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1.发明授权公开(公告)号：US07223305B2
公开(公告)日：2007-05-29
申请号：US10761147
申请日：2004-01-20
IPC分类号： C30B29/30
CPC分类号： H03H9/02574 , C30B19/00 , C30B29/30 , H03H3/08
摘要： A method of manufacturing a potassium niobate (KNbO3) single crystal thin film, includes the steps of maintaining the substrate under a predetermined oxygen partial pressure; maintaining the substrate within a temperature region which is equal to or higher than an eutectic temperature of KNbO3 and 3K2O.Nb2O5 and is equal to or lower than complete melting temperature of KNbO3 and 3K2O.Nb2O5 so that a solid phase of KNbO3 and a liquid phase can coexist on the substrate; depositing a vapor phase material on the substrate in a state in which a solid phase and a liquid phase coexist; and precipitating KNbO3 on the substrate from the liquid phase as a solid phase to grow a KNbO3 single crystal thin film. The composition of a starting material to be vaporized to generate the vapor phase material is from K2O.Nb2O5=50:50 to K2O.Nb2O5=65:35.
摘要翻译： 制备铌酸钾（KNbO 3）单晶薄膜的方法包括以下步骤：将衬底保持在预定的氧分压下; 将衬底保持在等于或高于KNbO 3和3K 2 N 2 O 2的共晶温度的温度区域内， 并且等于或低于KNbO 3和3K 2 O的完全熔融温度.Nb 2 O 2， 使得KNbO 3 3的固相和液相可以共存在基底上; 在固相和液相共存的状态下在基板上沉积气相材料; 并从液相中沉淀KNbO 3 N 3作为固相，以生长KNbO 3/3单晶薄膜。 待蒸发以产生气相材料的起始材料的组成为K 2 N 2 O 2 O 5 = 50:50 至K 2 N 2 N 2 O 5 = 65:35。
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公开(公告)号：US07033521B2
公开(公告)日：2006-04-25
申请号：US10396115
申请日：2003-03-25
IPC分类号： H01L41/187 , H01I41/04 , B41J2/045 , B32B15/00
CPC分类号： B41J2/14233 , B41J2202/03 , H01L41/0478 , H01L41/0973 , H01L41/1871 , H01L41/318 , H01L41/319 , Y10T428/12493 , Y10T428/12611
摘要： A piezoelectric actuator includes: a buffer layer that is composed of an oxide or a nitride epitaxially formed on a Si substrate; a bottom electrode formed on the buffer layer, being composed of a transition metal oxide, and having a pseudo-cubic (100) or (111) orientation with a perovskite structure; a piezoelectric layer formed on the bottom electrode being composed of (Ba1−xMx)(Ti1−yZy)O3 (where (M=Sr or Ca and 0≦x≦0.3) (Z=Zr or Hf and 0≦y≦0.2)) with a pseudo-cubic (001) or (111) orientation; and a top electrode that is formed on the piezoelectric layer. In this way, a piezoelectric actuator that uses barium titanate as the piezoelectric body and does not include Pb is provided.
摘要翻译： 压电致动器包括：由外延形成在Si衬底上的氧化物或氮化物构成的缓冲层; 形成在缓冲层上的底电极，由过渡金属氧化物构成，具有钙钛矿结构的假立方（100）或（111）取向; 形成在底部电极上的压电层由（Ba 1-x M x X）（Ti 1-y Z z） （其中（M = Sr或Ca，0 <= x <= 0.3）（Z = Zr或Hf，0 <= y <= 0.2））） （001）或（111）取向; 以及形成在压电层上的顶部电极。 以这种方式，提供了使用钛酸钡作为压电体并且不包括Pb的压电致动器。
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3.发明授权Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor 失效适用于电子电路和器件的表面声波元件及其制造方法公开(公告)号：US06995634B2
公开(公告)日：2006-02-07
申请号：US10753237
申请日：2004-01-07
CPC分类号： H03H9/0542 , H03H9/02574 , H03H9/02984
摘要： A surface-acoustic-wave component that comprises a first piezoelectric layer composed of zinc oxide (ZnO), a second piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes (e.g., interdigital transducers) are further formed. Alternatively, it comprises a conductive layer composed of zinc oxide (ZnO), a piezoelectric layer composed of lithium niobate (LiNbO3), and a protective layer, which are sequentially formed on a silicon substrate, on which electrodes are further formed. The piezoelectric layer can actualize preferable orientation so as to improve the electromechanical coupling coefficient (K2). Thus, it is possible to produce surface-acoustic-wave components that contribute to manufacturing of highly-integrated electronic circuits such as frequency filters and oscillators as well as electronic devices such as portable telephones.
