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公开(公告)号：US20240266469A1
公开(公告)日：2024-08-08
申请号：US18629555
申请日：2024-04-08
发明人： Petar Atanackovic
IPC分类号： H01L33/26 , H01L21/02 , H01L23/66 , H01L27/15 , H01L29/15 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/778 , H01L29/786 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34
CPC分类号： H01L33/26 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02458 , H01L21/02507 , H01L23/66 , H01L27/15 , H01L29/151 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/517 , H01L29/66462 , H01L29/7869 , H01L33/002 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34 , H01L29/778 , H01L29/7786 , H01L2223/6627
摘要： The techniques described herein relate to a transistor including a substrate including sapphire, an epitaxial channel layer on the substrate, and an epitaxial gate layer on the channel layer. The epitaxial channel layer can include α-Ga2O3, with a first bandgap. The epitaxial gate layer can include an oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts, including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the epitaxial gate layer.
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公开(公告)号：US20240258460A1
公开(公告)日：2024-08-01
申请号：US18629606
申请日：2024-04-08
发明人： Petar Atanackovic
IPC分类号： H01L33/26 , H01L21/02 , H01L23/66 , H01L27/15 , H01L29/15 , H01L29/20 , H01L29/24 , H01L29/267 , H01L29/51 , H01L29/66 , H01L29/778 , H01L29/786 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34
CPC分类号： H01L33/26 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02458 , H01L21/02507 , H01L23/66 , H01L27/15 , H01L29/151 , H01L29/2003 , H01L29/24 , H01L29/267 , H01L29/517 , H01L29/66462 , H01L29/7869 , H01L33/002 , H01L33/007 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/62 , H01S5/34 , H01L29/778 , H01L29/7786 , H01L2223/6627
摘要： The techniques described herein relate to a transistor, including a substrate, an epitaxial buffer layer, an epitaxial channel layer, and a gate layer. The substrate includes a first oxide material with a first crystal symmetry, the epitaxial buffer layer includes a second oxide material with a second crystal symmetry, the epitaxial channel layer includes a third oxide material with a third crystal symmetry and a first bandgap, and the gate layer includes a fourth oxide material with a second bandgap. The first crystal symmetry is different from either the second crystal symmetry or the third crystal symmetry, and the second bandgap is wider than the first bandgap. The transistor also includes electrical contacts including a source electrical contact coupled to the epitaxial channel layer, a drain electrical contact coupled to the epitaxial channel layer, and a gate electrical contact coupled to the gate layer.
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公开(公告)号：US20240096970A1
公开(公告)日：2024-03-21
申请号：US18497137
申请日：2023-10-30
发明人： Petar Atanackovic
IPC分类号： H01L29/24 , C30B29/32 , H01L21/02 , H01L21/225 , H01L31/032 , H01L33/00 , H01L33/26
CPC分类号： H01L29/24 , C30B29/32 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/2252 , H01L31/032 , H01L33/0029 , H01L33/26
摘要： Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices. Also disclosed is single crystal MgxGe1-xO2-x, with x having a value of 0≤x
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公开(公告)号：US11855152B2
公开(公告)日：2023-12-26
申请号：US17651711
申请日：2022-02-18
发明人： Petar Atanackovic
IPC分类号： H01L33/26 , H01L29/24 , H01L31/032 , H01L21/02 , C30B29/32 , H01L21/225 , H01L33/00
CPC分类号： H01L29/24 , C30B29/32 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/2252 , H01L31/032 , H01L33/0029 , H01L33/26
摘要： Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.
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公开(公告)号：US11695096B2
公开(公告)日：2023-07-04
申请号：US17653832
申请日：2022-03-07
发明人： Petar Atanackovic
CPC分类号： H01L33/26 , H01L33/002 , H01L33/005 , H01L33/40 , H01S5/183 , H01S5/34
摘要： In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.
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公开(公告)号：US20230147475A1
公开(公告)日：2023-05-11
申请号：US17653832
申请日：2022-03-07
发明人： Petar Atanackovic
CPC分类号： H01L33/26 , H01L33/002 , H01L33/40 , H01L33/005 , H01S5/34
摘要： In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.
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公开(公告)号：US20230146938A1
公开(公告)日：2023-05-11
申请号：US17651711
申请日：2022-02-18
发明人： Petar Atanackovic
IPC分类号： H01L33/00 , H01L21/225 , C30B29/32
CPC分类号： H01L33/0029 , H01L21/2252 , C30B29/32
摘要： Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.
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公开(公告)号：US20230143766A1
公开(公告)日：2023-05-11
申请号：US17652019
申请日：2022-02-22
发明人： Petar Atanackovic
CPC分类号： H01L29/24 , H01L29/151 , H01S5/34 , H01L33/26
摘要： The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, including: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1-x1-y1)(Alq1Ga1-q1)2O4 wherein 0≤x1≤1, 0≤y1≤1 and 0≤q1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1-x2-y2)(Alq2Ga1-q2)2O4 wherein 0≤x2≤1, 0≤y2≤1 and 0≤q2≤1. In some cases, at least one condition selected from x1≠x2, y1≠y2, and q1≠q2 is satisfied.
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公开(公告)号：US11563144B2
公开(公告)日：2023-01-24
申请号：US17446926
申请日：2021-09-03
发明人： Petar Atanackovic , Matthew Godfrey
IPC分类号： H01L33/06 , H01L33/00 , H01L33/16 , H01L21/02 , H01L27/15 , H01L33/14 , H01L33/32 , H01L33/10 , H01L33/18
摘要： Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.
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公开(公告)号：US11502223B1
公开(公告)日：2022-11-15
申请号：US17653824
申请日：2022-03-07
发明人： Petar Atanackovic
摘要： A semiconductor structure can include a substrate comprising a first in-plane lattice constant, a graded layer on the substrate, and a first region of the graded layer comprising a first epitaxial oxide material comprising a second in-plane lattice constant. The graded layer on the substrate can include (Alx1Ga1−x1)y1Oz1, wherein x1 is from 0 to 1, wherein y1 is from 1 to 3, wherein z1 is from 2 to 4, and wherein x1 varies in a growth direction such that the graded layer has the first in-plane lattice constant adjacent to the substrate and a second in-plane lattice constant at a surface of the graded layer opposite the substrate. In some cases, a semiconductor structure includes a first region comprising a first epitaxial oxide material; a second region comprising a second epitaxial oxide material; and the graded region located between the first and the second regions.
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