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公开(公告)号：US20180261738A1
公开(公告)日：2018-09-13
申请号：US15973977
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong II KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
IPC: H01L33/58 , H01L33/50 , H01L33/44 , H01L33/00 , F21K9/275 , F21S8/02 , F21K9/237 , F21Y115/10 , F21Y103/10 , F21V23/00
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
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公开(公告)号：US20160351764A1
公开(公告)日：2016-12-01
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong Il KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。
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公开(公告)号：US20190181316A1
公开(公告)日：2019-06-13
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok NOH , Young Jin CHOI , Yong Il KIM , Han Kyu SEONG , Dong Gun LEE , Jin Sub LEE
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/156 , H01L33/0095 , H01L33/26 , H01L33/40 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2933/005 , H04N5/2256
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US20160064607A1
公开(公告)日：2016-03-03
申请号：US14698717
申请日：2015-04-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Geon Wook YOO , Sung Hyun SIM , Dong Kuk LEE , Hye Seok NOH
CPC classification number: H01L33/24 , H01L33/08 , H01L33/145 , H01L33/18 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/42 , H01L33/44
Abstract: A nanostructure semiconductor light emitting device may include: a base layer formed of a first conductivity-type semiconductor material; an insulating layer disposed on the base layer and having a plurality of openings exposing portions of the base layer; a plurality of nanocores disposed on the exposed portions of the base layer and formed of a first conductivity-type semiconductor material, each of which including a tip portion having a crystal plane different from that of a side surface thereof; a first high resistance layer disposed on the tip portion of the nanocore and formed of an oxide containing an element which is the same as at least one of elements constituting the nanocore; an active layer disposed on the first high resistance layer and the side surface of the nanocore; and a second conductivity-type semiconductor layer disposed on the active layer.
Abstract translation: 纳米结构半导体发光器件可以包括：由第一导电型半导体材料形成的基极层; 绝缘层，其设置在所述基底层上并且具有暴露所述基底层的部分的多个开口; 多个纳米孔，其设置在所述基底层的所述露出部分上并由第一导电型半导体材料形成，所述第一导电型半导体材料包括具有不同于其侧表面的晶面的尖端部分; 第一高电阻层，设置在纳米孔的尖端部分上，由含有与构成纳米孔的元素中至少一个元素相同的元素的氧化物形成; 设置在所述第一高电阻层和所述纳米孔的侧表面上的有源层; 以及设置在有源层上的第二导电型半导体层。
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Patent Agency Ranking
公开(公告)号：US20190189595A1
公开(公告)日：2019-06-20
申请号：US16008276
申请日：2018-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Hye Seok NOH , Han Kyu SEONG , Sung Hyun SIM , Ha Nul YOO
CPC classification number: H01L25/0753 , H01L27/1214 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/504 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.
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公开(公告)号：US20160049553A1
公开(公告)日：2016-02-18
申请号：US14828004
申请日：2015-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Geon Wook YOO , Mi Hyun KIM , Dong Hoon LEE , Jin Bock LEE , Je Won KIM , Hye Seok NOH , Dong Kuk LEE
CPC classification number: H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
Abstract translation: 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。
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公开(公告)号：US20190312182A1
公开(公告)日：2019-10-10
申请号：US16442870
申请日：2019-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US20180047880A1
公开(公告)日：2018-02-15
申请号：US15486982
申请日：2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wan Tae LIM , Sung Hyun SIM , Hanul YOO , YONG IL KIM , Hye Seok NOH , Ji Hye YEON
CPC classification number: H01L33/507 , H01L27/156 , H01L33/504 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
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公开(公告)号：US20170250318A1
公开(公告)日：2017-08-31
申请号：US15337215
申请日：2016-10-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Sung Hyun SIM , Wan tae LIM , Hye Seok NOH , Hanul YOO
CPC classification number: H01L33/505 , H01L27/153 , H01L33/504 , H01L33/60 , H01L2933/0033 , H01L2933/0041
Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
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