摘要翻译： 一种表面声波分量，包括由氧化锌（ZnO）构成的第一压电层，由铌酸锂（LiNbO 3 N）组成的第二压电层和保护层，所述表面声波分量依次形成 在硅衬底上，在其上进一步形成电极（例如，叉指式换能器）。 或者，其包括由氧化锌（ZnO）构成的导电层，由铌酸锂（LiNbO 3 N）构成的压电层和保护层，其依次形成在硅基板上， 进一步形成电极。 压电层可以实现优选的取向，从而提高机电耦合系数（K 2 O 2）。 因此，可以产生有助于制造诸如频率滤波器和振荡器的高度集成的电子电路以及诸如便携式电话的电子设备的表面声波分量。
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公开(公告)号：US20050128681A1
公开(公告)日：2005-06-16
申请号：US11004591
申请日：2004-12-03
IPC分类号： H01L27/04 , H01G4/06 , H01L21/02 , H01L21/822
CPC分类号： H01L28/55
摘要： A capacitor is provided having a structure in which an insulation film is interposed between a first electrode and a second electrode. The insulation film includes SrTiO3 as a main component, and at least one of Si and Ge added thereto.
摘要翻译： 提供一种电容器，其具有绝缘膜插入在第一电极和第二电极之间的结构。 绝缘膜包括SrTiO 3 3主要成分，并添加至少一种Si和Ge。
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公开(公告)号：US20050096230A1
公开(公告)日：2005-05-05
申请号：US11008761
申请日：2004-12-08
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01G2/00
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.
摘要翻译： 通过在无机非晶层或有机固体层上沿期望的方向外延生长钙钛矿型氧化物薄膜，高度改善电子器件的性能; 此外，通过将电子器件结合到集成电路中提供高性能电子器件，其中在无机非晶层或有机固体层上形成氧化物薄层，并且钙钛矿型氧化物薄膜外延生长在 氧化物薄层可以是氧化锶，氧化镁，氧化铈，氧化锆，钇稳定的氧化锆和钛酸锶中的至少一种; 作为钙钛矿型氧化物薄膜，例如使用作为压电体或铁电体材料的钙钛矿型氧化物薄膜。
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公开(公告)号：US06849861B2
公开(公告)日：2005-02-01
申请号：US10108180
申请日：2002-03-27
IPC分类号： H01L41/08 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L41/09 , H01L41/18 , H01L41/187 , H03H9/02 , H03H9/17 , H03H9/25 , H01L29/06
CPC分类号： H01L21/02197 , H01L21/02164 , H01L21/02172 , H01L21/02189 , H01L21/02192 , H01L21/31691 , H01L28/56 , H03H9/02574 , H03H9/174 , Y10S257/918
摘要： Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by incorporating the electronic device into an integrated circuit, wherein oxide thin layers are formed on the inorganic amorphous layer or the organic solid layer, and the perovskite-type oxide thin film is grown epitaxially on the oxide layer, the oxide thin layers being able to be at least one of strontium oxide, magnesium oxide, cerium oxide, zirconium oxide, yttrium stabilized zirconium oxide, and strontium titanate; and as the perovskite-type oxide thin film, the perovskite-type oxide thin film being a piezoelectric or ferroelectric material, for example, is used.
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公开(公告)号：US06737690B2
公开(公告)日：2004-05-18
申请号：US10105042
申请日：2002-03-22
IPC分类号： H01C31119
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/31604 , H01L27/105 , H01L27/11507 , H01L27/11509 , H01L28/55 , H01L28/60 , Y10S257/906
摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.
