213059A1
公开(公告)日:2024-06-27
申请号:US18524726
申请日:2023-11-30
Applicant: SEMES CO., LTD.
Inventor: Hee Man AHN , Sung Hun EOM , Gyeong Won SONG , Jae Seung YU
IPC: H01L21/67 , G03F7/00 , H01L21/673
CPC classification number: H01L21/67225 , G03F7/70033 , H01L21/67023 , H01L21/67098 , H01L21/6732
Abstract: Disclosed are a substrate processing apparatus and method in which in a heat-treatment process such as a baking process, a surrounding humidity environment may be precisely controlled based on photoresist for extreme ultraviolet (EUV) applied on the substrate. The substrate processing apparatus includes a housing having a treatment space defined therein; a support unit for supporting, thereon, a substrate received in the treatment space; and a gas supply unit configured to alternately supply a first gas and a second gas into the treatment space in response to photoresist (PR) for extreme ultraviolet (EUV) applied onto the substrate.
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公开(公告)号:US20220163891A1
公开(公告)日:2022-05-26
申请号:US17522007
申请日:2021-11-09
Applicant: SEMES CO., LTD.
Inventor: Ki Sang EUM , Jin Ho CHOI , Sun Wook JUNG , Byoung Doo CHOI , Hee Man AHN , Si Eun KIM
IPC: G03F7/16
Abstract: An apparatus for treating a substrate includes a treating vessel having an inner space, a support unit that supports and rotates the substrate in the inner space, and an exhaust unit that releases an air flow in the inner space. The exhaust unit includes an air-flow guide duct into which the air flow is introduced in a tangential direction with respect to a rotating direction of the substrate supported on the support unit.
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公开(公告)号:US20230408200A1
公开(公告)日:2023-12-21
申请号:US18143273
申请日:2023-05-04
Applicant: SEMES CO., LTD.
Inventor: Ju Mi LEE , Gyeong Won SONG , Min Hee CHO , Byung Hwi KIM , Chun Woo PARK , Hee Man AHN
CPC classification number: F27D9/00 , G03F7/40 , F27D2009/0078
Abstract: The substrate processing apparatus of the present invention comprises a hot plate for heating a substrate; and a cooling unit for cooling the hot plate; wherein the cooling unit includes a support plate having a space formed between the support plate and the hot plate, and a plurality of nozzles installed on the support plate and for supplying cooling gas to a bottom surface of the hot plate, wherein an outdoor air inlet passage provided in a through structure is provide in the support plate, wherein a portion of the outdoor air inlet passage forms a first region, through which a cable passes, and the remaining portion forms a second region, through which the cable does not pass and outdoor air introduces.
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公开(公告)号:US20220205090A1
公开(公告)日:2022-06-30
申请号:US17564285
申请日:2021-12-29
Applicant: SEMES CO., LTD.
Inventor: Ju Won KIM , Yang Yeol RYU , Hee Man AHN , Jun Ho SEO , Dong Woon PARK , Sang Pil YOON
IPC: C23C16/44 , H01L21/687 , H01L21/67
Abstract: An apparatus for processing a substrate includes a first processing unit configured to have a first processing container having a first inner space and a first support unit supporting and rotating the substrate in the first inner space; a second processing unit configured to have a second processing container having a second inner space and a second support unit supporting and rotating the substrate in the second inner space; an exhaust unit configured to exhaust the first and the second inner space; a first exhaust pipe configured to have a first exhaust port for introducing atmosphere of the first inner space and exhaust the atmosphere introduced through the first exhaust port to the integrated duct; and a second exhaust pipe configured to have a second exhaust port for introducing atmosphere of the second inner space and exhaust the atmosphere introduced through the second exhaust port to the integrated duct.
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公开(公告)号:US20250096007A1
公开(公告)日:2025-03-20
申请号:US18882906
申请日:2024-09-12
Applicant: SEMES CO., LTD.
