公开(公告)号：US11954276B2

公开(公告)日：2024-04-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.

公开(公告)号：US11862454B2

公开(公告)日：2024-01-02

申请号：US17377674

申请日：2021-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L21/02 ,  H01L21/425 ,  H01L29/49 ,  H01L27/12 ,  H01L21/473 ,  H01L21/768

CPC classification number: H01L29/7869 ,  H01L21/0234 ,  H01L21/0262 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/425 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/473 ,  H01L21/76826 ,  H01L21/76832

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

公开(公告)号：US11682733B2

公开(公告)日：2023-06-20

申请号：US17330463

申请日：2021-05-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/04 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L21/28 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/78696

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US11380795B2

公开(公告)日：2022-07-05

申请号：US16582225

申请日：2019-09-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US11282865B2

公开(公告)日：2022-03-22

申请号：US16688000

申请日：2019-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786 ,  H01L29/66

Abstract: A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.

公开(公告)号：US11038065B2

公开(公告)日：2021-06-15

申请号：US16704416

申请日：2019-12-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki Oikawa ,  Nobuharu Ohsawa ,  Masami Jintyou ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/28 ,  H01L29/49 ,  H01L29/04 ,  H01L29/45

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US10916430B2

公开(公告)日：2021-02-09

申请号：US15654110

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L21/285 ,  H01L23/485 ,  H01L21/28 ,  H01L27/108 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  C23F1/38

Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

公开(公告)号：US10818795B2

公开(公告)日：2020-10-27

申请号：US16182075

申请日：2018-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device comprising a pixel portion comprising a capacitor and a transistor is provided. The capacitor comprises a first oxide semiconductor film and a transparent conductive material. The transistor comprises a second oxide semiconductor film, a source electrode, and a drain electrode. The transistor is electrically connected to the capacitor. The capacitor is provided to overlap with a first opening portion in an insulating film and a second opening portion in an organic resin film. The transparent conductive material comprises a region over the organic resin film. The second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region. Each of a carrier density of the first oxide semiconductor film and a carrier density of the first region is higher than a carrier density of the channel formation region.

公开(公告)号：US10763282B2

公开(公告)日：2020-09-01

申请号：US16522912

申请日：2019-07-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US10680116B2

公开(公告)日：2020-06-09

申请号：US15907315

申请日：2018-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.