摘要翻译： 本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。 如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。 也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。
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8.发明授权Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus 失效具有KNb03压电薄膜，频率滤波器，振荡器，电子电路和电子设备的表面声波器件公开(公告)号：US06720846B2
公开(公告)日：2004-04-13
申请号：US10102181
申请日：2002-03-20
IPC分类号： H03H964
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/0542
摘要： Surface acoustic wave device having a high k2, and a frequency filter, oscillator, electronic circuit and electronic device employing this surface acoustic wave device is provided, wherein a first oxide thin film layer comprising SrO or MgO and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (110) Si substrate, or a first oxide thin film layer comprising CeO2, ZrO2 or yttrium-stabilized zirconia and a second oxide thin film layer comprising SrTiO3 are sequentially formed on top of a (100) Si substrate, a KNbO3 piezoelectric thin film being then formed on top of either of these second oxide thin film layers, and then, a protective film comprising oxide or nitride is formed on top of the KNbO3 piezoelectric thin film, finally, at least one electrode is formed on top of this protective film, to form a surface acoustic wave device, which surface acoustic wave device is employed to form a frequency filter, oscillator, electronic circuit, or electronic device.
摘要翻译： 提供具有高k <2的表面声波器件，以及使用该声表面波器件的频率滤波器，振荡器，电子电路和电子器件，其中包括SrO或MgO的第一氧化物薄膜层和第二氧化物薄膜 在（110）Si衬底的顶部依次形成包含SrTiO 3的层，或者包括CeO 2，ZrO 2或钇稳定的氧化锆的第一氧化物薄膜层和包含SrTiO 3的第二氧化物薄膜层依次形成在（100） ）Si衬底，然后在这些第二氧化物薄膜层之一上形成KNbO3压电薄膜，然后在KNbO3压电薄膜的顶部形成包含氧化物或氮化物的保护膜，最后至少一个 电极形成在该保护膜的顶部上，形成表面声波装置，该声表面波装置用于形成频率滤波器，振荡器，电子电路或电子 设备。
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9.发明授权Ferroelectric memory having a BaTiO3 recording layer oriented in a <111> direction 有权具有沿<111>方向取向的BaTiO 3记录层的铁电存储器公开(公告)号：US06510074B2
公开(公告)日：2003-01-21
申请号：US10103681
申请日：2002-03-21
IPC分类号： G11C1122
CPC分类号： H01L27/105 , H01L27/11502
摘要： A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO3 is fabricated so as to be oriented in a pseudo-cubic system direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO3 film is elongated more than 2% in the pseudo-cubic system direction compared with the unit cell in a bulk material of BaTiO3, wherein in order to produce lattice strain in the crystal structure of the recording layer, the recording layer is grown epitaxially on the electrode layer that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.
摘要翻译： 具有这种铁电存储元件的铁电存储元件和电子设备设置有具有高极化矩和高居里温度的小于50nm薄膜厚度的薄膜记录层，其中制造BaTiO 3的记录层，以便 为了在三角晶体结构中以拟立方体方向<111>方向取向，为了增加极化力矩和居里温度，BaTiO 3膜中的晶胞在假立方体系中延伸超过2％ 111>方向与BaTiO 3的块状材料中的单元电池相比，其中为了在记录层的晶体结构中产生晶格应变，在作为基极层的电极层上外延生长记录层，铁电体 存储元件设置有记录层，并且电子设备设置有铁电存储元件。
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公开(公告)号：US07310862B2
公开(公告)日：2007-12-25
申请号：US11000517
申请日：2004-11-30
IPC分类号： H01L41/22
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1634 , B41J2/1642 , B41J2/1645 , B41J2/1646 , C23C14/08 , C23C14/28 , H01L41/1876 , H01L41/316 , Y10T29/42 , Y10T29/435 , Y10T29/49005 , Y10T29/49007
摘要： A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.
摘要翻译： 提供了一种有效地制造具有在期望方向上排列的晶体取向的压电薄膜的压电装置的方法。 在衬底的表面上形成部分地具有通过离子束辅助激光烧蚀法形成的层的中间层，同时控制伴随着冷却装置的离子束照射并且作为整体的双轴取向的温度升高。 在中间层上形成下电极。 在下电极上形成压电薄膜。 在压电膜上形成上电极。 下电极和压电膜通过外延生长形成。
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