公开(公告)号：US20230117646A1

公开(公告)日：2023-04-20

申请号：US17952808

申请日：2022-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Junho JEONG ,  YoungJun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

公开(公告)号：US20220320418A1

公开(公告)日：2022-10-06

申请号：US17502411

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG ,  Eunsun NOH ,  Jeong-Heon PARK ,  YoungJun CHO

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.

公开(公告)号：US20210367142A1

公开(公告)日：2021-11-25

申请号：US16950009

申请日：2020-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Chul LEE ,  Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14 ,  G11C11/16 ,  G11C11/18

Abstract: A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.

公开(公告)号：US20240249760A1

公开(公告)日：2024-07-25

申请号：US18593293

申请日：2024-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Whankyun KIM ,  Jeong-Heon PARK ,  Heeju SHIN ,  YoungJun CHO ,  Joonmyoung LEE ,  Junho JEONG

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.

公开(公告)号：US20220127716A1

公开(公告)日：2022-04-28

申请号：US17487088

申请日：2021-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Jeongheon PARK ,  Junho JEONG

IPC: C23C14/56 ,  H01L43/12 ,  C23C14/08 ,  C23C16/40 ,  C23C16/54

Abstract: An apparatus for manufacturing a semiconductor device includes first and second process chambers in a first row in a first direction, third and fourth process chambers in a second row in the first direction, the third and fourth process chambers being spaced apart from the first and second process chambers in a second direction, and the first and third process chambers being arranged in parallel in the second direction to perform a same process, a load-lock chamber at one side of the first to fourth process chambers in the first direction, and first and second transfer chambers directly connected to each other in a third row in the first direction, the third row being between the first and second rows, and each of the first and second transfer chambers including a transfer unit to transfer a semiconductor substrate between the first to fourth process chambers and the load-lock chamber.

公开(公告)号：US20200091412A1

公开(公告)日：2020-03-19

申请号：US16352957

申请日：2019-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung LEE ,  Yong Sung PARK ,  Jeong-Heon PARK ,  Hyun CHO ,  Ung Hwan PI

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C14/00 ,  H01L21/67

Abstract: A magnetic memory device, a method for manufacturing a magnetic memory device, and a substrate treating apparatus, the device including a substrate including a first memory region and a second memory region; a first magnetic tunnel junction pattern on the first memory region, the first magnetic tunnel junction pattern including a first free pattern and a first oxide pattern on the first free pattern; and a second magnetic tunnel junction pattern on the second memory region, the second magnetic tunnel junction pattern including a second free pattern and a second oxide pattern on the second free pattern, wherein a ratio of a thickness of the first oxide pattern to a thickness of the first free pattern is different from a ratio of a thickness of the second oxide pattern to a thickness of the second free pattern.

公开(公告)号：US20170117455A1

公开(公告)日：2017-04-27

申请号：US14919717

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Woojin KIM ,  Joonmyoung LEE ,  Yong Sung PARK ,  Stuart S.P. PARKIN

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.

公开(公告)号：US20210079517A1

公开(公告)日：2021-03-18

申请号：US16856539

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Jeong-heon PARK ,  Junho JEONG

IPC: C23C14/54 ,  H01L27/22 ,  H01L43/12 ,  G11B5/851 ,  C23C14/00

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US20200152700A1

公开(公告)日：2020-05-14

申请号：US16434478

申请日：2019-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonmyoung LEE ,  Ung Hwan PI ,  Eunsun NOH ,  Yong Sung PARK

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.

公开(公告)号：US20170194555A1

公开(公告)日：2017-07-06

申请号：US15466802

申请日：2017-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Kwangseok KIM ,  Ki Woong KIM ,  Whankyun KIM ,  Sang Hwan PARK

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.