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75 条记录 (耗时 0.026 秒)

    Ferroelectronic memory and electronic apparatus
    1.
    发明授权
    Ferroelectronic memory and electronic apparatus 失效
    铁电记忆体和电子仪器

    公开(公告)号：US06737690B2

    公开(公告)日：2004-05-18

    申请号：US10105042

    申请日：2002-03-22

    申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    IPC分类号： H01C31119

    CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/31604 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/60 ,  Y10S257/906

    摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has an excellent degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved. A ferroelectric memory having both integration and memory characteristics in which the angularity of the ferroelectric layer's hysteresis curve is improved is realized as follows. Namely, a structure is employed in which the memory cell array and the peripheral circuit are in a plane separated from one another, and the ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer and the first signal electrodes.

    摘要翻译： 本发明涉及具有优异的集成度的矩阵型存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度。 如下实现具有集成和存储特性的强电介质存储器，其中铁电层的磁滞曲线的角度得到改善。 也就是说，采用其中存储单元阵列和外围电路处于彼此分离的平面中的结构，并且使铁电层经由缓冲器和第一信号电极经历外延生长到Si单晶。

    Ferroelectric memory and electronic apparatus
    2.
    发明授权
    Ferroelectric memory and electronic apparatus 失效
    铁电存储器和电子设备

    公开(公告)号：US06930339B2

    公开(公告)日：2005-08-16

    申请号：US10105002

    申请日：2002-03-22

    申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa ,  Kazumasa Hasegawa ,  Eiji Natori

    IPC分类号： G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L31/119

    CPC分类号： H01L27/105

    摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has a superior degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved, the production yield is increased and costs are reduced.A ferroelectric memory having improved angularity in the hysteresis curve, and superior memory characteristics, production yield and costs is realized as follows. Namely, a peripheral circuit chip and a memory cell array chip are engaged onto an inexpensive assembly base 300 such as glass or plastic. In memory cell array chip 200, a ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer layer and first signal electrode. As a result, a ferroelectric memory can be realized which has improved angularity in the hysteresis curve and superior memory characteristics, production yield, and cost.

    摘要翻译： 本发明涉及一种具有优异的集成度的矩阵式存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度，提高了生产成本并降低了成本。 具有改善的滞后曲线的角度，优异的存储特性，生产成本和成本的铁电存储器实现如下。 也就是说，外围电路芯片和存储单元阵列芯片被接合到诸如玻璃或塑料的便宜的组装基座300上。 在存储单元阵列芯片200中，使铁电体层通过缓冲层和第一信号电极进行Si单晶的外延生长。 结果，可以实现具有改善的滞后曲线的角度和优异的记忆特性，产量和成本的铁电存储器。

    Ferroelectric memory device
    6.
    发明授权
    Ferroelectric memory device 有权
    铁电存储器件

    公开(公告)号：US06690599B2

    公开(公告)日：2004-02-10

    申请号：US10026892

    申请日：2001-12-27

    申请人： Kazumasa Hasegawa ,  Eiji Natori ,  Hiromu Miyazawa ,  Junichi Karasawa

    发明人： Kazumasa Hasegawa ,  Eiji Natori ,  Hiromu Miyazawa ,  Junichi Karasawa

    IPC分类号： G11C1122

    CPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/101 ,  H01L27/11507 ,  H01L28/55

    摘要： A ferroelectric memory device includes a simple matrix type memory cell array. Provided that the maximum absolute value of a voltage applied between a first signal electrode and a second signal electrode is Vs, polarization P of a ferroelectric capacitor formed of the first signal electrode, the second signal electrode, and ferroelectric layer is within the range of 0.1P(+Vs) P(+⅓Vs) when the applied voltage is changed from −Vs to +⅓Vs.

    摘要翻译： 铁电存储器件包括简单矩阵型存储单元阵列。 假设在第一信号电极和第二信号电极之间施加的电压的最大绝对值为Vs，由第一信号电极，第二信号电极和铁电层形成的铁电电容器的极化P为0.1 当施加的电压从+ Vs变化到-1 / 3Vs时，P（+ Vs） P（+ 1 / 3Vs） -Vs至+ 1 / 3Vs。

    Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions
    7.
    发明授权
    Method of operating a high temperature superconductive device comprising superconductive source, drain, and channel regions 失效
    操作包括超导源极，漏极和沟道区的高温超导器件的方法

    公开(公告)号：US5804835A

    公开(公告)日：1998-09-08

    申请号：US463322

    申请日：1995-06-05

    申请人： Taketomi Kamikawa ,  Eiji Natori ,  Setsuya Iwashita ,  Tatsuya Shimoda

    发明人： Taketomi Kamikawa ,  Eiji Natori ,  Setsuya Iwashita ,  Tatsuya Shimoda

    IPC分类号： H01L39/14 ,  H01L39/16 ,  H01L39/22 ,  H01L29/12

    CPC分类号： H01L39/146 ,  H01L39/16

    摘要： This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive electrodes, wherein there are 2-terminal or 3-terminal superconductive devices that use a junction that is in a superconductive state that is weaker than the first and the second superconductive electrodes or in a normal conductive state that is near the superconductive state. The differences between the critical current, the critical temperature, the pair potential and the carrier densities of the first and the second superconductive electrodes and the junction are used as a means of putting the junction in the states mentioned above. Based on the methods mentioned above, a superconductive device which has few pattern rule restrictions and which is easy to fabricate can be offered. And in the case of the 3-terminal superconductive device, the switching characteristics can be improved.

    摘要翻译： 这是一种超导装置的发明，该超导装置配备有第一超导电极，第二超导电极和由连接这些超导电极的超导材料制成的结，其中存在2端或3端超导装置，其中 使用处于比第一和第二超导电极弱的超导状态的接合处或接近超导状态的正常导电状态。 使用第一和第二超导电极和结的临界电流，临界温度，对电势和载流子密度之间的差异作为将结点置于上述状态的手段。 基于上述方法，可以提供具有很少图案规则限制并且易于制造的超导装置。 并且在3端子超导装置的情况下，可以提高开关特性。