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    MAGNETIC MEMORY DEVICE AND ELECTRONIC DEVICE COMPRISING THE SAME
    2.
    发明公开
    MAGNETIC MEMORY DEVICE AND ELECTRONIC DEVICE COMPRISING THE SAME 审中-公开

    公开(公告)号：US20230371276A1

    公开(公告)日：2023-11-16

    申请号：US18156570

    申请日：2023-01-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Geon Hee Bae ,  Seung Pil Ko ,  Yoon Jong Song ,  Kil Ho Lee

    IPC: H10B61/00

    CPC classification number: H10B61/00 ,  G11C11/1673

    Abstract: A magnetic memory device includes first and second upper insulating layers and a first mold layer sequentially stacked on a first substrate region; a first primary and first secondary wiring structure spaced apart in a first direction in the first upper insulating layer; a second wiring structure on the first primary wiring structure and a reference wiring structure on the first secondary wiring structure, in the second upper insulating layer; a first structure on the second wiring structure; a second structure on the reference wiring structure; a lower electrode contact between the second wiring structure and the first structure, and not between the reference wiring structure and the second structure, in the first mold layer; a bit line structure on the first structure; and a reference bit line structure on the second structure. The first and second structure include a lower electrode, MTJ structure, intermediate electrode, and upper electrode.

    Semiconductor memory device comprising magnetic tunnel junctions
    4.
    发明授权
    Semiconductor memory device comprising magnetic tunnel junctions 有权

    公开(公告)号：US12213322B2

    公开(公告)日：2025-01-28

    申请号：US17380331

    申请日：2021-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Hwan Lee ,  Kwang Seok Kim ,  Yong Seok Kim ,  Il Gweon Kim ,  Kil Ho Lee

    IPC: H10B61/00 ,  G11C11/16

    Abstract: A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.

    NONVOLATILE MEMORY DEVICES HAVING MAGNETIC TUNNEL JUNCTION MEMORY CELLS THEREIN
    7.
    发明申请
    NONVOLATILE MEMORY DEVICES HAVING MAGNETIC TUNNEL JUNCTION MEMORY CELLS THEREIN 有权

    公开(公告)号：US20220246837A1

    公开(公告)日：2022-08-04

    申请号：US17486034

    申请日：2021-09-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kil Ho Lee ,  Gwan Hyeob Koh ,  Yong Jae Kim ,  Geon Hee Bae

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

    Abstract: A magnetic memory device includes a substrate having a first mold insulating film on a first region thereof, and a first structure on the substrate. The first structure includes a lower electrode, a magnetic tunnel junction (MTJ) structure on the lower electrode, and an upper electrode on the MTJ structure. A capping film is provided, which extends on the first mold insulating film and sidewalls of the first structure. A first etching stop layer is provided on the first structure and the capping film. A second mold insulating film is provided, which at least partially fills a space between the capping film and the first etching stop layer. A first metal structure is provided, which extends through a portion of the first etching stop layer and a portion of the second mold insulating film, and is electrically coupled to the MTJ structure.

    SEMICONDUCTOR DEVICES INCLUDING SPIN-ORBIT TORQUE LINE AND CONTACT PLUG
    9.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING SPIN-ORBIT TORQUE LINE AND CONTACT PLUG 审中-公开

    公开(公告)号：US20200227626A1

    公开(公告)日：2020-07-16

    申请号：US16506391

    申请日：2019-07-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kil Ho Lee ,  Woo Jin KIM ,  Gwan Hyeob KOH

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

    Abstract: A semiconductor device includes first and second contact plugs in an insulating layer that is on a substrate, the first and second contact plugs spaced apart from each other. A spin-orbit torque (SOT) line on the insulating layer and overlapping the first and second contact plug is provided. A magnetic tunnel junction (MTJ) is on the SOT line. An upper electrode is on the MTJ. Each of the first and second contact plugs includes a recess region adjacent the SOT line. A sidewall of the recess region is substantially coplanar with a side surface of the SOT line and a side surface of the MTJ.

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