Bump bond structure for enhanced electromigration performance

    公开(公告)号:US11450638B2

    公开(公告)日:2022-09-20

    申请号:US17009648

    申请日:2020-09-01

    Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

    Bump bond structure for enhanced electromigration performance

    公开(公告)号:US10763231B2

    公开(公告)日:2020-09-01

    申请号:US16047888

    申请日:2018-07-27

    Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

    PRE-PLATED LEAD TIP FOR WETTABLE FLANK LEADFRAME

    公开(公告)号:US20240055327A1

    公开(公告)日:2024-02-15

    申请号:US17818395

    申请日:2022-08-09

    CPC classification number: H01L23/4951 H01L23/49555 H01L21/4842

    Abstract: A method for making a semiconductor device is provided. The method generally includes forming a package having a first plurality of leads extending from a first side of the package, the package disposed on a leadframe. The method generally includes making a first cut adjacent to a first side of a first lead of the first plurality of leads, the first side extending from the first side of the package. The method generally includes making a second cut adjacent to a second side of the first lead of the first plurality of the lead, the second side of the lead opposite the first side of the lead and extending from the first side of the package.

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