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公开(公告)号：US10057684B2
公开(公告)日：2018-08-21
申请号：US15636423
申请日：2017-06-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Stefano Losa , Lorenzo Tentori , Maria Carolina Turi
CPC classification number: H04R7/18 , B81B3/0054 , B81B3/0072 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81C1/00158 , B81C2201/0132 , H04R19/005 , H04R19/04
Abstract: An electroacoustic MEMS transducer, having a substrate of semiconductor material; a through cavity in the substrate; a back plate carried by the substrate through a plate anchoring structure, the back plate having a surface facing the through cavity; a fixed electrode, extending over the surface of the back plate; a membrane of conductive material, having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate through a membrane anchoring structure; and a chamber between the membrane and the back plate, peripherally delimited by the membrane anchoring structure.
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公开(公告)号：US09824882B2
公开(公告)日：2017-11-21
申请号：US14982380
申请日：2015-12-29
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide to form a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide to form a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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公开(公告)号：US09731965B1
公开(公告)日：2017-08-15
申请号：US15087732
申请日：2016-03-31
Applicant: STMicroelectronics S.R.L.
Inventor： Matteo Perletti , Pietro Petruzza , Ilaria Gelmi , Laura Maria Castoldi
IPC: B81C1/00
CPC classification number: B81C1/00888 , B81B2201/0257 , B81B2207/012
Abstract: A method of forming semiconductor devices, such as capacitive type MEMS acoustic transducers, in a semiconductor includes forming a mask layer on a back surface of the semiconductor wafer and removing first etch portions of the mask layer and scribe trench portions of the mask layer. Each scribe trench portion is positioned in the mask layer to define a corresponding scribe boundary of a plurality of the semiconductor devices being formed in the semiconductor wafer. Etching the semiconductor wafer through the first etch portions and the scribe trench portions may be done simultaneously to form external back chambers and scribe trenches, respectively, in the semiconductor wafer. The semiconductor wafer is then cut along cutting lines in the scribe trenches to singulate individual MEMS acoustic transducers. The etching through the first and second etch portions and the scribe trench portions are dry etching of the semiconductor substrate in one embodiment.
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4.发明申请公开(公告)号：US20140231937A1
公开(公告)日：2014-08-21
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。
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公开(公告)号：US10555091B2
公开(公告)日：2020-02-04
申请号：US16128288
申请日：2018-09-11
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Federico Vercesi , Silvia Adorno , Giorgio Allegato
Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10433068B2
公开(公告)日：2019-10-01
申请号：US15365590
申请日：2016-11-30
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Igor Varisco , Luca Lamagna , Silvia Adorno , Gabriele Gattere , Carlo Valzasina , Sebastiano Conti
Abstract: A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.
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公开(公告)号：US20170313582A1
公开(公告)日：2017-11-02
申请号：US15651444
申请日：2017-07-17
Applicant: STMicroelectronics S.r.l.
Inventor： Matteo Perletti , Pietro Petruzza , Ilaria Gelmi , Laura Maria Castoldi
IPC: B81C1/00
CPC classification number: B81C1/00888 , B81B2201/0257 , B81B2207/012
Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.
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公开(公告)号：US09758373B2
公开(公告)日：2017-09-12
申请号：US14262437
申请日：2014-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Losa , Raffaella Pezzuto , Roberto Campedelli , Matteo Perletti , Luigi Esposito , Mikel Azpeitia Urquia
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
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公开(公告)号：US10322931B2
公开(公告)日：2019-06-18
申请号：US15651444
申请日：2017-07-17
Applicant: STMicroelectronics S.r.l.
Inventor： Matteo Perletti , Pietro Petruzza , Ilaria Gelmi , Laura Maria Castoldi
IPC: B81C1/00
Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.
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10.发明申请公开(公告)号：US20180152788A1
公开(公告)日：2018-05-31
申请号：US15636423
申请日：2017-06-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Stefano Losa , Lorenzo Tentori , Maria Carolina Turi
CPC classification number: H04R7/18 , B81B3/0054 , B81B2201/0257 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81C1/00158 , B81C2201/0132 , H04R19/005 , H04R19/04
Abstract: An electroacoustic MEMS transducer, having a substrate of semiconductor material; a through cavity in the substrate; a back plate carried by the substrate through a plate anchoring structure, the back plate having a surface facing the through cavity; a fixed electrode, extending over the surface of the back plate; a membrane of conductive material, having a central portion facing the fixed electrode and a peripheral portion fixed to the surface of the back plate through a membrane anchoring structure; and a chamber between the membrane and the back plate, peripherally delimited by the membrane anchoring structure.
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