公开(公告)号：US08836142B2

公开(公告)日：2014-09-16

申请号：US13911569

申请日：2013-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeun-Sang Park ,  Byung-Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Kwangjin Moon ,  Sukchul Bang

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.

Abstract translation: 公开了半导体器件。 半导体器件可以包括具有彼此相对的第一表面和第二表面的半导体衬底和形成在第二表面的一部分处的衬垫沟槽，穿透半导体衬底并从衬底的底表面突出的通孔 沟。 掩埋焊盘可以设置在焊盘沟槽中并且可以围绕通孔。

公开(公告)号：US08710650B2

公开(公告)日：2014-04-29

申请号：US14047548

申请日：2013-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC: H01L23/34

CPC classification number: H01L23/5226 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.

Abstract translation: 提供了具有通过电极的半导体器件及其制造方法。 所述方法包括提供包括彼此面对的顶表面和底表面的基板，形成从基板的顶表面延伸到基板的底表面的孔和间隙，围绕孔的间隙并且比孔更浅，填充 所述孔具有绝缘材料，在所述绝缘材料的所述基板的顶表面上形成金属互连线，凹陷所述基板的底表面以暴露所述绝缘材料，去除所述绝缘材料以经由所述孔暴露所述金属互连线 用导电材料填充孔以形成连接到金属互连线的通孔，再次使基板的底表面露出以露出间隙，并在基板的底表面上形成下绝缘层。

公开(公告)号：US20140008815A1

公开(公告)日：2014-01-09

申请号：US13911569

申请日：2013-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeun-Sang Park ,  Byung-Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Kwangjin Moon ,  Sukchul Bang

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.

Abstract translation: 公开了半导体器件。 半导体器件可以包括具有彼此相对的第一表面和第二表面的半导体衬底和形成在第二表面的一部分处的衬垫沟槽，穿透半导体衬底并从衬底的底表面突出的通孔 沟。 掩埋焊盘可以设置在焊盘沟槽中并且可以围绕通孔。

公开(公告)号：US20130200526A1

公开(公告)日：2013-08-08

申请号：US13756833

申请日：2013-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin Moon ,  SuKyoung Kim ,  Kunsang Park ,  Byung Lyul Park ,  Sukchul Bang ,  Jin Ho An ,  Kyu-Ha Lee ,  Dosun Lee ,  Gilheyun Choi

IPC: H01L23/498

CPC classification number: H01L23/49827 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.

Abstract translation: 提供具有通孔的半导体器件及其制造方法。 所述方法可以包括形成至少部分地穿透基板的通孔，所述通孔具有设置在所述基板的顶表面上的入口，形成通孔绝缘层以保形地覆盖所述通孔的内表面，形成缓冲器 所述缓冲层由收缩性优于所述通孔绝缘层的材料形成，形成贯通电极以填充所述通孔，所述通孔设置在所述通孔绝缘层上， 与缓冲层一起凹陷基底的底表面以露出通孔。

公开(公告)号：US10109665B2

公开(公告)日：2018-10-23

申请号：US15630063

申请日：2017-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-Jin Lee ,  Kwangjin Moon ,  Seokho Kim ,  Sukchul Bang ,  Jin Ho An ,  Naein Lee

IPC: H01L27/146

Abstract: A semiconductor device includes a semiconductor substrate with first and second surfaces facing each other, an etch stop pattern in a trench formed in the first surface of the semiconductor substrate, a first insulating layer on the first surface of the semiconductor substrate, and a through via penetrating the semiconductor substrate and the first insulating layer. The etch stop pattern surrounds a portion of a lateral surface of the through via.

公开(公告)号：US08872351B2

公开(公告)日：2014-10-28

申请号：US13756833

申请日：2013-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin Moon ,  SuKyoung Kim ,  Kunsang Park ,  Byung Lyul Park ,  Sukchul Bang ,  Jin Ho An ,  Kyu-Ha Lee ,  Dosun Lee ,  Gilheyun Choi

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/04 ,  H01L23/12 ,  H01L23/498 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/49827 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.

Abstract translation: 提供具有通孔的半导体器件及其制造方法。 所述方法可以包括形成至少部分地穿透基板的通孔，所述通孔具有设置在所述基板的顶表面上的入口，形成通孔绝缘层以保形地覆盖所述通孔的内表面，形成缓冲器 所述缓冲层由收缩性优于所述通孔绝缘层的材料形成，形成贯通电极以填充所述通孔，所述通孔设置在所述通孔绝缘层上， 与缓冲层一起凹陷基底的底表面以露出通孔。

公开(公告)号：US20140035144A1

公开(公告)日：2014-02-06

申请号：US14047548

申请日：2013-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC: H01L23/522

CPC classification number: H01L23/5226 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.

Abstract translation: 提供了具有通过电极的半导体器件及其制造方法。 所述方法包括提供包括彼此面对的顶表面和底表面的基板，形成从基板的顶表面延伸到基板的底表面的孔和间隙，围绕孔的间隙并且比孔更浅，填充 所述孔具有绝缘材料，在所述绝缘材料的所述基板的顶表面上形成金属互连线，凹陷所述基板的底表面以暴露所述绝缘材料，去除所述绝缘材料以经由所述孔暴露所述金属互连线 用导电材料填充孔以形成连接到金属互连线的通孔，再次使基板的底表面露出以露出间隙，并在基板的底表面上形成下绝缘层。