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公开(公告)号：US20240213303A1
公开(公告)日：2024-06-27
申请号：US18347938
申请日：2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun PARK , Haeryong KIM , Euncheol DO , Cheheung KIM , Jooho LEE
CPC classification number: H01L28/56 , H01G4/085 , H01G4/33 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/94 , H10B12/31 , H01G4/008
Abstract: Provided is a capacitor, a semiconductor device including the same, and an electronic apparatus including the semiconductor device, wherein the capacitor includes a first electrode including a first metal ion, a second electrode arranged spaced apart from the first electrode, a dielectric layer provided between the first electrode and the second electrode, and an interfacial layer provided between the first electrode and the dielectric layer and including a compound represented by MxOyNz, in which a diffusion energy barrier value of M is equal to or greater than a diffusion energy barrier value of the first metal ion.
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2.发明公开公开(公告)号：US20230357043A1
公开(公告)日：2023-11-09
申请号：US18356287
申请日：2023-07-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung JO , Chan KWAK , Hyungjun KIM , Euncheol DO , Hyeoncheol PARK , Changsoo LEE
IPC: C01G33/00 , C04B35/626 , C04B35/645 , H10B12/00
CPC classification number: C01G33/006 , H01L28/40 , C04B35/6261 , C04B35/62695 , C04B35/645 , H10B12/37 , C01P2002/72 , C01P2006/40 , C01P2002/76 , C01P2006/10
Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
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3.发明申请公开(公告)号：US20200165142A1
公开(公告)日：2020-05-28
申请号：US16409096
申请日：2019-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won JUNG , Chan KWAK , Euncheol DO , Hyeon Cheol PARK , Daejin YANG , Taewon JEONG , Giyoung JO
Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
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公开(公告)号：US20230080072A1
公开(公告)日：2023-03-16
申请号：US17715389
申请日：2022-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC: H01L49/02 , H01L27/108
Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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5.发明申请FLEXIBLE ELECTRODE ASSEMBLY AND ELECTROCHEMICAL DEVICE HAVING THE ELECTRODE ASSEMBLY 有权具有电极组件的柔性电极组件和电化学装置公开(公告)号：US20160104871A1
公开(公告)日：2016-04-14
申请号：US14824408
申请日：2015-08-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moonseok KWON , Jaeman CHOI , Euncheol DO , Jonghwan PARK , Yoonhoi LEE , Jaejun CHANG , Yeonji CHUNG
CPC classification number: H01M2/0275 , H01M2/14 , H01M10/04 , H01M10/0436 , H01M2220/30
Abstract: An electrode assembly includes an electrode stack structure including a first electrode assembly sheet having flexibility and a second electrode assembly sheet having flexibility, where and the first and second electrode assemblies are alternately disposed one on another, and a binding unit which binds a portion of the electrode stack structure. The first electrode assembly sheet includes first and second separator films disposed to face each other, a first electrode sheet which is disposed between the first and second separator films and includes a first electrode collector and a first active material layer, and a first confining unit which restricts a movement of the first electrode sheet with respect to the first and second separator films.
Abstract translation: 电极组件包括电极堆叠结构，该电极堆叠结构包括具有柔性的第一电极组件片和具有柔性的第二电极组件片，其中第一和第二电极组件彼此交替地布置;以及绑定单元， 电极堆叠结构。 第一电极组件片包括彼此相对设置的第一和第二分离膜，设置在第一和第二分离膜之间并包括第一电极集合体和第一活性物质层的第一电极片和第一限制单元， 限制第一电极片相对于第一和第二隔膜的移动。
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Patent Agency Ranking
6.发明申请COMPLEX ELECTRODE ASSEMBLY INCLUDING PLURALITY OF ELECTRODE ASSEMBLIES AND ELECTROCHEMICAL DEVICE COMPRISING THE COMPLEX ELECTRODE ASSEMBLY 审中-公开复合电极组件，包括电极组件的多重性和包含复合电极组件的电化学装置公开(公告)号：US20160099456A1
公开(公告)日：2016-04-07
申请号：US14876003
申请日：2015-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moonseok KWON , Jaeman CHOI , Kuntae KWON , Euncheol DO , Yeonil LEE
IPC: H01M2/26 , H01M10/04 , H01M10/0525
Abstract: A complex electrode assembly includes a first sheet-type wiring which extends in a lengthwise direction of the first sheet-type wiring and comprises a sheet region of which a width that is perpendicular to the lengthwise direction is greater than a thickness that is perpendicular to the lengthwise direction and a width direction of the first sheet-type wiring, and electrode assemblies which are arranged separate from each other in the lengthwise direction of the first sheet-type wiring and are electrically connected to the first sheet-type wiring. The first sheet-type wiring may be disposed to face an outer surface of each of the electrode assemblies.
Abstract translation: 复合电极组件包括：第一片状布线，其在第一片状布线的长度方向上延伸，并且包括其垂直于长度方向的宽度大于垂直于该纵向方向的厚度的片区域 长度方向和第一片状布线的宽度方向，以及电极组件，其在第一片状布线的长度方向上彼此分离配置，并与第一片状布线电连接。 第一片状布线可以设置成面对每个电极组件的外表面。
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公开(公告)号：US20240387611A1
公开(公告)日：2024-11-21
申请号：US18789832
申请日：2024-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC: H10B12/00
Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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公开(公告)号：US20230063896A1
公开(公告)日：2023-03-02
申请号：US17705818
申请日：2022-03-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Euncheol DO , Byunghoon NA , Kiyoung LEE , Jooho LEE
Abstract: Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.
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公开(公告)号：US20220085144A1
公开(公告)日：2022-03-17
申请号：US17209762
申请日：2021-03-23
Inventor： Changsoo LEE , Sangwoon LEE , Chan KWAK , Hyungjun KIM , Euncheol DO
IPC: H01L49/02 , H01L27/108
Abstract: Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions. A2-xB3-yO10-z In Formula 1, A, B, x, y, and z are disclosed in the specification.
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公开(公告)号：US20220165840A1
公开(公告)日：2022-05-26
申请号：US17306310
申请日：2021-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjun KIM , Changsoo LEE , Chan KWAK , Euncheol DO
IPC: H01L49/02
Abstract: Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RAMBOC where R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3
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