公开(公告)号：US20170125254A1

公开(公告)日：2017-05-04

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae PARK ,  Yongsun KO ,  Kyunghyun KIM ,  ChangSup MUN ,  Kijong PARK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US10361100B2

公开(公告)日：2019-07-23

申请号：US15368988

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: H01L21/67 ,  H01L21/02 ,  F26B5/04

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US10128120B2

公开(公告)日：2018-11-13

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae Park ,  Yongsun Ko ,  Kyunghyun Kim ,  ChangSup Mun ,  Kijong Park

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US20130145640A1

公开(公告)日：2013-06-13

申请号：US13707253

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: F26B5/04

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。

公开(公告)号：US20170084469A1

公开(公告)日：2017-03-23

申请号：US15368988

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US09534839B2

公开(公告)日：2017-01-03

申请号：US13707253

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyongseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: F26B5/04 ,  H01L21/67

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/6715

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室，设置在处理室中以支撑基板的基板支撑构件，被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口， 第二供应端口，其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口，其构造成将所述超临界流体从所述处理室排出到外部区域。