公开(公告)号：US20140217541A1

公开(公告)日：2014-08-07

申请号：US14247084

申请日：2014-04-07

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Michel Marty ,  François Roy ,  Jens Prima

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

公开(公告)号：US20170221948A1

公开(公告)日：2017-08-03

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US09985119B2

公开(公告)日：2018-05-29

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US08963273B2

公开(公告)日：2015-02-24

申请号：US14247084

申请日：2014-04-07

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Michel Marty ,  François Roy ,  Jens Prima

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

公开(公告)号：US20170092678A1

公开(公告)日：2017-03-30

申请号：US15280544

申请日：2016-09-29

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Romain Girard Desprolet ,  Michel Marty ,  Salim Boutami ,  Sandrine Lhostis

IPC: H01L27/146 ,  G02B5/20 ,  H01L21/311

CPC classification number: H01L27/14625 ,  B82Y20/00 ,  G02B5/008 ,  G02B5/201 ,  G02B5/204 ,  G02B2207/101 ,  G02F1/133509 ,  G02F1/133516 ,  H01L21/311 ,  H01L27/14621 ,  H01L27/14685

Abstract: A spectral filter is manufactured using a process wherein a first rectangular bar is formed within a first layer made of a first material, said first rectangular bar being made of a second material having a different optical index. The process further includes, in a second layer over the first layer, a second rectangular bar made of the second material. The second rectangular bar is positioned in contact with the first rectangular bar. The second layer is also made of the first material.

公开(公告)号：US09450000B2

公开(公告)日：2016-09-20

申请号：US14462724

申请日：2014-08-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey ,  Salim Boutami

IPC: H01L31/062 ,  H01L27/144 ,  H01L31/0232 ,  H01L27/146 ,  H01L31/107 ,  H01L29/16 ,  H01L29/49 ,  H01L29/66 ,  H01L31/101 ,  H01L31/18

CPC classification number: H01L27/1443 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/16 ,  H01L29/4916 ,  H01L29/6656 ,  H01L31/02327 ,  H01L31/1016 ,  H01L31/107 ,  H01L31/1804

Abstract: A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.

Abstract translation: 光电二极管包括布置在光电二极管半导体衬底的光接收表面上的至少一个中心衬垫。 衬垫由第一材料制成，并且包括由具有与第一材料不同的光学折射率的第二材料制成的间隔件包围的侧壁。 焊盘的横向尺寸小于光电二极管的工作波长。 第一和第二材料都对该工作波长是透明的。 焊盘和间隔物同时形成栅电极和MOS晶体管的侧壁间隔物。

公开(公告)号：US20150054042A1

公开(公告)日：2015-02-26

申请号：US14462724

申请日：2014-08-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Sebastien Jouan ,  Laurent Frey ,  Salim Boutami

IPC: H01L27/144 ,  H01L31/101 ,  H01L29/49 ,  H01L29/66 ,  H01L29/16 ,  H01L31/18 ,  H01L31/107

CPC classification number: H01L27/1443 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/16 ,  H01L29/4916 ,  H01L29/6656 ,  H01L31/02327 ,  H01L31/1016 ,  H01L31/107 ,  H01L31/1804

Abstract: A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.

Abstract translation: 光电二极管包括布置在光电二极管半导体衬底的光接收表面上的至少一个中心衬垫。 衬垫由第一材料制成，并且包括由具有与第一材料不同的光学折射率的第二材料制成的间隔件包围的侧壁。 焊盘的横向尺寸小于光电二极管的工作波长。 第一和第二材料都对该工作波长是透明的。 焊盘和间隔物同时形成栅电极和MOS晶体管的侧壁间隔物。

公开(公告)号：US08975730B2

公开(公告)日：2015-03-10

申请号：US13622573

申请日：2012-09-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Michel Marty ,  Sebastien Jouan

IPC: H01L29/06 ,  H01L21/768 ,  H01L21/762

CPC classification number: H01L21/76898 ,  H01L21/76251

Abstract: A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection layer. The vertical stack has a free lateral face on which the lower region, the upper region and the protection layer are exposed.

Abstract translation: 一种器件和相应的制造方法包括在下部区域和上部区域之间具有中间层的垂直堆叠。 中间层由保护层延伸。 垂直堆叠具有自由侧面，下部区域，上部区域和保护层暴露在该侧面上。

公开(公告)号：US09520435B2

公开(公告)日：2016-12-13

申请号：US14840665

申请日：2015-08-31

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Nayera Ahmed ,  Michel Marty

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: An image sensor including a semiconductor layer; a stack of insulating layers resting on the back side of the semiconductor layer; a conductive layer portion extending along part of the height of the stack and flush with the exposed surface of the stack; laterally-insulated conductive fingers extending through the semiconductor layer from its front side and penetrating into said layer portion; laterally-insulated conductive walls separating pixel areas, these walls extending through the semiconductor layer from its front side and having a lower height than the fingers; and an interconnection structure resting on the front side of the semiconductor layer and including vias in contact with the fingers.

Abstract translation: 包括半导体层的图像传感器; 沉积在半导体层的背面上的一叠绝缘层; 导电层部分，其沿所述堆叠的高度的一部分延伸并与所述堆叠的暴露表面齐平; 横向绝缘的导电指状物从其前侧延伸穿过半导体层并且穿透到所述层部分中; 分隔像素区域的横向绝缘导电壁，这些壁从其前侧延伸穿过半导体层并且具有比手指低的高度; 以及搁置在半导体层的前侧上并且包括与手指接触的通孔的互连结构。

公开(公告)号：US09299865B2

公开(公告)日：2016-03-29

申请号：US14464898

申请日：2014-08-21

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Michel Marty ,  Laurent Frey ,  Sebastien Jouan ,  Salim Boutami

IPC: H01L29/06 ,  H01L31/062 ,  H01L27/14 ,  H01L31/107 ,  H01L31/0352 ,  G01T1/24 ,  H01L31/0232 ,  H01L27/146

CPC classification number: H01L31/035236 ,  G01T1/248 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/107

Abstract: A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node).

Abstract translation: SPAD型光电二极管具有具有受光面的半导体基板。 由第一材料制成的交错条形成的格子覆盖光接收表面。 格子包括具有被由第二材料制成的间隔物覆盖的侧壁的格子开口。 然后第一和第二材料具有不同的光学指数，并且每个光学指数还小于或等于基底光学指数。 晶格的间距是光电二极管的工作波长大小的数量级。 第一和第二材料在该工作波长下是透明的。 晶格由电耦合到电连接节点（例如，偏压节点）的导电材料制成。