公开(公告)号：US20220231082A1

公开(公告)日：2022-07-21

申请号：US17716492

申请日：2022-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye YEON ,  Hanul YOO ,  Jihoon YUN ,  Suhyun JO

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L27/12 ,  H01L23/00 ,  H01L33/00

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US20180047780A1

公开(公告)日：2018-02-15

申请号：US15449396

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hye YEON ,  Sung Hyun SIM ,  Wan Tae LIM ,  Yong Il KIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/50

CPC classification number: H01L27/156 ,  H01L33/50

Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substrate for growth, and an insulating layer disposed between each of the plurality of semiconductor light-emitting units and a respective metal support layer.

公开(公告)号：US20190103510A1

公开(公告)日：2019-04-04

申请号：US16190538

申请日：2018-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Yong Il KIM ,  Young Soo PARK ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/08 ,  H01L33/50 ,  H01L33/58 ,  H01L25/075 ,  H01L33/38 ,  G09G3/20 ,  G09G3/32 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/08 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0756 ,  H01L33/382 ,  H01L33/46 ,  H01L33/504 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16145

Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.

公开(公告)号：US20180261738A1

公开(公告)日：2018-09-13

申请号：US15973977

申请日：2018-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Wan Tae LIM ,  Yong II KIM ,  Hye Seok NOH ,  Eun Joo SHIN ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21K9/275 ,  F21S8/02 ,  F21K9/237 ,  F21Y115/10 ,  F21Y103/10 ,  F21V23/00

CPC classification number: H01L33/58 ,  F21K9/237 ,  F21K9/275 ,  F21S8/026 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L2224/11

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

公开(公告)号：US20160351764A1

公开(公告)日：2016-12-01

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo CHA ,  Wan Tae LIM ,  Yong Il KIM ,  Hye Seok NOH ,  Eun Joo SHIN ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L33/58 ,  H01L33/24 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/50 ,  H01L33/44

CPC classification number: H01L33/58 ,  F21K9/237 ,  F21K9/275 ,  F21S8/026 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L2224/11

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。

公开(公告)号：US20210167248A1

公开(公告)日：2021-06-03

申请号：US15932000

申请日：2020-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongin YANG ,  Hankyu SEONG ,  Sunghyun SIM ,  Jihye YEON ,  Hanul YOO ,  Jihoon YUN

IPC: H01L33/24 ,  H01L33/50 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15

Abstract: A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

公开(公告)号：US20210126045A1

公开(公告)日：2021-04-29

申请号：US16901451

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye YEON ,  Hanul YOO ,  Jihoon YUN ,  Suhyun JO

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/50 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L25/18 ,  H01L27/12 ,  H01L23/00

Abstract: An LED module includes light emission windows; LED cells corresponding to the light emission windows, the LED cells each including a lower and upper light emitting structure, the lower light emitting structure having an upper surface with first and second regions and having a first conductivity-type semiconductor layer, the upper light emitting structure being on the first region of the lower light emitting structure and having a second conductivity-type semiconductor layer, the LED cells including an active layer between the first and second conductivity-type semiconductor layers; a protective insulating film on a side surface of the lower light emitting structure and on the second region; a light blocking film on the protective insulating film, between the LED cells; a gap-fill insulating film on the protective insulating film between the LED cells and contacting a side surface of the upper light emitting structure; a first electrode; and a second electrode.

公开(公告)号：US20180286915A1

公开(公告)日：2018-10-04

申请号：US15788933

申请日：2017-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hye YEON ,  Han Kyu SEONG ,  Wan Tae LIM ,  Sung Hyun SIM ,  Hanul YOO

IPC: H01L27/15 ,  H01L33/22 ,  H01L33/00 ,  H01L33/38 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L27/153 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44 ,  H01L33/507 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.

公开(公告)号：US20250022867A1

公开(公告)日：2025-01-16

申请号：US18677353

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dooho JEONG ,  Taehun KIM ,  Hanul YOO ,  Taesung JANG

IPC: H01L25/18 ,  H01L23/00 ,  H01L27/15

Abstract: A display apparatus includes a circuit board including driving circuits; and a pixel array on the circuit board and including a plurality of pixels, wherein the pixel array includes LED cells having a pillar shape and including first and second conductivity-type semiconductor layers and an active layer, wherein a width thereof is 100 μm or less, and a height thereof is greater than the width; a transparent electrode on lower surfaces of the LED cells and including a cone or pyramid-shaped inclined portion; a passivation layer disposed on side surfaces of the LED cells and extending from a side surface of the LED cell to a side surface of the inclined portion of the transparent electrode.

公开(公告)号：US20190312182A1

公开(公告)日：2019-10-10

申请号：US16442870

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Tae LIM ,  Sung Hyun SIM ,  Hanul YOO ,  YONG IL KIM ,  Hye Seok NOH ,  Ji Hye YEON

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L33/56 ,  H01L27/15 ,  H01L25/075 ,  H01L33/58

Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.