Inventor: Jae Seung YU , Sung Hun EOM , Hee Man AHN , Gyeong Won SONG , Gu Won SEON , Sol AN
IPC: H01L21/324 , G03F7/16 , H01L21/033
Abstract: A method of treating a substrate treats a substrate by using a substrate treating apparatus that includes a main supply line connected to a humidified gas supply line and a dry gas supply line, having a first region in which a first heater is installed, and a second region located downstream of the first region. The method includes a heating operation of heating the second region with the dry gas heated in the first region by supplying the dry gas into the main supply line in a state where the first heater is controlled to heat the first region; and a substrate treating operation of supplying the humidified gas into the main supply line after the heating operation and allowing the humidified gas to pass through the first region and the second region and to be supplied into the treatment space to treat the substrate disposed in the treatment space.
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公开(公告)号:US20240231246A9
公开(公告)日:2024-07-11
申请号:US18377300
申请日:2023-10-05
Applicant: SEMES CO., LTD.
Inventor: Minhee CHO , Hee Man AHN , Gyeong Won SONG , Jumi LEE , Chun Woo PARK , Byung Hwi KIM
IPC: G03F7/00
CPC classification number: G03F7/70875
Abstract: A substrate treatment apparatus according to an aspect of the present invention includes: a support plate that supports a substrate and is provided with a heater member for heating the substrate; and a cooling unit for forcedly cooling the support plate, wherein the cooling unit includes: a cooling housing to provide a cooling space; a plurality of gas feed nozzles that is arranged in the cooling housing and supplies cooling gas toward the heater member; and a plurality of gas feed lines that is directly connected to the gas feed nozzles and supplies the cooling gas transferred from the outside to the gas feed nozzles.
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公开(公告)号:US20230014205A1
公开(公告)日:2023-01-19
申请号:US17862601
申请日:2022-07-12
Applicant: SEMES CO., LTD.
Inventor: Kang Sul KIM , Hee Man AHN
Abstract: The present invention provides a substrate treating apparatus, including: a treatment container having a treatment space therein; a support unit for supporting and rotating the substrate in the treatment space; and a liquid supply unit for supplying a liquid onto the substrate, in which wherein the support unit includes: a body on which the substrate is seated; and a support shaft coupled to the body, and an upper surface of the body is provided with a central portion including a center of the body and an edge portion surrounding the central portion, and a vacuum hole is formed in the central portion, and a groove is formed in the edge portion.
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公开(公告)号:US20250062125A1
公开(公告)日:2025-02-20
申请号:US18792771
申请日:2024-08-02
Applicant: SEMES CO., LTD.
Inventor: Gyeong Won SONG , Hee Man AHN , Sung Hun EOM , Jae Seung YU , Gu Won SEON
IPC: H01L21/033 , H01L21/324 , H01L21/67
Abstract: Disclosed is a substrate processing method including: a substrate loading operation of loading a substrate into a processing space provided by a body; a heating operation of placing the substrate, which has been loaded into the processing space, on a heating chuck and heating the substrate; and an atmosphere changing operation of changing an atmosphere of the processing space, in which the atmosphere changing operation includes: a gas discharging operation of injecting atmosphere changing gas in a state where the substrate is located closer to a baffle than in the heating operation, in which the baffle is provided on a top side of the heating chuck to face the heating chuck and injects the atmosphere changing gas; and a substrate lowering operation of lowering and placing the substrate onto the heating chuck while maintaining the injection of the atmosphere changing gas.
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公开(公告)号:US20240222165A1
公开(公告)日:2024-07-04
申请号:US18539634
申请日:2023-12-14
Applicant: SEMES CO., LTD.
Inventor: Hee Man AHN , Gyeong Won SONG , Min Hee CHO , Ju Mi LEE , Byung Hwi KIM , Chun Woo PARK
IPC: H01L21/67 , H01L21/677
CPC classification number: H01L21/67225 , H01L21/67017 , H01L21/67051 , H01L21/67098 , H01L21/67742
Abstract: The inventive concept provides a substrate treating apparatus which is cool a support plate having a heater faster than a conventional substrate treating apparatus. The substrate treating apparatus includes a housing providing a treating space therein; and a support unit configured to support a substrate at the treating space. The support unit includes a heater member provided at the support plate to heat the substrate and a cooling unit configured to cool the heater member. The cooling unit includes a first gas supply nozzle positioned under an edge of the heater member for supplying a cooling gas to a center direction of a bottom surface of the heater member and a second gas supply nozzle positioned under a center of the heater member for supplying the cooling gas in an edge direction of the bottom surface of the heater member.
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