公开(公告)号：US10692835B2

公开(公告)日：2020-06-23

申请号：US16171121

申请日：2018-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Han Zhong ,  Zi Qi Wang ,  Chen Xiong ,  Yong Qiang Tang ,  Xi Lin Li ,  Xiao Lin Kang

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

公开(公告)号：US20230275060A1

公开(公告)日：2023-08-31

申请号：US17682194

申请日：2022-02-28

Applicant: Texas Instruments Incorporated

Inventor： Xiaoling Kang ,  Xi Lin Li ,  Zi Qi Wang ,  Huo Yun Duan ,  Xiao Lin Kang

IPC: H01L23/00

CPC classification number: H01L24/48 ,  H01L24/85 ,  H01L2224/48175 ,  H01L2224/48479 ,  H01L2224/48464 ,  H01L2224/85186 ,  H01L2224/85051 ,  H01L24/49 ,  H01L2224/49113 ,  H01L24/73 ,  H01L2224/73265 ,  H01L24/32 ,  H01L2224/32245 ,  H01L23/49555

Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.

公开(公告)号：US20240258215A1

公开(公告)日：2024-08-01

申请号：US18162079

申请日：2023-01-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mei Jiao ,  Huo Yun Duan ,  Zi Qi Wang ,  Tiange Xie

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/181

Abstract: An example apparatus includes: a metal leadframe including a die pad in a central portion and leads spaced from the die pad. The leads include: an interior end spaced from the die pad and having a full thickness of the metal leadframe; a central portion connected to the interior end and extending away from the die pad having a partial thickness less than the full thickness; and an exterior end having the full thickness extending from the central portion. A semiconductor die is mounted to the die pad by die attach material. Wire bonds couple bond pads of the semiconductor die to the interior ends of the leads. Mold compound covers the semiconductor die, the die pad, the wire bonds, the interior ends of the leads, the central portion of the leads, and portions of the exterior ends of the leads to form a semiconductor device package.

公开(公告)号：US20190378814A1

公开(公告)日：2019-12-12

申请号：US16171121

申请日：2018-10-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Han Zhong ,  Zi Qi Wang ,  Chen Xiong ,  Yong Qiang Tang ,  Xi Lin Li ,  Xiao Lin Kang

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A method for forming a ball bond for an integrated circuit formed on a semiconductor die includes forming a ball at a first send of a conductive wire inserted in a capillary tool and lowering the capillary tool toward a pad on the semiconductor die positioned on a support surface. The method further includes moving, using a motor, the support surface relative to the capillary tool to thereby bond the ball, without using ultrasound, to the pad and then raising the capillary tool.

公开(公告)号：US20240250060A1

公开(公告)日：2024-07-25

申请号：US18158982

申请日：2023-01-24

Applicant: Texas Instruments Incorporated

Inventor： Ye Zhuang ,  Huo Yun Duan ,  Zi Qi Wang ,  Xiao Lin Kang ,  Xiaoling Kang ,  Tingting Yu

IPC: H01L23/00

CPC classification number: H01L24/78 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/78304 ,  H01L2224/85181 ,  H01L2224/85947 ,  H01L2924/13091

Abstract: An example semiconductor package comprises a semiconductor die having a top surface, a bond pad formed on the top surface, a bond wire having a first end and a second end, wherein the first end is attached to the bond pad. The semiconductor package having a contact pad, wherein the second end of the wire bond is attached to the contact pad by a stitch bond, the stitch bond having a plateau region formed between a cut end and a ramped portion, wherein a bottom surface of the plateau region forms an attachment to the contact pad.

公开(公告)号：US10340246B1

公开(公告)日：2019-07-02

申请号：US15980948

申请日：2018-05-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Han Zhong ,  Yong Qiang Tang ,  Chen Xiong ,  Zi Qi Wang ,  Xi Lin Li

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/495 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/48 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49582 ,  H01L23/562 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45565 ,  H01L2224/45647 ,  H01L2224/45664 ,  H01L2224/48245 ,  H01L2224/48465 ,  H01L2224/48724 ,  H01L2224/48769 ,  H01L2924/35121

Abstract: A method of interconnecting components of a semiconductor device using wire bonding is presented. The method includes creating a free air ball at a first end of an aluminum wire that has a coating surrounding the aluminum wire, wherein the coating comprises palladium, and wherein the free air ball is substantially free of the coating. The method further includes the step of bonding the free air ball to a bond pad on a semiconductor chip, the bond pad having an aluminum surface layer, wherein the resultant ball bond and the bond pad form a substantially homogenous, aluminum-to-aluminum bond. The method may further include bonding a second, opposing end of the coated-aluminum wire to a bond site separate from the semiconductor chip, the bond site having a palladium surface layer, wherein the second end of the coated-aluminum wire and the bond site form a substantially homogenous, palladium-to-palladium bond.